Huihui Zhu

Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiOx) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiOx TFTs, together with the characteristics of NiOx thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al2O3) gate dielectric, the electrical performance of NiOx TFT was improved significantly compared with those based on SiO2 dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm2/V s, which is mainly beneficial from the high areal capacitance of the Al2O3 dielectric and high-quality NiOx/Al2O3 interface. This simple solution-based method for pr...

Eco-friendly water-induced aluminum oxide dielectrics and their application in a hybrid metal oxide/polymer TFT

Solution-processed oxide semiconductors have been widely studied with the objective of achieving high-performance, sustainable and low-cost electronic devices. In this report a simple and eco-friendly water-inducement method has been developed to fabricate high-k dielectrics and hybrid thin-film transistors (TFTs); introducing metal nitrates and deionized water as the precursor materials. The AlOx dielectric films annealed at temperatures higher than 350 °C result in low leakage current densities and the dielectric constants are nearly 7. Instead of the conventional oxide semiconductors, water-induced (WI) polyvinylprrolidone (PVP) was introduced into the In2O3 solution to form a hybrid metal oxide/polymer channel layer. The 250 °C-annealed WI In2O3 : PVP TFTs based on AlOx dielectric exhibit outstanding electrical performances and high stability. These promising properties were obtained at an ultra-low operating voltage of 2 V. The WI metal oxide/polymer hybrid TFTs are promising alternatives for applications in low-cost, low-consumption and eco-friendly flexible electronics.

Solution Combustion Synthesis: Low‐Temperature Processing for p‐Type Cu:NiO Thin Films for Transparent Electronics

Low-temperature solution processing opens a new window for the fabrication of oxide semiconductors due to its simple, low cost, and large-area uniformity. Herein, by using solution combustion synthesis (SCS), p-type Cu-doped NiO (Cu:NiO) thin films are fabricated at a temperature lower than 150 °C. The light doping of Cu substitutes the Ni site and disperses the valence band of the NiO matrix, leading to an enhanced p-type conductivity. Their integration into thin-film transistors (TFTs) demonstrates typical p-type semiconducting behavior. The optimized Cu5% NiO TFT exhibits outstanding electrical performance with a hole mobility of 1.5 cm2 V-1 s-1 , a large on/off current ratio of ≈104 , and clear switching characteristics under dynamic measurements. The employment of a high-k ZrO2 gate dielectric enables a low operating voltage (≤2 V) of the TFTs, which is critical for portable and battery-driven devices. The construction of a light-emitting-diode driving circuit demonstrates the high current control capability of the resultant TFTs. The achievement of the low-temperature-processed Cu:NiO thin films via SCS not only provides a feasible approach for low-cost flexible p-type oxide electronics but also represents a significant step toward the development of complementary metal-oxide semiconductor circuits.

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

Although there are a few research studies on solution-processed p-channel oxide thin-film transistors (TFTs), the strict fabrication conditions and the poor electrical properties have limited their applications in low-power complementary metal oxide semiconductor (CMOS) electronics. Here, the application of the polyol reduction method for processing p-type CuxO and NiOx channel layers and their implementation in TFT devices are reported. The optimized CuxO and NiOx TFTs were achieved at low annealing temperatures (∼300 °C) and exhibited decent electrical properties. Encouraged by the inspiring results obtained on SiO2/Si substrates, the TFT performance was further optimized by device engineering, employing high-k AlOx as the gate dielectric. The fully solution-processed NiOx/AlOx TFT could be operated at a low voltage of 3.5 V and exhibits a high hole mobility of around 25 cm2 V−1 s−1. Our work demonstrates the ability to grow high-quality p-type oxide films and devices via the polyol reduction method over large area substrates while at the same time it provides guidelines for further p-type oxide material and device improvements.

