I. A. Derebezov

Single-mode vertical-cavity surface emitting lasers for 87Rb-based chip-scale atomic clock

The results of numerical simulation and study of lasing characteristics of semiconductor verticalcavity surface-emitting lasers based on AlxGa1 − xAs alloys are presented. Lasers exhibit stable single-mode lasing at a wavelength of 795 nm at low operating currents ∼1.5 mA and an output power of 350 μW, which offers prospects of their applications in next-generation chip-scale atomic clocks

Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots

A semiconductor Bragg microcavity structure for single photon emitters is designed and implemented. The design provides the efficient current pumping of selectively positioned InAs quantum dots within a micrometer-size aperture, high external quantum yield, and low divergence of the emitted radiation.

Fine structure of the exciton states in InAs quantum dots

The fine structure of the exciton states in InAs quantum dots grown by the Stranski-Krastanov method with short growth interruptions has been studied by microphotoluminescence at cryogenic temperatures. It has been demonstrated that, with increasing quantum-dot size, the splitting of the exciton states increases steadily to ∼102 μeV. It has been shown that, in the exciton energy range of 1.3–1.4 eV, the magnitude of this splitting is comparable to the natural width of the exciton lines. This result is important for the development of entangled photon pair emitters based on InAs quantum dots.

AlInAs quantum dots

A system of quantum dots on the basis of AlxIn1-xAs/AlyGa1-y As solid solutions has been studied. The usage of broadband AlxIn1-x solid solutions as the basis of quantum dots makes it possible to expand considerably the spectral emission range into the short-wave region, including the wavelength region near 770 nm being of interest for the design of aerospace systems of quantum cryptography. The optical characteristics of single AlxIn1-xAs quantum dots grown according to the Stranski–Krastanov mechanism are studied by the cryogenic microphotoluminescence method. The fine structure of exciton states of quantum dots is studied in the wavelength region near 770 nm. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of AlxAs1-x quantum dots.

Spectroscopy of Single AlInAs Quantum Dots

A system of quantum dots based on AlxIn1−xAs/AlyGa1−yAs solid solutions is investigated. The use of AlxIn1−xAs wide-gap solid solutions as the basis of quantum dots substantially extends the spectral emission range to the short-wavelength region, including the wavelength region near 770 nm, which is of interest for the development of aerospace systems of quantum cryptography. The optical characteristics of AlxIn1−xAs single quantum dots grown by the Stranski–Krastanov mechanism were studied by cryogenic microphotoluminescence. The statistics of the emission of single quantum dot excitons was studied using a Hanbury Brown–Twiss interferometer. The pair photon correlation function indicates the sub-Poissonian nature of the emission statistics, which directly confirms the possibility of developing single-photon emitters based on AlxIn1−xAs quantum dots. The fine structure of quantum dot exciton states was investigated at wavelengths near 770 nm. The splitting of the exciton states is found to be similar to the natural width of exciton lines, which is of great interest for the development of entangled photon pair emitters based on AlxIn1−xAs quantum dots.

Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity

The results of numerical modeling and investigation of a hybrid microcavity based on a semiconductor Bragg reflector and a microlens selectively positioned above a single (111) In(Ga)As quantum dot are presented. Emitters based on the hybrid microcavity demonstrate the effective pumping of a single quantum dot and high emission output efficiency. The microcavity design can be used to implement emitters of polarization- entangled photon pairs based on single semiconductor quantum dots.

Hybrid microcavity for superminiature single quantum dot based emitters

This paper describes the development and implementation of a microcavity based on a semiconductor Bragg reflector and a microlens selectively positioned over a single (111) InGaAs quantum dot. The structure of the microcavity ensures effective pumping of quantum dots and high external quantum emission output efficiency. This microcavity can be used to create single photon emitters and emitters of entangled photon pairs based on single semiconductor quantum dots.

Spectroscopy of single InAs quantum dots

Ensembles of InAs quantum dots with a very low density (∼106 cm−2) are grown by molecular beam epitaxy, which allows the spectral characteristics of emission of single quantum dots to be studied by the method of cryogenic microphotoluminescence. With increasing quantum dot size, the splitting of exciton states is demonstrated to increase steadily to ∼102 µeV. In the exciton energy range of 1.3–1.4 eV, the magnitude of this splitting is comparable with the natural width of the exciton lines. This result is important for the development of emitters of entangled photon pairs based on InAs quantum dots.

Emitters based on semiconductor Bragg microcavities

This paper presents a brief review of the progress in the development of two types of semiconductor emitters based on semiconductor Bragg microcavities. The first type of these emitters is a vertical-cavity laser based on AlxGa1−xAs. The laser demonstrates stable single-mode lasing at a wavelength of 795 nm, which opens prospects for its use in miniature atomic frequency standards on the basis of Rb87. The second type is a single-photon emitter based on semiconductor quantum dots. The design of such an emitter was developed on the basis of a semiconductor Bragg microcavity providing a high level of external quantum efficiency of the emitter (up to 80%) and high performance due to the Purcell effect.

Single-mode vertical-cavity surface-emitting lasers for atomic clocks

A vertical-cavity surface-emitting laser on the basis of AlxGa1 − xAs solid solutions is developed. The laser displays stable single-mode operation at a wavelength of 795 nm, which offers the prospects of its application in miniature chip-scale atomic clocks.