I. C. Robin

Purcell effect for CdSe∕ZnSe quantum dots placed into hybrid micropillars

This letter reports the observation of the Purcell effect for CdSe∕ZnSe quantum dots located in a hybrid micropillar. The sample consist of a λ∕2‐ZnSe cavity sandwiched between two SiO2∕TiO2 Bragg reflectors. Time-resolved photoluminescence (PL) measurements on a series of single-quantum dots were used to probe the Purcell effect in a 1.1μm diameter pillar. A three-fold enhancement of quantum-dot spontaneous emission rate is observed for quantum dots in resonance with excited degenerated modes of the pillar. The variation of the PL decay shortening from dot to dot is interpreted calculating the theoretical maximal Purcell factor for the different modes resonant with the dots.

Photoluminescence studies of arsenic-doped Hg1-xCdxTe epilayers

Arsenic incorporation in HgCdTe epilayers has been achieved with a nonconventional radio frequency plasma source during molecular beam epitaxial growth. Photoluminescence studies were carried out on HgCdTe arsenic-doped samples. Measurements were done on the as-grown sample, after a Hg vacancy filling annealing and after a 400 °C activation annealing under Hg pressure. A comparison with extended x-ray absorption fine structure results allows us to assign the observed optical transitions to the Hg vacancies, As2Te3 glass and AsHg dopants. An optical signature of the arsenic site transfer upon activation annealing is found.

Temperature Dependence Of The Exciton Homogeneous Linewidth In CdTe and CdSe Self‐assembled Quantum Dots: Limit Of Single Photon Source Operation

Excitonic emission in single CdTe/ Zn0.7Mg0.3Te and CdSe/ZnSe quantum dots has been obtained up to 160 K and 220 K respectively. The study of the linewidth thermal broadening allows us to estimate the temperature limit of single photon emission in CdTe and CdSe QDs.