Hung-Ta Wang

Hydrogen-selective sensing at room temperature with ZnO nanorods

The sensitivity for detecting hydrogen with multiple ZnO nanorods is found to be greatly enhanced by sputter-depositing clusters of Pd on the surface. The resulting structures show a change in room- temperature resistance upon exposure to hydrogen concentrations in N2 of 10–500ppm of approximately a factor of 5 larger than without Pd. Pd-coated ZnO nanorods detected hydrogen down to 2.6% at 10ppm and >4.2% at 500ppm H2 in N2 after a 10min exposure. There was no response at room temperature to O2. Approximately 95% of the initial ZnO conductance after exposure to hydrogen was recovered within 20s by exposing the nanorods to either air or pure O2. This rapid and easy recoverability make the Pd-coated nanorods suitable for practical applications in hydrogen-selective sensing at ppm levels at room temperature with <0.4mW power consumption.

Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods

A comparison is made of the sensitivities for detecting hydrogen with Pt-coated single ZnO nanorods and thin films of various thicknesses (20–350 nm). The Pt-coated single nanorods show a current response of approximately a factor of 3 larger at room temperature upon exposure to 500ppmH2 in N2 than the thin films of ZnO. The power consumption with both types of sensors can be very small (in the nW range) when using discontinuous coatings of Pt. Once the Pt coating becomes continuous, the current required to operate the sensors increases to the μW range. The optimum ZnO thin film thickness under our conditions was between 40–170 nm, with the hydrogen sensitivity falling off outside this range. The nanorod sensors show a slower recovery in air after hydrogen exposure than the thin films, but exhibit a faster response to hydrogen, consistent with the notion that the former adsorb relatively more hydrogen on their surface. Both ZnO thin and nanorods cannot detect oxygen.

The control of cell adhesion and viability by zinc oxide nanorods

The ability to control the behavior of cells that interact with implanted biomaterials is desirable for the success of implanted devices such as biosensors or drug delivery devices. There is a need to develop materials that can limit the adhesion and viability of cells on implanted biomaterials. In this study, we investigated the use of zinc oxide (ZnO) nanorods for modulating the adhesion and viability of NIH 3T3 fibroblasts, umbilical vein endothelial cells, and capillary endothelial cells. Cells adhered far less to ZnO nanorods than the corresponding ZnO flat substrate. The few cells that adhered to ZnO nanorods were rounded and not viable compared to the flat ZnO substrate. Cells were unable to assemble focal adhesions and stress fibers on nanorods. Scanning electron microscopy indicated that cells were not able to assemble lamellipodia on nanorods. Time-lapse imaging revealed that cells that initially adhered to nanorods were not able to spread. This suggests that it is the lack of initial spreading, rather than long-term exposure to ZnO that causes cell death. We conclude that ZnO nanorods are potentially useful as an adhesion-resistant biomaterial capable of reducing viability in anchorage-dependent cells.

Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors

ZnO nanorod-gated AlGaN∕GaN high electron mobility transistors (HEMTs) are demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on the gate area using low temperature hydrothermal decomposition to immobilize glucose oxidase (GOx). The one-dimensional ZnO nanorods provide a large effective surface area with high surface-to-volume ratio and provide a favorable environment for the immobilization of GOx. The AlGaN∕GaN HEMT drain-source current showed a rapid response of less than 5s when target glucose in a buffer with a pH value of 7.4 was added to the GOx immobilized on the ZnO nanorod surface. We could detect a wide range of concentrations from 0.5nMto125μM. The sensor exhibited a linear range from 0.5nMto14.5μM and an experiment limit of detection of 0.5nM. This demonstrates the possibility of using AlGaN∕GaN HEMTs for noninvasive exhaled breath condensate based glucose detection of diabetic application.

Carbon nanotube films for room temperature hydrogen sensing.

