I.-S. Bae

Surface Plasma Treatment of Polyimide Film for Cu Metallization

Surface modification of polyimide films by oxygen/argon atmospheric pressure plasma (APP) was studied for copper metallization under several conditions, including plasma treatment time, gas ratio, and power of radio frequency (RF; 13.56MHz) plasma. The effects of APP treatments on the surface properties of polyimide (PI) films were investigated in terms of Fourier-transform infrared (FT-IR) spectroscopy, atomic force microscopy (AFM), and contact angle measurements. The results showed that the root-mean-squared (RMS) roughness of untreated PI films was 1.48nm, increasing to 2.08, 2.17, and 2.57nm after plasma treatment at 200, 400, and 600W, respectively. At the same time, the contact angle of untreated PI film was 73.0 � and reduced to 25.9, 20.3, and 17.3 � after plasma treatment at 200, 400, and 600W, respectively. The lowest contact angle and the maximum RMS roughness were 13 � and 8.50nm, respectively. Those values were achieved by oxygen/argon APP at an RF plasma power of 600W and with 50 repetitions. Also, X-ray diffraction (XRD) was used to examine the Cu surface structure in the Cu/PI system to indicate the quality of Cu foil. The highest Ið111Þ=Ið200Þ ratio was 1.89 at an RF power of 600W by oxygen/argon APP treatment. # 2011 The Japan Society of Applied Physics

Study of the Characteristics of Organic Thin Film Transistors with Plasma-Polymer Gate Dielectrics

The effects of gate dielectrics material in organic thin film transistors (OTFTs) were investigated. The gate dielectrics were deposited by plasma enhanced chemical vapor deposition (PECVD) with cyclohexane and tetraethylorthosilane (TEOS) respectively used as organic and inorganic precursors. The gate dielectrics (gate insulators) were deposited as either organic plasma-polymer or organic–inorganic hybrid plasma-polymer thin film by using cyclohexane or cyclohexane with TEOS, respectively. Additionally, hydrogen and argon were used as precursor bubbler gases. A polyimide (PI) substrate was used in the fabrication of pentacene OTFTs with a plasma-polymer gate insulator, an Au source–drain (S/D), and Cu gate electrodes. Different gate dielectrics were investigated. The as-grown plasma-polymer thin films were first analyzed using Fouriertransform infrared (FT-IR) spectroscopy. Also, they were analyzed by nano-indentation and capacitance measurements. The electrical properties, such as mobility and threshold voltage of the pentacene field-effect transistors with the plasma-polymer gate-dielectrics were investigated. Transistor with cyclohexane gate dielectric had a higher field-effect mobility, � FET ¼ 0:84cm 2 V � 1 s � 1 , and a smaller threshold voltage, VT ¼� 6:8V, than the transistor with the hybrid gate-dielectric. # 2011 The Japan Society of Applied Physics

Influence of deposition parameter on the structural and electrical properties of ZrO/sub 2/ thin films

Summary form only given, as follows. Thin films of ZrO/sub 2/ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters such as RF power magnitude O/sub 2/ flux and annealing temperature, etc on the film structure and electrical properties, a systematic study using I-V and C-V was mainly carried out in this study.

PACVD of plasma polymerized organic thin films and comparison of their electrochemical properties

Summary form only given, as follows. Summary form only given. Plasma polymerized organic thin films were deposited on Si(100), glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30-100 W AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and 1 x 10/sup -11/ A/cm/sup 2/. However, in the case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and 5 x 10/sup -12/ A/cm/sup 2/.