I. Moussa
University of Monastir
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Publication
Featured researches published by I. Moussa.
Semiconductor Science and Technology | 2008
I. Moussa; H. Fitouri; Z. Chine; A. Rebey; B El Jani
We have investigated the effect of thermal annealing on GaAs0.963Bi0.037 layers grown by atmospheric pressure metalorganic vapour phase epitaxy. High resolution x-ray diffraction (HRXRD) patterns show high crystalline quality and remarkable stability against thermal annealing up to 700 °C. When the annealing temperature reaches 750 °C, the GaAs0.963Bi0.037 alloy is no longer stable, and the HRXRD pattern reveals the presence of other peaks. Atomic force microscopy images show a surface accumulation of Bi islands which disappear at 750 °C. The photoluminescence (PL) is clearly improved after annealing, but no shift of the PL peak was observed. The optimal annealing temperature is found to be ~700 °C.
Thin Solid Films | 2008
I. Moussa; H. Fitouri; A. Rebey; B. El Jani
Journal of Crystal Growth | 2006
H. Fitouri; I. Moussa; A. Rebey; A. Fouzri; B. El Jani
Journal of Crystal Growth | 2007
H. Fitouri; I. Moussa; A. Rebey; B. El Jani
Microelectronic Engineering | 2011
H. Fitouri; I. Moussa; A. Rebey; B. El Jani
Physica E-low-dimensional Systems & Nanostructures | 2009
H. Ben Naceur; I. Moussa; O. Tottereau; A. Rebey; B. El Jani
Physica E-low-dimensional Systems & Nanostructures | 2010
H. Ben Naceur; T. Mzoughi; I. Moussa; Lam H. Nguyen; A. Rebey; B. El Jani
Journal of Alloys and Compounds | 2012
T. Mzoughi; H. Fitouri; I. Moussa; A. Rebey; B. El Jani
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 2010
H. Ben Naceur; T. Mzoughi; I. Moussa; A. Rebey; B. El Jani
Surface & Coatings Technology | 2016
M. Bedoui; M.M. Habchi; I. Moussa; A. Rebey; B. El Jani
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