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Dive into the research topics where Hui-Youn Shin is active.

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Featured researches published by Hui-Youn Shin.


Nanotechnology | 2012

Low-temperature growth and direct transfer of graphene–graphitic carbon films on flexible plastic substrates

Yong-Jin Kim; Sang Jin Kim; Myung Hee Jung; Kwang Yeol Choi; Sukang Bae; Seoung-Ki Lee; Youngbin Lee; Dolly Shin; Bora Lee; Hui-Youn Shin; Myungshin Choi; Kyu Ho Park; Jong-Hyun Ahn; Byung Hee Hong

We demonstrate low-temperature growth and direct transfer of graphene-graphitic carbon films (G-GC) onto plastic substrates without the use of supporting materials. In this approach, G-GC films were synthesized on copper layers by using inductively coupled plasma enhanced chemical vapor deposition, enabling the growth of few-layer graphene (G) on top of Cu and the additional growth of graphitic carbon (GC) films above the graphene layer at temperatures as low as 300 °C. The patterned G-GC films are not easily damaged or detached from the polymer substrates during the wet etching and transfer process because of the van der Waals forces and π-π interactions between the films and the substrates. Raman spectroscopy reveals the two-dimensional hexagonal lattice of carbon atoms and the crystallinity of the G-GC films. The optical transparency and sheet resistance of the G-GC films are controlled by modulating the film thickness. Strain sensors are successfully fabricated on plastic substrates, and their resistance modulation at different strains is investigated.


Journal of Materials Science: Materials in Electronics | 2014

Structural characterization of CdSe/ZnS core–shell quantum dots (QDs) using TEM/STEM observation

Hui-Youn Shin; Dongseon Jang; Jaesung Hwang; Youngil Jang; M. J. Cho; Kyu Ho Park

CdSe/ZnS core–shell structured nano-crystal quantum dots (QDs) are ideal candidates for light-emission applications due to their high quantum efficiency, narrow-band, and particle-size-tunable photoluminescence. In particular, their small size results in the quantum confinement of semiconductor nano-crystals, which widens their energy gaps. In general, structural analyses of QDs using a transmission electron microscope (TEM) are very important due to the significantly small size of QDs. We were able to obtain structural information of CdSe/ZnS core–shell QDs using nano-beam diffraction by controlling the nano-probe of the dark field scanning TEM (DF-STEM) mode and strain analysis with high-resolution TEM (HRTEM)/STEM images. Furthermore, we could clearly distinguish the interface between the CdSe core and the ZnS shell from the strain analysis with the HRTEM/STEM images.


SID Symposium Digest of Technical Papers | 1998

LP‐G: Late‐News Poster: Hybrid Switching Mode for Wide‐Viewing‐Angle TFT‐LCDs

Hui-Youn Shin; H.‐C. Lee; J.‐J. Park; S.‐B. Kwon

This paper reports on a hybrid switching(HS) mode for achieving wide viewing angle TFT-LCDs. In the newly developed HS mode, pixel electrodes are designed to apply electric field both in the vertical and horizontal direction, which is effective for high display performance as well as wide viewing angle. We have developed high performance 14.1 inch TFT-LCD monitor using HS method.


Japanese Journal of Applied Physics | 2014

Effect of oxygen incorporation in a-plane GaN on p-type ohmic contact property

Ki-Chang Jung; Inwoo Lee; Jaehyoung Park; Hyojung Bae; Chung Yi Kim; Hui-Youn Shin; Hyunggu Kim; Jina Jeon; Sun Young Jung; Yoonho Choi; Jung-Soo Lee; Jun-Seok Ha

We report on the origin of the non-ohmic behavior of Ni/Au-based p-type contacts on a nonpolar a-plane GaN layer. The contact properties of Ga-polar c-plane GaN and nonpolar a-plane GaN are compared. While the Ga-polar c-plane shows ohmic-contact properties in the Ni/Au contact after heat treatment, the nonpolar a-plane shows rectifying characteristics both before and after heat treatment. We determined the reasons why the two planes show substantial differences in contact properties using various tools. We conclude that the differences originated from the oxygen incorporation preference resulting in gallium oxide formation at the interface of nonpolar a-plane GaN.


Journal of Crystal Growth | 2009

Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate

Hui-Youn Shin; S.K. Kwon; Y. I. Chang; M. J. Cho; Kyu Ho Park


Journal of the Korean Physical Society | 2013

Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire

Hui-Youn Shin; Kisung Jeon; Youngil Jang; Mingu Gang; Myungshin Choi; Won-Hwa Park; Kyu Ho Park


Journal of Materials Science: Materials in Electronics | 2013

High resolution imaging analysis of CdSe/ZnS core–shell quantum dots (QDs) using Cs-corrected HR-TEM/STEM

Hui-Youn Shin; Dongseon Jang; Youngil Jang; M. J. Cho; Kyu Ho Park


Journal of Surface Analysis | 2011

The Growth Mechanism of Al-doped ZnO using Oxygen Controlled Seed Layer in Si based Thin Film Solar Cells

Minho Joo; Hui-Youn Shin; Jangho Lee; Seung-Kyu Moon; Taeho Moon; Kyu Ho Park


Journal of the Korean Physical Society | 2007

The Growth Characteristics of a GaN Layer on a Cone-Shaped Patterned Sapphire Substrate by TEM Observation

Hui-Youn Shin; Y. I. Chang; S.K. Kwon; K. T. Lee; M. J. Cho; Kyu Ho Park


Surface and Interface Analysis | 2012

Microstructural characterization of abnormal grain growth behavior of Al-doped ZnO in thin film solar cells

Hui-Youn Shin; Minho Joo; Seung-Kyu Moon; Taeho Moon; Kyu Ho Park

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