I. N. Arsent’ev

X-ray diffraction studies of heterostructures based on solid solutions AlxGa1 − xAsyP1 − y: Si

The growth of MOCVD-hydride epitaxial heterostructures based on ternary solid solutions AlxGa1−xAs heavily doped with phosphorus and silicon has been studied using high-resolution X-ray diffraction and X-ray microanalysis. The prepared epitaxial films are five-component solid solutions (AsxGa1−xAsyP1 − y)1 − zSiz.

Photoluminescence properties of heavily doped heterostructures based on (AlxGa1 − xAs)1 − ySiy solid solutions

It has been established that the photoluminescence spectra of heavily doped heterostructures based on AlxGa1 − xAs)1 − ySiy solid solutions exhibit quenching of the main exciton bands of AlxGa1 − xAs ternary solid solutions and appearance of other maxima. The quenching of the main exciton bands can be associated both with the DX-center formation and with the change in the character of the band structure of (AlxGa1 − xAs)1 − ySiy quaternary solid solutions.

Position of the Fermi level on an indium arsenide surface treated in sulfur vapor

The characteristic features of the formation kinetics of In2S3 layers on indium arsenide substrates by heterovalent substitution are studied. The activation energies of two steps in this process are separated and determined. The variation of the position of the Fermi level on an InAs surface during treatment in sulfur vapor is recorded by measuring the thermodynamic work function using the Kelvin probe method.

Structure and optical properties of thin Al2O3 films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates

Structural analysis and optical spectroscopy are used to study the properties of ultrathin Al2O3 films deposited in an ion-plasma sputtering installation. It is possible to demonstrate that the technological method used to deposit the films can yield amorphous, smooth, pore-free, and almost homogeneous films in which crystals of the α phase of aluminum oxide Al2O3 nucleate. The films transmit light extremely well in the IR (infrared), visible, and UV spectral ranges and are of potential importance for the development on their basis of antireflection coatings for mirrors of high-power semiconductor lasers based on III–V compounds.

Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/GaxIn1 − xAsyP1 − y/GaInP/GaAs(001) heterostructures

AbstractStructural and optical properties of two- and three-layer epitaxial heterostructures containing GaInP/GaxIn1 − xAsyP1 − y quaternary alloy layers were studied. Domain formation due to spinodal decomposition of the quaternary alloy was detected in three-layer heterostructures. As a result, an additional long-wavelength band appears in the photoluminescence spectra, and an additional doublet of the % MathType!MTEF!2!1!+- % feaagaart1ev2aaatCvAUfKttLearuqr1ngBPrgarmWu51MyVXgatC % vAUfeBSjuyZL2yd9gzLbvyNv2CaeHbd9wDYLwzYbItLDharyavP1wz % ZbItLDhis9wBH5garqqtubsr4rNCHbGeaGqiVu0Je9sqqrpepC0xbb % L8F4rqqrFfpeea0xe9Lq-Jc9vqaqpepm0xbba9pwe9Q8fs0-yqaqpe % pae9pg0FirpepeKkFr0xfr-xfr-xb9adbaqaaeGaciGaaiaabeqaam % aaeaqbaaGcbaaceaGaa83qaiaa-vhacqWGlbWsdaWgaaWcbaaccaGa % mair+f7aHnacas0gaaadbGaGejadaseIXaqmcWaGejilaWIamairik % daYaqajairaaWcbeaaaaa!480D!

Vegard’s law and superstructural phases in AlxGa1−xAs/GaAs(100) epitaxial heterostructures

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Semiconductor lasers with internal wavelength selection

line appears in X-ray diffraction patterns of the (006) line. The domain composition was determined on the basis of Vegard’s law and the Kouphal equation.

Structural and electrical characteristics of epitaxial InP layers on porous substrates and the parameters of related Au-Ti Schottky barriers

Spectral and light-current characteristics of separate-confinement lasers that are based on InAl-GaAs/InP and InGaAsP/InP alloys and emit in the wavelength range of 1.5–1.8 μm are studied at high excitation levels (up to 80 kA/cm2) in pulse operation (100 ns, 10 kHz). It is shown that the peak intensity in the stimulated-emission spectrum saturates as the pump current is increased. Further increase in the emitted power is attained owing to the emission-spectrum broadening to shorter wavelengths, similar to lasers on the GaAs substrates (λ = 1.04 μm). It is established experimentally that the broadening of the stimulated-emission spectrum to shorter wavelengths is caused by an increase in the threshold current and by an increase in the charge-carrier concentration in the active region. This concentration increases by a factor of 6–7 beyond the lasing threshold and can be as high as 1019 cm−3 in pulse operation. It is shown that saturation of the light-current characteristics in pulse operation takes place in the InAlGaAs/InP and InGaAsP/InP lasers as the pump current is increased. It is shown experimentally that there is a correlation between saturation of the light-current characteristic and an increase in the threshold current in the active region. An increase in the charge-carrier concentration and gradual filling of the active region and waveguide layers with electrons are observed as the pump current is increased; stimulated emission from the waveguide is observed at high pump currents.