Hyung-Dol Park

Low roll-off of efficiency at high current density in phosphorescent organic light emitting diodes

The authors demonstrate that the reduction of quantum efficiency with increasing current density in phosphorescent light emitting diodes (PhOLEDs) is related to the formation of excitons in hole transporting layer based on the analysis of emission spectra and exciton formation zone. Low roll-off of efficiency in a PhOLED was achieved using dual emitting layers (D-EMLs) by confining the exciton formation near the interface between the emitting layers. The external quantum efficiency was maintained almost constant up to 22mA∕cm2 (10000cd∕m2) by adopting the D-EMLs in Ir(ppy)3 based PhOLEDs, resulting in high external quantum efficiency (ηext=13.1%) at high luminance.

Low driving voltage and high stability organic light-emitting diodes with rhenium oxide-doped hole transporting layer

The authors report a promising metal oxide-doped hole transporting layer (HTL) of rhenium oxide (ReO3)-doped N,N′-diphenyl-N,N′-bis (1,1′-biphenyl)-4,4′-diamine (NPB). The tris(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with ReO3-doped NPB HTL exhibit driving voltage of 5.2–5.4V and power efficiency of 2.2–2.3lm∕W at 20mA∕cm2, which is significantly improved compared to those (7.1V and 2.0lm∕W, respectively) obtained from the devices with undoped NPB. Furthermore, the device with ReO3-doped NPB layer reveals the prolonged lifetime than that with undoped NPB. Details of ReO3 doping effects are described based on the UV-Vis absorption spectra and characteristics of hole-only devices.

Ultraviolet nanoimprinted polymer nanostructure for organic light emitting diode application

Light extraction efficiency of a conventional organic light emitting diode (OLED) remains limited to approximately 20% as most of the emission is trapped in the waveguide and glass modes. An etchless simple method was developed to fabricate two-dimensional nanostructures on glass substrate directly by using ultraviolet (UV) curable polymer resin and UV nanoimprint lithography in order to improve output coupling efficiency of OLEDs. The enhancement of the light extraction was predicted by the three-dimensional finite difference time domain method. OLEDs integrated on nanoimprinted substrates enhanced electroluminance intensity by up to 50% compared to the conventional device.

Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film

We demonstrate ultrafast all-optical control of terahertz (THz) radiation through nanoresonators, slot antennas with a hundred micron length but submicron width in thin gold layers, fabricated on vanadium dioxide (VO2) thin films. Our THz nanoresonators show almost perfect transmission at resonance. By virtue of phase transition of VO2 from insulating to metallic state, induced in subpicosecond time scale by moderate optical pump, ultrafast control of THz transmission is enabled. This is compared to bare VO2 films where no switching dynamics are observed under similar conditions.

Silane- and triazine-containing hole and exciton blocking material for high-efficiency phosphorescent organic light emitting diodes

One of the important factors for high efficiency phosphorescent organic light-emitting devices is to confine triplet excitons within the emitting layer. We synthesized and characterized a new hole blocking material containing silane and triazine moieties, 2,4-diphenyl-6-(4′-triphenylsilanyl-biphenyl-4-yl)-1,3,5-triazine (DTBT). Electrophosphorescent devices fabricated using the material as the hole-blocking layer and N,N′-dicarbazolyl-4,4′-biphenyl (CBP) doped with fac-tris(2-phenylpyridine)iridium [Ir(ppy)3] as the emitting layer showed a maximum external quantum efficiency (ηext) of 17.5% with a maximum power efficiency (ηp) of 47.8 lm W−1, which are much higher than those of devices using bathcuproine (BCP) (ηext = 14.5%, ηp = 40.0 lm W−1) and 4-biphenyloxolate aluminium(III) bis(2-methyl-8-quinolinato)-4-phenylphenolate (BAlq) (ηext = 8.1%, ηp = 14.2 lm W−1) as hole-blocking layers.

Terahertz nanoresonators: Giant field enhancement and ultrabroadband performance

Transmission of terahertz (THz) electromagnetic waves through a series of nanoresonator arrays punctured in a thin metallic film is investigated. Over 30% of normalized transmitted amplitude is observed with only 0.18% of aperture-coverage, implying an electric field enhancement of 170. Increasing the coverage to 0.6% results in a 90% normalized amplitude, with a broader line width. Inspired by log-periodic antenna, we put ten nanoresonators with four different lengths per unit cell, succeeding in an ultrabroadband THz filter with one decade width between 0.2 and 2.0 THz.

Transparent, Low Resistance, and Flexible Amorphous ZnO-Doped In2O3 Anode Grown on a PES Substrate

Transparent and low resistance amorphous ZnO-doped In 2 O 3 (IZO) anode films were grown by radio-frequency (rf) sputtering on an organic passivated polyethersulfone (PES) substrate for use in flexible organic light-emitting diodes (OLEDs). Under optimized growth conditions, a sheet resistance of 15.2 Ω/□, average transmittance above 89% in the green range, and a root mean square roughness of 0.375 nm were obtained, even for the IZO anode film grown in a pure Ar ambient without the addition of oxygen as a reactive gas. All of the IZO anode films had an amorphous structure regardless of the rf power and the working pressure due to the low substrate temperature of 50°C and the structural stability of the amorphous IZO films. In addition, an X-ray photoelectron spectroscopy depth profile obtained for the IZO/PES showed no obvious evidence of interfacial reactions between the IZO anode and the PES substrate, except for some indiffusion of oxygen atoms from the IZO anode. Furthermore, the current-voltage-luminance of the flexible OLEDs fabricated on IZO anode was found to be critically dependent on the sheet resistance of the IZO anode.

Resonance behavior of single ultrathin slot antennas on finite dielectric substrates in terahertz regime

We investigate resonance behaviors of optically thin metallic slot antennas on finite substrates in terahertz frequency regime. By carefully analyzing theoretical and experimental results, we observe that slot antennas fabricated in a gold film with a thickness below the skin depth of gold show blueshifted resonance frequencies for the increasing slot width, while the opposite resonance behaviors appear when the slot antennas are perforated in perfectly electric conductor. In addition, we find that for slot antenna sustained by a finite substrate its thickness and the slot width are additional crucial factors determining the resonance frequency of slot antennas.

Electrical transport properties of the potassium doped bulk fullerene, KxC60

Abstract Temperature dependent thermoelectric power (TEP) and conductivity of the potassium doped bulk fullerene, K x C 60 , of different potassium doping concentrations are reported. The potassium contents are determined by chemical analyses. The resistivity drop at T=18K has been confirmed. Although, the room temperature resistivity values are more or less the same for various K x C 60 samples (typically σ RT = 10 S/cm), the TEP values are very much different. The sign of TEP is positive and its temperature dependence shows a big transition at around T = 150K. Interesting observation is that the TEP drops to zero at around 60K ∼ 80K for certain samples whose resistivity keep increasing at this temperature region.

Electrical control of terahertz radiation through nanoresonators on VO 2

We demonstrate electrical control of terahertz radiation through nanoresonators on VO2 thin film. By electrically induced insulator-to-metal phase transition, terahertz radiation can be switched-off. Transmission is decreased by one order of magnitude even when the film thickness is in nanoscale.