Hyunsung Ko

Energy-level engineering of self-assembled quantum dots by using AlGaAs alloy cladding layers

The ground-state energy level of an InAs quantum dot (QD) system can be changed from 1070 to 700 nm by changing the aluminum composition in the AlxGa1−xAs matrix. For all the QDs, the lattice-mismatched strains are the same as that of InAs/GaAs QDs, so that QDs are easily formed. Photoluminescence signals from the structures were strong at low temperature and stayed relatively high at room temperature. The results suggest that these highly strained QDs in the alloy matrices could be an excellent choice for the energy-level engineering of QDs.

Bias field tailored plasmonic nano-electrode for high-power terahertz photonic devices.

Photoconductive antennas with nano-structured electrodes and which show significantly improved performances have been proposed to satisfy the demand for compact and efficient terahertz (THz) sources. Plasmonic field enhancement was previously considered the dominant mechanism accounting for the improvements in the underlying physics. However, we discovered that the role of plasmonic field enhancement is limited and near-field distribution of bias field should be considered as well. In this paper, we clearly show that the locally enhanced bias field due to the size effect is much more important than the plasmonic enhanced absorption in the nano-structured electrodes for the THz emitters. Consequently, an improved nano-electrode design is presented by tailoring bias field distribution and plasmonic enhancement. Our findings will pave the way for new perspectives in the design and analysis of plasmonic nano-structures for more efficient THz photonic devices.

Fabrication of a TFF-Attached WDM-Type Triplex Transceiver Module Using Silica PLC Hybrid Integration Technology

An optical triplex transceiver (TRx) module, which consists of thin-film filter (TFF)-attached wavelength-division multiplexer (WDM) and photodiode (PD) carriers, has been fabricated using a silica planar lightwave circuit (PLC) hybrid integration technology. Two types of TFFs were attached to a diced sidewall of a silica-terraced PLC platform to realize the TFF-attached WDM. The PD carriers with a 45deg mirror, on which receiving surface-illuminated PDs were bonded, were assembled with the PLC platform to form receiver (Rx) parts. As the main performances of the packaged TRx module, a very clear transmitter (Tx) eye pattern and minimum Rx sensitivity of -25.7 dBm were obtained under a 1.25-Gb/s Tx-Rx operation for digital applications. For an analog Rx application, a module responsivity of about 0.8 A/W was achieved, and a second-order intermodulation distortion value of less than -70 dBc at an optical modulation index of 40% was obtained under a two-tone test of 400 and 450 MHz

Wavelength Tuning of Vertical-Cavity Surface-Emitting Lasers by an Internal Device Heater

We have fabricated thermal-induced wavelength- tunable vertical-cavity surface-emitting lasers with a 780-nm emission wavelength that is tunable by using an internal device heater. A 5.36-nm tuning range was achieved by means of a 70-mA tuning current and a 3.5-mA driving current while maintaining continuous single-mode operation and the optical power variation is less than 2.5 dB in the tuning range. In addition, a multimode tuning range of 9.1 nm was achieved with a 90-mA tuning current and a 7-mA driving current.

The characterization of all-optical 3R regeneration based on InP-related semiconductor optical devices

We report characterization and experimental realization of recent InP-related semiconductor optical devices for all-optical 3R regeneration. A Mach-Zehnder interferometric wavelength converter (MZ IWC) with preamplifiers gives an extinction ratio (ER) improvement and a negative power penalty for all-optical reamplification and reshaping (2R) of pseudorandom bit sequence (PRBS) nonreturn-to-zero (NRZ) data at 10 Gb/s. In addition, we briefly describe the mechanism for injection locking of the multisection laser diode with a distributed feedback (DFB) reflector. Using this device, we demonstrate clock recovery from PRBS return-to-zero (RZ) and NRZ data. The achieved rms timing jitter is less than 1 ps for the input of 11.727 Gb/s PRBS RZ and NRZ. All-optical 3R regeneration leads to a good performance using the MZ IWC and multisection DFB LD. The combination of these functions provides all-optical 3R regeneration with NRZ to RZ conversion. For the realization of a small and compact 3R regeneration module, we propose the hybrid module packaging process, which is composed of 2R and 1R semiconductor chip in single butterfly-type module

Bimodal roughness of heterointerface in quantum wells analyzed by photoluminescence excitation spectroscopy

Photoluminescence excitation (PLE) studies were performed on GaAs‐Al0.25Ga0.75As quantum wells (QWs) with fractional monolayer differences. The quantized PLE peaks and their submonolayer shifts clearly show that the heterointerface of thin QWs prepared by growth‐interrupted molecular beam epitaxy has islands which extend out a lateral dimension larger than 100 A, but they themselves have the microroughness smaller than 30 A. The result of this work using exciton as the probe provides a clear evidence supporting the bimodal roughness model.

Harmonic Signal Generation and Frequency Up-Conversion Using a Hybrid Mode-Locked Multisection DFB Laser

Harmonic signal generation and frequency up-conversion are demonstrated using a hybrid mode-locked multisection distributed-feedback (MS-DFB) laser. Hybrid mode-locking is realized by direct injection of electrical local oscillator (LO) signals into the laser gain control section. The harmonic signals are generated when multiple optical modes produced by the hybrid mode-locked MS-DFB laser are detected in a photodiode (PD). In addition, if data signals at fIF are applied to the device along with LO signals at fLO, optical sidebands separated from the optical modes by fIF are generated and harmonic up-converted signals are obtained by mode-beating in PD. Using this method, we demonstrate generation of the third-harmonic millimeter-waves at 30.79 GHz with fLO at 10.263 GHz, and up-conversion of 12.5-Mb/s 32 quadrature amplitude modulation data at 300-MHz fIF into 30-GHz band

Thermally controlled wavelength locker integrated in widely tunable SGDBR-LD module

A sampled-grating distributed Bragg reflector laser module having an integrated multiwavelength locker has been developed and evaluated. The uniquely designed wavelength locker made of thermally controlled etalon has provided uniform wavelength monitoring and very stable wavelength locking in the 188-ITU grid channels (37 nm) with 25-GHz spacing. Over the case temperature from -5/spl deg/C to 65/spl deg/C, the laser wavelength was locked within /spl plusmn/0.5 GHz, and the total power consumption of the module was less than 4 W.

Fabrication of Tunable Sampled Grating DBR Laser Integrated Monolithically with Optical Semiconductor Amplifier Using Planar Buried Heterostructure

We have demonstrated a high-power widely tunable sampled grating (SG) DBR laser integrated monolithically with optical semiconductor amplifier (SOA), using planar buried heterostructure (PBH). The measured threshold current was 5 mA on average with 60 chips randomly selected which is lowest among the typical average values. Fiber-coupled output power was 12.4 dBm and the output power variation was ?1 dB for the whole tuning range.

Magnetoluminescence Study on the Low-Dimensionality of Excitons Confined in a Narrow GaAs/AlGaAs Quantum Well

Low-dimensional characteristics of excitons confined in a quantum well (QW) are studied by applying a high magnetic field (B). The diamagnetic shift is best fit with a linear combination of linear and quadratic terms of B. From the quadratic dependence of B, it is obtained that the exciton becomes two-dimensional (2-D) like when the QW width decreases to 15 monolayers (ML). However, the 2-D confinement becomes weak when the width becomes smaller than 10 ML. In large B, the field confinement becomes significant in the electron-hole recombination, and the population inversion of the photo-generated carriers in the islands of ML fluctuation was observed.