Hyeon-Hun Yang

A Study on the Properties of MgF 2 Antireflection Film for Solar Cells

MgF2 is a current material used for optical applications in the ultraviolet and deep ultraviolet range. Process variables for manufacturing MgF2 thin film were established in order to clarify the optimum conditions for the growth of the thin film, dependant upon the process conditions, and then by changing a number of the vapor deposition conditions, substrate temperatures, and heat treatment conditions, the structural and optical characteristics were measured. Then, optimum process variables were thus derived. Nevertheless, modern applications still require improvement in the optical and structural quality of the deposited layers. In the present work, in order to understand the composition and microstructure of MgF2, single layers grown on a slide glass substrate using an Electron beam Evaporator (KV‐ 660), were analyzed and compared. The surface substrate temperature, having an effect on the quality of the thin film, was changed from 200°C to 350°C at intervals of 50°C. The heat treatment temperature, which also has an effect on the thin film, was changed from 200°C to 400°C at intervals of 50°C. The physical properties of the thin film were investigated at various fabrication conditions, such as the substrate temperature, the heat treatment temperature, and the heat treatment time, by X‐ray diffraction, and field emission‐scanning electron microscopy.

A Study of the Properties of CuInS 2 Thin Film by Sulfurization

The copper indium disulfide (CuInS 2) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The CuInS2 thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked (1) elemental layer deposited on a glass substrate by vacuum chamber annealing (2) with sulfurization for various times at a temperature of substrate temperature of 200°C. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of CuInS2 ternary compound semiconductor CuInS2 thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions (3,4), including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. (5) The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to 300°C at intervals of 100°C, and the annealing temperature of the thin film was varied RT to 550°C in intervals of 100°C.

A Study on Properties of CuInSe 2 Thin Films by Substrate Temperature and Annealing Temperature

Process variables for manufacturing the thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the , Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from at intervals of . The diffract fringe of X-ray, which depended upon the substrate temperature and the Annealing temperature of the manufactured thin film, was investigated. scanning electron microgaphs of represents a case that a sample manufactured at the substrate temperature of was thermally treated at . As a result, at of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known that under this condition, the most excellent thin film was formed, compared with the other conditions.

A Study on Properties of Al:ZnO Thin Films by Used RTP Method

Copyright 2013 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. A Study on Properties of Al:ZnO Thin Films by Used RTP Method

The Properties of HfO 2 Thin Films by DC/RF Magnetron Sputtering and Thermal Evaporation Method

[ ] thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the , Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from to at intervals of .ℊ攀Ѐ㘱〻ጀ䵥摩捩湥⁡湤⁨敬慴栀

A Study on Properties of N-type ZnS Deposited at Various RF Power for Solar Cell Applications

In this study, we use the soda lime glass as the substrate. We used the ultrasonicator. Glass was dipped in the acetone, methanol and DI water respectively for 10 minutes. Ar(99.99%)gas was used as the sputtering gas. We varied the RF power between 100~175 W with 25 W steps. Base pressure was kept by turbo molecular pump at torr. Working pressure was kept by injection of Ar gas. ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the RF power. Electrical properties were measured by hall effect methods at room temperature. The resistivity, carrier concentration, and hall mobility of ZnS deposited on glass substrate as a function of sputtering power. It can be seen that as the sputtering power increase from 100 to 175 W, the resistivity of the films on glass decreased significantly from to . This behavior could be explained by the effect of the sputtering power on the mobility and carrier concentration. When the RF power increases, the carrier concentration increases slightly while the resistivity decreases significantly. These variation originate from improved crystallinity and enhanced substitutional doping as the sputtering power increases.

A Study on Properties of CuInS 2 Thin Films by Cu/ln Ratio

[ ] thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature . And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor thin films with non-stoichiometry composition. thin film was well made at the annealed of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. The compositional deviations from the ideal chemical formula for material can be conveniently described by non-molecularity

Properties of CuInS2 Thin Films Fabricated by SEL Method

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Visible light-responsive titanium dioxide thin film prepared by reactive sputtering.

CuInS2 thin films were fabricated by sulphurization of S/In/Cu Stacked elemental layers (SEL) on slide glass substrates by annealing in vacuum of 10−3 Torr at temperature of 50 °C ∼ 350 °C. Some S/In/Cu SEL were vacuum annealed under a sulfur atmosphere. The thin films thus annealed were analyzed by measuring structural, electrical and optical properties. When CuInS2 thin films were made under a sulfur atmosphere, lattice constant of a and grain size of the thin film were a little larger than those in only vacuum annealing. The largest lattice constant of a and grain size was 5.63 A and 1.2 μm respectively. Also, when the thin films were made under a sulfur atmosphere, conduction types were all p-type with resistivities of around 10−1 Ωcm and optical energy band gaps of the films were a little larger than those in only vacuum and the largest optical energy band gap of CuInS2 thin film was 1.53 eV.Copyright