I. Luk'yanchuk

Phase analysis of quantum oscillations in graphite.

The quantum de Haas-van Alphen (dHvA) and Shubnikov-de Haas oscillations measured in graphite were decomposed by pass-band filtering onto contributions from three different groups of carriers. Generalizing the theory of dHvA oscillations for 2D carriers with an arbitrary spectrum and by detecting the oscillation frequencies using a method of two-dimensional phase-frequency analysis which we developed, we identified these carriers as (i) minority holes having a 2D parabolic massive spectrum p(2)(perpendicular)/2m(perpendicular), (ii) massive majority electrons with a 3D spectrum and (iii) majority holes with a 2D Dirac-like spectrum +/-vp(perpendicular) which seems to be responsible for the unusual strongly-correlated electronic phenomena in graphite.

Domain-enhanced interlayer coupling in ferroelectric/paraelectric superlattices.

We investigate the ferroelectric phase transition and domain formation in a periodic superlattice consisting of alternate ferroelectric (FE) and paraelectric (PE) layers of nanometric thickness. We find that the polarization domains formed in the different FE layers can interact with each other via the PE layers. By coupling the electrostatic equations with those obtained by minimizing the Ginzburg-Landau functional, we calculate the critical temperature of transition Tc as a function of the FE/PE superlattice wavelength Lambda and quantitatively explain the recent experimental observation of a thickness dependence of the ferroelectric transition temperature in KTaO3/KNbO3 strained-layer superlattices.

Ferroelectric transition in an epitaxial barium titanate thin film: Raman spectroscopy and x-ray diffraction study

We have performed x-ray diffraction and Raman spectroscopy measurements in the temperature range of 300–873 K on a single phase epitaxially oriented BaTiO3 thin film grown by pulsed laser deposition on a single crystal MgO substrate. The θ–2θ room temperature diffraction measurements and asymmetric rocking curves indicate that the film is very weakly tetragonal with the c-axis parallel to the plane of the film. X-ray diffraction measurements up to high temperature reveal only a change in slope in the perpendicular to the plane lattice parameter around 450 K (in bulk Tc=395 K) indicating that a diffuse-like of phase transition is taking place. Room temperature polarized Raman spectra show that the film is indeed tetragonal with C4v symmetry and with the a-axis perpendicular to the film plane. Monitoring of the overdamped soft mode and the 308 cm−1 mode confirms that the phase transition is taking place over a wide temperature range according to the x-ray results. The increase of the phase transition temper...

Symmetry relationship and strain-induced transitions between insulating M1 and M2 and metallic R phases of vanadium dioxide.

The ability to synthesize VO2 in the form of single-crystalline nanobeams and nano- and microcrystals uncovered a number of previously unknown aspects of the metal-insulator transition (MIT) in this oxide. In particular, several reports demonstrated that the MIT can proceed through competition between two monoclinic (insulating) phases M1 and M2 and the tetragonal (metallic) R phase under influence of strain. The nature of such phase behavior has been not identified. Here we show that the competition between M1 and M2 phases is purely lattice-symmetry-driven. Within the framework of the Ginzburg-Landau formalism, both M phases correspond to different directions of the same four-component structural order parameter, and as a consequence, the M2 phase can appear under a small perturbation of the M1 structure such as doping or stress. We analyze the strain-controlled phase diagram of VO2 in the vicinity of the R-M2-M1 triple point using the Ginzburg-Landau formalism and identify and experimentally verify the pathways for strain-control of the transition. These insights open the door toward more systematic approaches to synthesis of VO2 nanostructures in desired phase states and to use of external fields in the control of the VO2 phase states. Additionally, we report observation of the triclinic T phase at the heterophase domain boundaries in strained quasi-two-dimensional VO2 nanoplatelets, and theoretically predict phases that have not been previously observed.

Landau thermodynamic potential for BaTiO3

In this paper the description of the dielectric and ferroelectric properties of BaTiO3 single crystals using the Landau phenomenological thermodynamic potential was addressed. Our results suggest that when using the sixth-power free energy expansion of the thermodynamic potential, remarkably different values of the fourth-power coefficient, β (the coefficient of Pi4 terms), are required to adequately reproduce the nonlinear dielectric behavior of the paraelectric phase and the electric field induced ferroelectric phase (Eb∥[001]), respectively. In contrast, the eighth-power expansion with a common set of coefficients enables a good description for both phases at the same time. These features, together with the data available in literature, strongly attest to the necessity of the eighth-power terms in Landau thermodynamic potential of BaTiO3. In addition, the fourth-power coefficients, β and ξ (the coefficient of Pi2Pj2 terms), were evaluated from the nonlinear dielectric responses along [001], [011], and ...

Dirac and normal fermions in graphite and graphene : Implications of the quantum hall effect

Spectral analysis of the Shubnikov-de Haas magnetoresistance oscillations and the quantum Hall effect (QHE) measured in quasi-2D highly oriented pyrolytic graphite (HOPG) [Phys. Rev. Lett. 90, 156402 (2003)] reveals two types of carriers: normal (massive) electrons with Berry phase 0 and Dirac-like (massless) holes with Berry phase pi. We demonstrate that recently reported integer- and semi-integer QHEs for bilayer and single-layer graphenes take place simultaneously in HOPG samples.

Origin of Ferroelastic domains in Free-Standing Single Crystal Ferroelectric Films

The origin of the unusual

Universal properties of ferroelectric domains.

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Insulator-metal transition in Rb4C60 under pressure from 13C-NMR

ferroelectric/ferroelastic domains, consistently observed in recent studies on mesoscale and nanoscale free-standing single crystals of

On the nature of phase transitions in the tetragonal tungsten bronze GdK2Nb5O15 ceramics

{\text{BaTiO}}_{3}