Hui-Won Yang
Samsung
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Publication
Featured researches published by Hui-Won Yang.
IEEE Electron Device Letters | 2011
Roman Kondratyuk; Ki-Ju Im; Denis Stryakhilev; Chaun Gi Choi; Mu-gyeom Kim; Hui-Won Yang; Hye-Hyang Park; Yeon Gon Mo; Hye Dong Kim; Sang Soo Kim
We extracted the effective channel length and parasitic series resistance in a-IGZO inverted-staggered etch-stop (ES) TFTs. When there is an overlap between the drain or source electrode and the FET channel, the resistance of the channel underneath the overlapping regions is very low compared with other channel region resistance. As a result, the effective channel length is smaller than the physical length. The aforementioned definition of effective channel length in terms of device geometric parameters seems to be specific for ES a-IGZO TFTs.
Archive | 2009
Min-Kyu Kim; Jong-Han Jeong; Tae-kyung Ahn; Jae-Kyeong Jeong; Yeon-Gon Mo; Jin-Seong Park; Hyun-Joong Chung; Kwang-Suk Kim; Hui-Won Yang
Archive | 2009
Jong-Han Jeong; Jae-Kyeong Jeong; Yeon-Gon Mo; Hui-Won Yang
Archive | 2010
Dong-Wook Park; Ki-Ju Im; Ki-Wook Kim; Yeon-Gon Mo; Hui-Won Yang
Archive | 2008
Jong-Han Jeong; Jae-Kyeong Jeong; Jin-Seong Park; Yeon-Gon Mo; Hui-Won Yang; Min-Kyu Kim; Tae-kyung Ahn; Hyun-Soo Shin; Hun Jung Lee
Archive | 2011
Jae-Heung Ha; Young-woo Song; Jong-hyuk Lee; Jong-Han Jeong; Min-Kyu Kim; Yeon-Gon Mo; Jae-Kyeong Jeong; Hyun-Joong Chung; Kwang-Suk Kim; Hui-Won Yang; Chaun-gi Choi
Archive | 2012
Hui-Won Yang; Eun-Hyun Kim
Archive | 2008
Ki-Ju Im; Byong-Deog Choi; Won-Sik Kim; Hye-Hyang Park; Hui-Won Yang; Yun-Gyu Lee
Archive | 2012
Min-Kyu Kim; Tae-kyung Ahn; Jin-Seong Park; Hyun-Soo Shin; Yeon-Gon Mo; Jong-Han Jeong; Hui-Won Yang; Jae-Kyeong Jeong; Hun-Jung Lee
Archive | 2015
Hui-Won Yang; Chaun-gi Choi
