Ian E. Stewart

Metal Nanowire Networks: The Next Generation of Transparent Conductors

There is an ongoing drive to replace the most common transparent conductor, indium tin oxide (ITO), with a material that gives comparable performance, but can be coated from solution at speeds orders of magnitude faster than the sputtering processes used to deposit ITO. Metal nanowires are currently the only alternative to ITO that meets these requirements. This Progress Report summarizes recent advances toward understanding the relationship between the structure of metal nanowires, the electrical and optical properties of metal nanowires, and the properties of a network of metal nanowires. Using the structure-property relationship of metal nanowire networks as a roadmap, this Progress Report describes different synthetic strategies to produce metal nanowires with the desired properties. Practical aspects of processing metal nanowires into high-performance transparent conducting films are discussed, as well as the use of nanowire films in a variety of applications.

Synthesis and Purification of Silver Nanowires To Make Conducting Films with a Transmittance of 99

Metal nanowire (NW) networks have the highest performance of any solution-coatable alternative to ITO, but there is as yet no published process for producing NW films with optoelectronic performance that exceeds that of ITO. Here, we demonstrate a process for the synthesis and purification of Ag NWs that, when coated from an ink to create a transparent conducting film, exhibit properties that exceed that of ITO. The diameter, and thus optoelectronic performance, of Ag NWs produced by a polyol synthesis can be controlled by adjusting the concentration of bromide. Ag NWs with diameters of 20 nm and aspect ratios up to 2000 were obtained by adding 2.2 mM NaBr to a Ag NW synthesis, but these NWs were contaminated by nanoparticles. Selective precipitation was used to purify the NWs, resulting in a transmittance improvement as large as 4%. At 130.0 Ω sq(-1), the transmittance of the purified Ag NW film was 99.1%.

Solution-processed copper–nickel nanowire anodes for organic solar cells

This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%.

Copper Nanowire Networks with Transparent Oxide Shells That Prevent Oxidation without Reducing Transmittance

Transparent conducting films of solution-synthesized copper nanowires are an attractive alternative to indium tin oxide due to the relative abundance of Cu and the low cost of solution-phase nanowire coating processes. However, there has to date been no way to protect Cu nanowires with a solution-phase process that does not adversely affect the optoelectric performance of Cu nanowire films. This article reports that the electrodeposition of zinc, tin, or indium shells onto Cu nanowires, followed by oxidation of these shells, enables the protection of Cu nanowire films against oxidation without decreasing film performance.

How Copper Nanowires Grow and How To Control Their Properties

Scalable, solution-phase nanostructure synthesis has the promise to produce a wide variety of nanomaterials with novel properties at a cost that is low enough for these materials to be used to solve problems. For example, solution-synthesized metal nanowires are now being used to make low cost, flexible transparent electrodes in touch screens, organic light-emitting diodes (OLEDs), and solar cells. There has been a tremendous increase in the number of solution-phase syntheses that enable control over the assembly of atoms into nanowires in the last 15 years, but proposed mechanisms for nanowire formation are usually qualitative, and for many syntheses there is little consensus as to how nanowires form. It is often not clear what species is adding to a nanowire growing in solution or what mechanistic step limits its rate of growth. A deeper understanding of nanowire growth is important for efficiently directing the development of nanowire synthesis toward producing a wide variety of nanostructure morphologies for structure-property studies or producing precisely defined nanostructures for a specific application. This Account reviews our progress over the last five years toward understanding how copper nanowires form in solution, how to direct their growth into nanowires with dimensions ideally suited for use in transparent conducting films, and how to use copper nanowires as a template to grow core-shell nanowires. The key advance enabling a better understanding of copper nanowire growth is the first real-time visualization of nanowire growth in solution, enabling the acquisition of nanowire growth kinetics. By measuring the growth rate of individual nanowires as a function of concentration of the reactants and temperature, we show that a growing copper nanowire can be thought of as a microelectrode that is charged with electrons by hydrazine and grows through the diffusion-limited addition of Cu(OH)2(-). This deeper mechanistic understanding, coupled to an understanding of the structure-property relationship of nanowires in transparent conducting films, enabled the production of copper nanowires that can be coated from solution to make films with properties that rival the dominant transparent conductor, indium tin oxide. Finally, we show how copper nanowires can be coated with Zn, Sn, In, Ni, Co, Ag, Au, and Pt to protect them from oxidation or enable their use as transparent electrocatalysts.

Effect of Morphology on the Electrical Resistivity of Silver Nanostructure Films

The relatively high temperatures (>200 °C) required to sinter silver nanoparticle inks have limited the development of printed electronic devices on low-cost, heat-sensitive paper and plastic substrates. This article explores the change in morphology and resistivity that occurs upon heating thick films of silver nanowires (of two different lengths; Ag NWs), nanoparticles (Ag NPs), and microflakes (Ag MFs) at temperatures between 70 and 400 °C. After heating at 70 °C, films of long Ag NWs exhibited a resistivity of 1.8 × 10-5 Ω cm, 4000 times more conductive than films made from Ag NPs. This result indicates the resistivity of thick films of silver nanostructures is dominated by the contact resistance between particles before sintering. After sintering at 300 °C, the resistivity of short Ag NWs, long Ag NWs, and Ag NPs converge to a value of (2-3) × 10-5 Ω cm, while films of Ag MFs remain ∼10× less conductive (4.06 × 10-4 Ω cm). Thus, films of long Ag NW films heated at 70 °C are more conductive than Ag NP films sintered at 300 °C. Adding 10 wt % nanowires to a film of nanoparticles results in a 400-fold improvement in resistivity.

Ethylenediamine Promotes Cu Nanowire Growth by Inhibiting Oxidation of Cu(111)

The synthesis of metal nanostructures usually requires a capping agent that is generally thought to cause anisotropic growth by blocking the addition of atoms to specific crystal facets. This work uses a series of electrochemical measurements with a quartz crystal microbalance and single-crystal electrodes to elucidate the facet-selective chemistry occurring in the synthesis of Cu nanowires. Contrary to prevailing hypotheses, ethylenediamine, a so-called capping agent in the synthesis of Cu nanowires, causes anisotropic growth by increasing the rate of atomic addition to (111) facets at the end of a growing nanowire relative to (100) facets on the sides of a nanowire. Ethylenediamine increases the reduction rate of Cu(OH)2- on a Cu(111) surface relative to Cu(100) by selectively inhibiting the formation of Cu oxide on Cu(111). This work demonstrates how studying facet-selective electrochemistry can improve the understanding of the processes by which atoms assemble to form anisotropic metal nanostructures.

Production of Oxidation-Resistant Cu-Based Nanoparticles by Wire Explosion.

The low performance or high cost of commercially available conductive inks limits the advancement of printed electronics. This article studies the explosion of metal wires in aqueous solutions as a simple, low-cost, and environmentally friendly method to prepare metallic nanoparticles consisting of Cu and Cu alloys for use in affordable, highly conductive inks. Addition of 0.2 M ascorbic acid to an aqueous explosion medium prevented the formation of Cu2O shells around Cu nanoparticles, and allowed for the printing of conductive lines directly from these nanoparticles with no post-treatment. Cu alloy nanoparticles were generated from metal wires that were alloyed as purchased, or from two wires of different metals that were twisted together. Cu nanoparticles alloyed with 1% Sn, 5% Ag, 5% Ni and 30% Ni had electrical conductivities similar to Cu but unlike Cu, remained conductive after 24 hrs at 85 °C and 85% RH.