Huey-Jiuan Lin

Dielectric Properties and Leakage Current Characterization of the Ba(SnxTi1-x)O3 Thin Films Prepared by Radio Frequency Magnetron Sputtering

Ba(SnxTi1-x)O3 (BSxT1-x, 0≤x≤0.15) thin films deposited by rf magnetron sputtering with platinum (Pt) top and silver (Ag) bottom electrodes have been characterized with respect to the dielectric properties and leakage current density as a function of composition and rf power. BSxT1-x thin films are amorphous when deposited at rf powers of 100 and 125 W, 5×10-3 Torr working pressure, an O2/(O2+Ar) ratio of 1/(1+9) and room temperature. The XRD result shows the presence of a single perovskite phase of BaTiO3, operated at a range of rf power increasing from 125 to 175 W. The maximum capacitance of Pt/BSxT1-x/Si/Ag capacitors increases with increasing Sn content. The ferroelectric characteristics of the capacitance–voltage hystersis loop in the BSxT1-x thin films are observed. The leakage current density of the Pt/BS0.15T0.85/Si/Ag capacitors at 100 kV/cm varies from mid 10-6 to about 10-8 A/cm2 with the rf power decreasing from 175 to 125 W. The dominant conduction mechanism of the BS0.15T0.85 thin films has shown to be related to Schottky emission (SE) and Poole–Frenkel (PF) mechanisms. The remnant polarization (Pr) and coercive electric field (Ec) of the above device appear to decrease with increasing Sn content.