Thin, uniform, single-walled carbon nanotube films, made by a simple filtration process, subsequently coated with palladium, are shown to be promising detectors of hydrogen. The films detected hydrogen with relative responses of 20% at 100 ppm and 40% at 500 ppm concentrations. Most of the initial film conductance was recovered within 30 s by exposing the samples to air. This quick and easy recoverability make the Pd-coated nanotubes suitable for practical applications in room temperature hydrogen sensing while consuming only approximately 0.25 mW power. The film fabrication process provides highly reproducible control over the film thickness; an important ingredient for commercial production. In the course of this research strong evidence was obtained indicating that sputter deposition of metal onto the nanotubes, even under very low power, short exposure time conditions, does damage to the nanotubes.

Electroluminescence from ZnO nanowire/polymer composite p-n junction

The characteristics of a hybrid p-n junction consisting of the hole-conducting polymer poly(3,4-ethylene-dioxythiophene)-poly(styrene-sulfonate) (PEDOT/PSS) and n-ZnO nanorods grown on an n-GaN layer on sapphire are reported. Spin coating of polystyrene was used to electrically isolate neighboring nanorods and a top layer of transparent conducting indium tin oxide (ITO) was used to contact the PEDOT/PSS. Multiple peaks are observed in the electroluminescence spectrum from the structure under forward bias, including ZnO band edge emission at ∼383nm as well as peaks at 430, 640, and 748nm. The threshold bias for UV light emission was <3V, corresponding to a current density of 6.08Acm−2 through the PEDOT/PSS at 3V.

Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors

Chemical sensors can be used to analyze a wide variety of environmental and biological gases and liquids and may need to be able to selectively detect a target analyte. Different methods, including gas chromatography, chemiluminescence, selected ion flow tube, and mass spectroscopy, have been used to measure biomarkers. These methods show variable results in terms of sensitivity for some applications and may not meet the requirements for a handheld biosensor. A promising sensing technology utilizes AlGaN/GaN high electron mobility transistors (HEMTs). HEMT structures have been developed for use in microwave power amplifiers due to their high two dimensional electron gas (2DEG) mobility and saturation velocity. The conducting 2DEG channel of AlGaN/GaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. HEMT sensors can be used for detecting gases, ions, pH values, proteins, and DNA. In this paper we review recent progress on functionalizing the surface of HEMTs for specifi...

Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors

Antibody-functionalized Au-gated AlGaN∕GaN high electron mobility transistors (HEMTs) were used to detect prostate specific antigen (PSA). The PSA antibody was anchored to the gate area through the formation of carboxylate succinimdyl ester bonds with immobilized thioglycolic acid. The AlGaN∕GaN HEMT drain-source current showed a rapid response of less than 5s when target PSA in a buffer at clinical concentrations was added to the antibody-immobilized surface. The authors could detect a wide range of concentrations from 10pg∕mlto1μg∕ml. The lowest detectable concentration was two orders of magnitude lower than the cutoff value of PSA measurements for clinical detection of prostate cancer. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaN∕GaN HEMTs for PSA screening.

Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices.

In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application.

Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors

Bare Au gated and thioglycolic acid functionalized Au-gated AlGaN∕GaN high electron mobility transistors (HEMTs) were used to detect mercury (II) ions. Fast detection of less than 5s was achieved for thioglycolic acid functionalized sensors. This is the shortest response time ever reported for mercury detection. Thioglycolic acid functionalized Au-gated AlGaN∕GaN HEMT based sensors showed 2.5 times larger response than bare Au-gated based sensors. The sensors were able to detect mercury (II) ion concentration as low as 10−7M. The sensors showed an excellent sensing selectivity of more than 100 for detecting mercury ions over sodium or magnesium ions. The dimensions of the active area of the sensor and the entire sensor chip are 50×50μm2 and 1×5mm2, respectively. Therefore, portable, fast response, and wireless based heavy metal ion detectors can be realized with AlGaN∕GaN HEMT based sensors.