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Dive into the research topics where Hyun-Joon Roh is active.

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Featured researches published by Hyun-Joon Roh.


Journal of Physics D | 2015

How to determine the relative ion concentrations of multiple-ion-species plasmas generated in the multi-dipole filament source

Nam-Kyun Kim; Sung-Ryul Huh; Hyun-Joon Roh; Seolhye Park; Gon-Ho Kim

This paper introduces how to determine concentrations of ion species in a mixed gas plasma that are not linearly proportional to their neutral partial pressures. A particle balance model was developed to predict the relative ion concentrations in multiple-ion-species plasmas, considering their ionization rates and loss fluxes to the wall. Analysis is carried out especially with Ar/Xe and Ar/He multi-dipole plasmas in which the neutral gases are directly ionized by the mono-energetic primary electrons. The experimental data of ion concentrations were obtained using the ion acoustic wave measurement method of the concentration of two ion species. The comparison reveals that the ion concentration ratio is linearly proportional to the ratio of the ionization cross sections and the ion loss velocity between two gas species. Especially, the model prediction is improved with using the two-ion-species sheath model (recently reported by Baalrud and Hegna) for obtaining the ion loss velocity at the sheath boundary.


IEEE Transactions on Semiconductor Manufacturing | 2015

Enhancement of the Virtual Metrology Performance for Plasma-Assisted Oxide Etching Processes by Using Plasma Information (PI) Parameters

Seolhye Park; Sangmin Jeong; Yunchang Jang; Sangwon Ryu; Hyun-Joon Roh; Gon-Ho Kim

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification or advanced process control models on to the real-mass production lines efficiently, high-performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this paper, as an effective method to include the “good information” representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b- and q-factor and surface passivation parameters as PCs into the PCR-based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient dataset provided cases. For mass production data of 350 wafers, developed PI-based VM model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.


Journal of Physics D | 2015

Determination of electron energy distribution function shape for non-Maxwellian plasmas using floating harmonics method

Sung-Ryul Huh; Nam-Kyun Kim; Hyun-Joon Roh; Myung-Sun Choi; Seok-Hwan Lee; Gon-Ho Kim

A new floating harmonics method is developed to determine the electron energy distribution shape in the non-Maxwellian plasmas. The slope and curvature of the electron energy probability function (EEPF) at the floating potential can be obtained by measuring amplitude ratios among the first three sideband harmonics of the probe electron current. Together with the generalized EEPF formula, the EEPF shapes of the non-Maxwellian plasmas are able to be determined from the slope and curvature. Here, the new method is experimentally verified and its results are compared with EEPF measurements using the Langmuir probe (LP) method. The effective electron temperature and the EEPF shape parameter obtained by the method give good agreements with those of the LP measurements.


Fusion Science and Technology | 2015

Laser-Assisted Hμ Spectroscopy for Measurement of Negative Ion Density in a Hydrogen Plasma

Sung-Ryul Huh; Nam-Kyun Kim; Hyun-Joon Roh; Gon-Ho Kim

Abstract A novel laser-assisted Hμ spectroscopy is proposed to measure negative ion density in a hydrogen plasma. The laser-induced photodetachment of negative ions leads to a decrease in Hμ intensity due to blocking of the mutual neutralization channel associated with generation of H (n=3) atoms. The relationship between the reduced Hμ intensity and the negative ion density is investigated experimentally and analytically. It is observed that the reduced Hμ intensity follows the trend in the negative ion density as a function of pressure, indicating that this spectroscopy holds promise for determining the negative ion density. In addition, a departure from linearity between the reduced Hμ intensity and the negative ion density is also analyzed because it can affect the quantitative determination of the negative ion density in the laser-assisted Hμ spectroscopy. The departure is found to be attributed to the change in the mutual neutralization reaction rates depending on plasma conditions.


Journal of the Korean Physical Society | 2016

Observation of oversaturation-induced defect formation in tungsten irradiated by low energy deuterium ion

Younggil Jin; Jae-Min Song; Ki-Baek Roh; Nam-Kyun Kim; Hyun-Joon Roh; Yunchang Jang; Sangwon Ryu; Byeongjun Bae; Gon-Ho Kim


Journal of the Korean Physical Society | 2014

Characteristics of a non-Maxwellian electron energy distribution in a low-pressure argon plasma

Seolhye Park; Jae-Myung Choe; Hyun-Joon Roh; Gon-Ho Kim


Plasma Sources Science and Technology | 2017

Ion-neutral collision effect on ion-ion two-stream-instability near sheath-presheath boundary in two-ion-species plasmas

Nam-Kyun Kim; Jae-Min Song; Hyun-Joon Roh; Yunchang Jang; Sangwon Ryu; Sung-Ryul Huh; Gon-Ho Kim


IEEE Transactions on Semiconductor Manufacturing | 2018

Development of the Virtual Metrology for the Nitride Thickness in Multi-Layer Plasma-Enhanced Chemical Vapor Deposition Using Plasma-Information Variables

Hyun-Joon Roh; Sangwon Ryu; Yunchang Jang; Nam-Kyun Kim; Younggil Jin; Seolhye Park; Gon-Ho Kim


Journal of Physics D | 2017

Optical diagnostics for the highly populated tail of an electron energy distribution function in very-high-frequency capacitively coupled plasma using spin- and dipole-forbidden lines

Hyun-Joon Roh; Nam-Kyun Kim; Sangwon Ryu; Yunchang Jang; Gon-Ho Kim


Computers & Chemical Engineering | 2017

Design of optical emission spectroscopy based plasma parameter controller for real-time advanced equipment control

Junmo Koo; Daegeun Ha; Damdae Park; Hyun-Joon Roh; Sangwon Ryu; Gon-Ho Kim; Kye Hyun Baek; Chonghun Han

Collaboration


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Gon-Ho Kim

Seoul National University

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Sangwon Ryu

Seoul National University

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Nam-Kyun Kim

Seoul National University

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Yunchang Jang

Seoul National University

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Seolhye Park

Seoul National University

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Sung-Ryul Huh

Seoul National University

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Jae-Min Song

Seoul National University

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Jae-Myung Choe

Seoul National University

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Seok-Hwan Lee

Seoul National University

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