I. Pollentier

Epitaxial lift-off and its applications

In this paper the authors will give an overview of the epitaxial lift-off (ELO) technique and its applications. This first part will describe the basic technology, which includes chemical lift-off, handling bonding, stress, alignment, etc. The second part will give an overview of device results obtained with ELO (LED and lasers on Si, MESFETs on InP, OEICs etc).

Fabrication of a GaAs-AlGaAs GRIN-SCH SQW laser diode on silicon by epitaxial lift-off

The epitaxial liftoff (ELO) of a GaAs-AlGaAs graded-index separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser diode and the subsequent transfer to a Si substrate are described. It is the first time that a layer structure containing Al/sub 0.60/Ga/sub 0.40/As has been lifted off, and the 5- mu m thin film was cleaved after ELO by a novel process, called wedge-induced facet cleaving (WFC). The pulsed operation performance of the ELO WFC laser was similar to that of conventionally processed GRIN-SCH SQW lasers. These results hold promise for integrating III-V short-cavity lasers on arbitrary substrates.<<ETX>>

Relaxed lattice-mismatched growth of III–V semiconductors

Abstract The fast increase in complexity of electronic and optoelectronic systems has created a need for high performance and multifunctional integrated circuits. One of the major restrictions is the lattice matching condition which severely limits the number of possible material combinations that can be used. This paper will review recent developments in the relaxed combination of III–V semiconductors with lattice mismatched substrates. Emphasis will be put on the problems encountered, the possible solutions and the device applications. The material combinations which will be discussed are: GaAs/AlGaAs on Si and InP substrates and InP/InGaAsP on Si and GaAs substrates.

GaAs/AlGaAs multiple-quantum-well vertical optical modulators on glass using the epitaxial lift-off technique

A GaAs/Al(0.30)Ga(0.70)As multiple-quantum-well vertical optical modulator has been grown on a GaAs substrate using the metal-organic vapor-phase epitaxy technique. This device was removed from the original substrate and placed on a glass carrier by means of epitaxial lift-off (ELO). Photocurrent measurements before and after the ELO show clear exciton absorption peaks and indicate the development of a Fabry-Perot cavity after ELO due to multiple reflections between the front and back of the ELO film. Transmission measurements show a maximal contrast ratio of 2.9 dB and an insertion loss of 2.8 dB at a wavelength of 831 nm.

Fabrication of high-radiance LEDs by epitaxial lift-off

Fully processed A1GaAs/GaAs LEDs were lifted off their GaAs substrates and grafted to various host substrates. Due to a metallic back reflector beneath the epitaxial structure, the LED output power was 2 to 3 times increased compared to LEDs still on a GaAs substrate. Output power and spectral responses were significantly influenced by the thermal properties of the host material.

Fabrication of long wavelength QEICs using GaAs on InP epitaxial lift-off technology

The integration of GaAs MESFET circuits with InP components using epitaxial lift-off (ELO) technology is discussed. Specific ELO problems (film-substrate isolation, alignment) and solutions as well as the various ways to integrate MESFETs on InP are described. The fabrication of a long wavelength OEIC, in which a GaAs ELO MESFET is integrated with an InP 2*2 buried waveguide optical switch (fully interconnected oil chip), is presented.<<ETX>>

Recent developments in relaxed and strained lattice mismatched heterostructures

Abstract The fabrication of novel optoelectronic devices and integrated circuits requires more ways of combining different materials. In this paper we will briefly review recent developments in the realization of relaxed and strained lattice mismatched heterostructures, with emphasis on GaAs and InP based material systems.

Novel optoelectronic devices and integrated circuits using epitaxial lift-off

Epitaxial Lift-Off is a technology where a thin epitaxial film is removed from its substrate an grafted to another substrate. The problems encountered during this process will be described and an overview will be given of the devices and integrated circuits realised with this technique.

GaAs on InP Based Optoelectronic Integrated Circuits for Optical Switching Networks

For the fabrication of long wavelength OptoElectronic Integrated Circuits (OEICs) there is a strong tendency towards the integration of InP/InGaAsP based optical and electronic components. The problems encountered due to the immature InPrelated technology for the fabrication of electronic devices are mainly due to the low Schottky barrier on InP materials. This makes it impossible to use the classical Metal Semiconductor Field Effect Transistor (MESFET) structures, which are well developed in the GaAs technology. Alternatively, more complex structures, such as Metal Insulator Semiconductor FETs (MISFET), Junction FETs (JFET) and Heterostructure Bipolar Transistors (HBT) are used.

Epitaxially lifted-off GaAs MESFETs on InP for optoelectronic integration

Epitaxial lift-off (ELO) is a technique by which epitaxially grown layers are lifted off their growth substrate and subsequently reattached to a new one. The preprocessing approach where ELO devices and circuits on the host are fabricated before transplantation offers the advantages that (a) fully optimized devices provided by a foundry service can be combined, (b) the devices can be tested prior to transplantation, and (c) the final result is a monolithic integration. The authors present results on the transplantation of foundry MESFETs to InP, and compare their behavior and the extracted parameters for a nonlinear MESFET-model before and after transfer.<<ETX>>