Hyong Seo Yoon

Layer dependence and gas molecule absorption property in MoS2 Schottky diode with asymmetric metal contacts.

Surface potential measurement on atomically thin MoS2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS2 thin flakes. Schottky diode devices using mono- and multi- layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS2 thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH3 and NO2 gases based on the metal work function and the Schottky barrier height change.

Terahertz and optical study of monolayer graphene processed by plasma oxidation

We report on our terahertz and optical study of monolayer graphene grown by chemical vapor deposition and processed by plasma oxidation. The plasma oxidation induces oxygen-related defects, and the resulting disorder increases the sheet resistance of graphene as measured via terahertz spectroscopy. The excitonic absorption peak weakens considerably and blue shifts upon plasma oxidation, resulting in higher transmittance in both the visible and ultraviolet regions. Our oxygen plasma-treated graphene also exhibits a free-carrier doping effect as confirmed by the blue shift of the Raman G band.

Crack-Release Transfer Method of Wafer-Scale Grown Graphene Onto Large-Area Substrates

We developed a crack-release graphene transfer technique for opening up possibilities for the fabrication of graphene-based devices. Graphene film grown on metal catalysts/SiO2/Si wafer should be scathelessly peeled for sequent transferring to a target substrate. However, when the graphene is grown on the metal catalyst on a silicon substrate, there is a large tensile stress resulting from the difference of the coefficient of thermal expansion in the catalyst and silicon. The conventional methods of detaching graphene from metal catalysts were found to induce considerable mechanical damage on graphene films during separation processes including metal wet etching. Here we report a new technique wherein bubbles generated by electrolysis reaction separate thin metal catalysts from the SiO2/Si wafer. The dry attachment of graphene to the target wafer was processed utilizing a wafer to wafer bonding technique in a vacuum. We measured the microscopic image, Raman spectra, and electrical properties of the transferred graphene. The optical and electrical properties of the graphene transferred by the bubbles/dry method are better than those of the graphene obtained by mechanical/wet transfer.

Microwave transmission in graphene oxide.

We investigated the radio-frequency transmission properties of reduced graphene oxide (GO) sheets including contact effects with the metal electrodes. GO sheets were prepared by dielectrophoresis and their structural characteristics were analyzed by x-ray photoelectron spectroscopy and Raman spectroscopy. The contact resistance was much higher than the intrinsic resistance over the entire frequency range, thus the contact resistance was considered as a dominant component of impedance in the radio-frequency regime. In the radio-frequency regime, GO sheets showed a drastic decrease in impedance based on a consistent decrease in the intrinsic and contact resistance. These results support the potential of GO as a radio-frequency interconnector with a solution-based fabrication method.

Surface roughness effects on the frequency tuning performance of a nanoelectromechanical resonator

Electrothermal heating is one of radio frequency tuning method in nanoelectromechanical resonators with magnetomotive transduction. This study confirmed that the surface roughness of the nanoresonator affects the electrothermal tuning performance under moderate conditions at room temperature. The effect of surface roughness on electrothermal tuning is complicated and involves interactions of mechanical and electrical properties. In addition, the electrothermal damping varied depending on the nanoscale molecular solid structure. These factors affect the signal-to-noise ratio, the effective stress of the beam, and the quality Q-factor of the nanoresonator.

Biotin-streptavidin detection with a graphene-oxide supported radio-frequency resonator

The detection of biotin-streptavidin binding was demonstrated by the resonance frequency measurement of a simple resonance circuit using graphene oxide dielectric. The resonance frequency was decreased to the lower frequency range as biotin and streptavidin were bound to the graphene oxide film. Graphene oxide dielectric provides dual advantages including quality-factor enhancement and high affinity for bio sensing. It was revealed that an increase in capacitance of the graphene oxide sheet was mainly responsible for the resonance frequency shift. The sensitivity to the capacitance change in the frequency-based detection technique can enable the advanced biosensing applications using graphene oxide sheet.

Contact effect of ReS2/metal interface

Rhenium disulfide (ReS2) has attracted immense interest as a promising two-dimensional material for optoelectronic devices owing to its outstanding photonic response based on its energy band gaps insensitivity to the layer thickness. Here, we theoretically calculated the electrical band structure of mono-, bi-, and trilayer ReS2 and experimentally found the work function to be 4.8 eV, which was shown to be independent of the layer thickness. We also evaluated the contact resistance of a ReS2 field-effect transistor using a Y-function method with various metal electrodes, including graphene. The ReS2 channel is a strong n-type semiconductor, thus a lower work function than that of metals tends to lead to a lower contact resistance. Moreover, the graphene electrodes, which were not chemically or physically bonded to ReS2, showed the lowest contact resistance, regardless of the work function, suggesting a significant Fermi-level pinning effect at the ReS2/metal interface. In addition, an asymmetric Schottky diode device was demonstrated using Ti or graphene for ohmic contacts and Pt or Pd for Schottky contacts. The ReS2-based transistor used in this study on the work function of ReS2 achieved the possibility of designing the next-generation nanologic devices.

Nonlinearity Control of Nanoelectromechanical Resonators

To achieve high performance of nanoelectromechanical resonators in room-temperature and low-vacuum conditions, the precise control of electrothermal power is critical in not only frequency tuning but also regulating nonlinearity in the radio-frequency range. This study presents theoretical analysis and experimental results for controlling nonlinearity of nanoelectromechanical resonators using nonlinear damping and stiffness terms. Experiments show that, with increasing electrothermal power, critical amplitude increases up to where the resonators display linear harmonic oscillation. As a result, the linearity of the resonator that has been driven into the nonlinear regime can be reclaimed.

Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

A van der Waals (vdW) Schottky junction between two-dimensional (2D) transition metal dichalcogenides (TMDs) is introduced here for both vertical and in-plane current devices: Schottky diodes and metal semiconductor field-effect transistors (MESFETs). The Schottky barrier between conducting NbS2 and semiconducting n-MoS2 appeared to be as large as ∼0.5 eV due to their work-function difference. While the Schottky diode shows an ideality factor of 1.8-4.0 with an on-to-off current ratio of 103-105, Schottky-effect MESFET displays little gate hysteresis and an ideal subthreshold swing of 60-80 mV/dec due to low-density traps at the vdW interface. All MESFETs operate with a low threshold gate voltage of -0.5 ∼ -1 V, exhibiting easy saturation. It was also found that the device mobility is significantly dependent on the condition of source/drain (S/D) contact for n-channel MoS2. The highest room temperature mobility in MESFET reaches to approximately more than 800 cm2/V s with graphene S/D contact. The NbS2/n-MoS2 MESFET with graphene was successfully integrated into an organic piezoelectric touch sensor circuit with green OLED indicator, exploiting its predictable small threshold voltage, while NbS2/n-MoS2 Schottky diodes with graphene were applied to extract doping concentrations in MoS2 channel.

Mechanical Properties Changes During Electrothermal RF Tuning in a Nanoelectromechanical Resonator

This paper demonstrates the electrothermal tuning of a nanoelectromechanical resonator correlated with the mechanical properties of an Al/SiC bilayer beam structure at radio frequencies under the moderate conditions. This study confirms a relatively low change in the quality factor (Q-factor) over a wide range of frequency tuning (Δfr = 2.4 MHz). The effective stress of the beam plays an important role in the resonance frequency modulation and is critical to the Q-factor during electrothermal tuning. The Q-factor was decreased with the stress variation. However, the resonant frequency is linearly tuned on the basis of varied effective beam stresses and no major scarification of the Q-factor was observed.