In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors

Solution-processed n-type oxide semiconductors have received great interest in thin-film transistor (TFT) applications. However, solution-processed p-type oxide semiconductors are not as successful as their n-type counterparts because of the lack of material choice and their complicated fabrication procedures. In this study, a simple one-step synthetic method was employed to fabricate a p-type Cu2O thin film via in-situ reaction of a CuI film in aqueous NaOH solution at room temperature. The structure, morphology, and component variations as a function of annealing conditions (≤350 °C) were investigated. The analysis indicates that the phase evolution of Cu2O → Cu2O + CuO → CuO occurred at higher temperatures and the pure CuO phase was achieved at 250 °C. The crystallinity, average grain size, and surface morphology of the CuxO thin films were found to increase in slope as the annealing temperature increased. To explore the possible applications of the obtained CuxO films as semiconducting channel components, bottom-gated TFTs on SiO2 gate dielectrics were constructed and examined. The hole mobility of the optimized device was calculated to be 0.32 cm2 V−1 s−1, along with an on/off current ratio of 5 × 104, and a subthreshold swing of 1.1 V dec−1. The further integration of the CuxO film on an Al2O3 high-k dielectric achieves an improved device performance at 2.5 V. This work successfully demonstrates a simple method to fabricate p-type Cu-based thin films and TFTs via a solution route, which represents a great step towards the development of low-cost and all-oxide complementary metal oxide semiconductor electronics.

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

In this study, amorphous indium-tungsten oxide (IWO) semiconductor thin films were prepared by an eco-friendly spin-coating process using ethanol and water as solvents. The electrical properties of IWO thin-film transistors (TFTs), together with the structural and morphological characteristics of IWO thin films, were systematically investigated as functions of tungsten concentration and annealing temperature. The optimized IWO channel layer was then integrated on an aqueous aluminum oxide (AlOx) gate dielectric. It is observed that the solution-processed IWO/AlOx TFT presents high stability and improved characteristics, such as an on/off current ratio of 5 × 107, a field-effect mobility of 15.3 cm2 V−1 s−1, a small subthreshold slope of 68 mV dec−1, and a threshold voltage shift of 0.15 V under bias stress for 2 h. The IWO/AlOx TFT could be operated at a low voltage of 2 V, which was 15 times lower than that of conventional SiO2-based devices. The solution-processed IWO thin films synthesized in a green route would be promising candidates for large-area and high-performance low-cost devices.

Electrospun p-type CuO nanofibers for low-voltage field-effect transistors

One-dimensional metal-oxide nanofibers show great promise as the basis for nano-device platforms due to their large surface to volume ratio and unique electrical properties. Here, we represent the facile fabrication of p-type CuO nanofibers utilizing the electrospinning technique for field-effect transistors (FETs), which incorporate CuO nanofibers as a channel and high-κ Al2O3 as a dielectric layer. The FETs exhibit typical p-type characteristics with a high hole mobility of 3.5 cm2/Vs at a low operating voltage of 4 V, fast switching speed, and modulation of light emission over the external light-emitting diode.

Quantifying the Tunable Conjugated Area of Graphene Oxide by Using Pyrene as a Fluorescent Probe

The determination of oxygenous groups, conjugated area ratio, and reduction efficiency of graphene oxide (GO) is a difficult task because of its heterogeneous structure. Herein, a novel approach is described for a detailed understanding of the surface chemistry of GO by using pyrene as a fluorescent probe through π-π stacking interactions.

Direct transfer of graphene and application in low-voltage hybrid transistors

A novel scotch tape assisted direct transfer of graphene onto different flexible and rigid substrates, including paper, polyethylene terephthalate, flat and curved glass, SiO2/Si, and a solution-processed high-k dielectric layer is presented. This facile graphene transfer process is driven by the difference in adhesion energy of graphene with respect to tape and a target substrate. In addition, the graphene films transferred by scotch tape are found to be cleaner, more continuous, less doped and higher-quality than those transferred by PMMA. Based on that, the tape transferred graphene is employed as a carrier transport layer in oxide thin-film transistors (TFTs) with different gate dielectrics (i.e., SiO2 and high-k ZrO2). The In2O3/graphene/SiO2 TFTs exhibit a high electron mobility of 404 cm2 V−1 s−1 and a high on/off current ratio of 105, while the counterpart In2O3/graphene/ZrO2 TFTs exhibit improved electron transport properties at an ultra-low operating voltage of 3 V, which is 20 times lower than that of SiO2-based devices. In contrast, the ZrO2-based TFTs with PMMA-transferred graphene exhibit no detective electrical properties. Therefore, the proposed scotch tape assisted transfer method will be particularly useful for the production of graphene films and other two-dimensional materials in more cost-effective and environmentally friendly modes for broad practical applications beyond graphene-based field-effect transistors (GFETs).