Huiqing Lu

Baromagnetic Effect in Antiperovskite Mn3Ga0.95N0.94 by Neutron Powder Diffraction Analysis

A baromagnetic effect in a novel tetragonal magnetic structure is introduced by vacancies in Mn3 Ga0.95 N0.94 , due to the change of the Mn-Mn distance and their spin re-orientation induced by a pressure field. This effect is proven for the first time in antiperovskite compounds by neutron powder diffraction analysis. This feature will enable wide applications in magnetoelectric devices and intelligent instruments.

Negative Thermal Expansion over a Wide Temperature Range in Fe-Doped MnNiGe Composites

Fe-doped MnNiGe alloys were successfully synthesized by solid-state reaction. Giant negative thermal expansion (NTE) behaviors with the coefficients of thermal expansion (CTE) of −285.23 × 10−6 K−1 (192–305 K) and −1167.09 × 10−6 K−1 (246–305 K) have been obtained in Mn0.90Fe0.10NiGe and MnNi0.90Fe0.10Ge, respectively. Furthermore, these materials were combined with Cu in order to control the NTE properties. The results indicate that the absolute value of CTE gradually decreases with increasing Cu contents. In Mn0.92Fe0.08NiGe/x%Cu, the CTE gradually changes from −64.92 × 10−6 K−1 (125–274 K) to −4.73 × 10−6 K−1 (173–229 K) with increasing value of x from 15 to 70. The magnetic measurements reveal that the NTE behaviors in this work are strongly correlated with the process of the magnetic phase transition and the introduction of Fe atoms could also change the spiral anti-ferromagnetic (s-AFM) state into ferromagnetic (FM) state at low temperature. Our study launches a new candidate for controlling thermal expansion properties of metal matrix materials which could have potential application in variable temperature environment.

Rectifying Characteristics and Semiconductor–Metal Transition Induced by Interfacial Potential in the Mn3CuN/n-Si Intermetallic Heterojunction

The Mn3CuN/n-Si heterojunction device is first designed in the antiperovskite compound, and excellent rectifying characteristics are obtained. The rectification ratio (RR) reaches as large as 38.9 at 10 V, and the open-circuit voltage Voc of 1.13 V is observed under temperature of 410 K. The rectifying behaviors can be well described by the Shockley equation, indicating the existence of a Schottky diode. Simultaneously, a particular semiconductor-metal transition (SMT) behavior at 250 K is also observed in the Mn3CuN/n-Si heterojunction. The interfacial band bending induced inversion layer, which is clarified by the interfacial schematic band diagrams, is believed to be responsible for the SMT and rectifying effects. This study can develop a new class of materials for heterojunction, rectifying devices, and SMT behaviors.