I. Yu. Borisenko

Simulating resistive switching in heterostructures based on oxide compounds

Simulations are used to study the influence of nonuniform electric field distribution at a heterojunction interface on the effect of bipolar resistive switching in oxide compounds. Computer models show that a conducting channel forms at the edge of a heterojunction area characterized by strong local increase in the electric field intensity. The computations are confirmed by the low temperature properties of metastable phases in heterojunctions based on high temperature superconductors.

Resistive switching effect in thin-film heterojunctions based on electron-doped Nd2 − xCexCuO4 − y superconductor

Thin-film heterojunctions Nd2 − xCexCuO4 − y/Ag were obtained. The bipolar effect of resistive switching in these heterostructures was detected and investigated. X-ray diffraction data indicate the presence of a second phase in thin films; along with the basic phase Nd2 − xCexCuO4 − y, it affects the behavior of the interface of investigated heterojunctions and leads to an alteration of the type of conductivity. The threshold frequency of alternating voltage at which the resistive switching effect is observed in heterojunctions was detected.

Explosive transition in amorphous microwire

An amorphous microwire in a glass shell offers a quick thermal response and can be rapidly heated to the crystallization point. When heated by a current pulse with a small amplitude and duration, the wire passes from the amorphous to microcrystalline state. The crystallization of the amorphous state may represent a slow or explosive process depending on the parameters of the pulse. In the latter case, the emission of electromagnetic waves (flash of light) and a sharp rise in the resistance are observed. The rate of propagation of the crystallization front in our experiments has been found to be about 1 m/s.

Resistive switching in mesoscopic heterostructures based on Nd 2– x Ce x CuO 4– y epitaxial films

Reversible and stable bistable resistive switching were observed in planar-type junctions Nd2–xCexCuO4–y/Nd2–xCexO1.75/Ag. It was shown that current transport in such junctions has a diode character with Schottky-like barriers in highly doped semiconductors. It was revealed that the key factor for switching is the presence of the second phase Nd2–xCexO1.75, deficient in oxygen, epitaxially germinated at the Nd2–xCexCuO4–y surface.

Frequency properties of heterostructures based on bismuth selenide upon bipolar resistive switching: Experiments and numerical simulation

The effect applied voltage frequency has on bipolar resistive switching in microcontact type heterostructures based on thin films and single crystals of bismuth selenide is studied both experimentally and via numerical simulation.

Numerical simulation of resistive switching in heterostructures based on anisotropic oxide compounds

Numerical simulation is used to study the effect anisotropic electrical conductivity and anisotropic oxygen diffusion have on the bipolar resistive switching effect in oxide compounds.

Resistive switching and diode properties of mesoscopic niobium oxide-based structures

The bipolar effects of resistive switching (BRS) in mesoscopic heterostrucures based on amorphous and crystalline niobium oxide films are considered. The BRS effect is more pronounced in the structures based on multiphase nanocrystalline niobium oxide films. It is shown that the threshold frequency for observing the BRS effect is of the order of 104 Hz. Switching is controlled via oxygen electrodiffusion to vacancies as the doping level of the contact area and the resistive properties of the heterocontact change.

Resistive switchings in perovskite compounds with memory effect: Study of metastable states of heterocontacts formed by a normal metal and doped manganite single crystal

It is shown that resistive switchings in heterocontacts formed by a doped manganite single crystal and a normal metal lead to the formation of a phase separated state in the manganite surface layer; the resistive and magnetic properties of this state can be significantly varied by changing the resistive switching parameters.

Thin-Film Aluminium Microstructure as a Hot-Electron Microwave Radiation Detector

We have found that the thin film aluminum structures shaped into a chain of micron sized islands connected by narrow isthmuses, can modify their electrical and structural properties under microwave radiation. As a result, at the temperature of 4.2 K the film structures turn into a kind of lateral periodic structure N-S-N, where N is for normal islands, S is for superconducting isthmuses. Current-voltage characteristics of the samples, as well as changes of these characteristics under low power radiation, have been studied over the temperature range from 1.3 to 10 K. The sensitivity of a structure as a microwave detector runs 105 V/W.