Hyung-Ik Lee

In-depth concentration distribution of Ar in Si surface after low-energy Ar+ ion sputtering

Abstract The in-depth concentration of Ar atoms in Si surface after Ar + ion sputtering was investigated using medium-energy ion spectroscopy (MEIS) and dynamic Monte Carlo simulation. The primary Ar + ion energy was 0.5, 1 and 3 keV, and the primary Ar + ion beam direction was varied from surface normal to glancing angle. In the case of the surface normal incidence, the MEIS result shows that the maximum atomic concentration of Ar atoms increases from 6% at the depth of 2 nm to 16% at the depth of 3 nm as the primary ion energy increases from 0.5 to 3 keV. However, in the case of the incident angle of 80°, that is 2.5% at the depth of 1.5 nm when the primary energy is 3 keV, in-depth Ar distribution cannot be observable when the primary ion energy is 0.5 keV. Dynamic Monte Carlo simulation reproduced the in-depth concentration distribution of Ar atoms quantitatively.

Estimation of the electronic straggling using delta-doped multilayers

Abstract It is proposed that the electronic straggling of projectile ion beams for medium energy ion scattering spectroscopy (MEIS) can be estimated with delta-doped multilayers. From the depth dependence of the full width half maximum (FWHM) of the Ta peak of a Ta delta-doped Si multilayer, the electronic straggling of 100 keV H+ in Si could be estimated. The electronic straggling can be estimated without information on the exact thickness and the interface abruptness of the Ta delta-doped multilayers. The reduced electronic straggling, Ω e /Ω B was estimated to be 0.59. With the experimentally determined electronic straggling, the thickness of the Ta delta layer could be estimated and compared with the nominal thickness based on the growth rate determined by transmission electron microscopy (TEM).

Multiple As delta layered Si thin films for SIMS quantification and depth scale calibration

SIMS quantification and depth scale calibration has been based on ion implanted standards. In this work, the feasibility of using multiple delta layer reference materials for quantitative SIMS depth profiling is tested and presented. Preliminary studies on application of multiple As delta layer Si thin films to shallow junction analysis will be presented and discussed.