Huizhong Ma

Nano-structure, magnetic and optical properties of Co-doped ZnO films prepared by a wet chemical method

Co-doped ZnO films with nanorod structures are fabricated by a simple wet chemical method combined with an electrodeposition process on the ITO substrates. This method is proved to be a repeatable, low-cost and high-yield route to synthesize Co-doped ZnO magnetical nanocrystals. SEM measurements show the nanorod structure. X-ray diffraction (XRD) spectra demonstrate that the nanorods are ZnO crystals with (1 0 0) and (1 0 1) preferential orientation. X-ray photoelectron spectroscopy results indicate that Co is distributed in the ZnO nanorods. The magnetic properties of the films were investigated by the vibrating sample magnetometer measurement at room temperature. The photoluminescence spectra of the films were measured by an F-4500 fluorospectrophotometer at room temperature, and the results indicate that Co doping causes the red-shift of the band gap.

Growth and field electron emission properties of nanostructured white carbon films

Nano-structured white carbon films were synthesized by microwave plasma chemical vapor deposition. The X-ray diffraction line at 2thetas=21.6deg (d=0.4107 nm) corresponds to the (110) facet of beta modifications of white carbon. The peak position at 283.46 eV in X-ray photoelectron spectrum represents binding energy of C 1s core level of sp1-hybridization of carbon. Field electron emission characteristics of the film were tested

Pulsed laser deposition of zinc oxide luminescent thin films

Zinc oxide (ZnO) luminescent thin films have been prepared on ITO-glass substrates by pulsed laser deposition with a KrF excimer laser. We investigated the luminance of the ZnO films depending on laser fluence and the effects of postannealing. We have tested the crystallinity of the samples by x-ray diffraction and analyzed the growth mechanism to explain high-quality ZnO luminescent thin-film preparation by adjusting laser fluence and postannealing treatment.

Electroluminescence of diamond:Ce thin films

We have observed light emission with a luminance of 3.5 cd m−2 from a diamond:Ce thin-film electroluminescence device at an applied voltage of 150 V. The electroluminescence spectrum at room temperature shows main peaks centred at 454 and 490 nm, which are attributed to isolated emission centres of Ce3+ ions.

Growth and Field Electron Emission Properties of Nano-Structured White Carbon Films

Nano-structured white carbon films were synthesized by microwave plasma chemical vapor deposition. The X-ray diffraction line at 2thetas=21.6deg (d=0.4107 nm) corresponds to the (110) facet of beta modifications of white carbon. The peak position at 283.46 eV in X-ray photoelectron spectrum represents binding energy of C 1s core level of sp1-hybridization of carbon. Field electron emission characteristics of the film were tested

Fabrication of amorphous CN/sub x/:B films by pulsed laser deposition

Amorphous CN/sub x/:B thin films were fabricated on titanium coated ceramic substrate by using a new doping method of pulsed laser deposition, In which graphite target and BN target were alternatively used to be vaporized sources during deposition. As-deposited films were analyzed by x-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. XRD measurement shows that no any diffraction peaks on the spectrum. The FITR analysis of the sample suggests that the broad absorption band between 500 and 1700cm-1 is attributed to SP2C-C bonding, SP3C-N bonding, and silicon absorption band. Such infrared absorption feature could be further confirmed by Raman spectrum. The electron field emission characteristics of thin films were investigated. The turn-on field was 6.5 V //spl mu/n . The current density was 78/spl mu/A/cm2 at an electric field of 1IV //spl mu/m.