Hye-Keun Oh

Reduction of the absorber shadow effect by changing the absorber side wall angle in extreme ultraviolet lithography

The influence of transmission reduction by mask haze formation in ArF lithography

Mask error enhancement factor variation with pattern density for 65 nm and 90 nm line widths

Modeling for resist reflow of an elongated contact hole

Simulation of rectangular isolated pattern images by applying phase shift masks in high-exposure gaps to protect LCD photo masks

Prediction of the critical dimensions by using a threshold energy resist model

Calibration-free multichannel ellipsometry for retardance measurement

Lens aberration effect on the line width for different pattern shapes and duty ratios

Aerial image characterization for defects in an extreme-ultraviolet mask

A practical method of extracting the photoresist exposure parameters by using a dose-to-clear swing curve