İbrahim Hüdai Taşdemir
Amasya University
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Featured researches published by İbrahim Hüdai Taşdemir.
IEEE Transactions on Electron Devices | 2014
A. Kaya; Huseyin Tecimer; Özkan Vural; İbrahim Hüdai Taşdemir; Semsettin Altindal
The energy dependence of the interface states (N<sub>ss</sub>) and relaxation time (τ) and capture cross section (σp) of N<sub>ss</sub> in (Au/PVC+TCNQ/p-Si) heterojunction were investigated using high-low frequency capacitance (C<sub>HF</sub>-C<sub>LF</sub>) and conductance method, which contains many capacitance/conductance [C/(G/ω)-V] plots. The C value of the heterojunction increases with decreasing frequency as almost exponentially due to the existence of N<sub>ss</sub> between metal and semiconductor. The N<sub>ss</sub> and τ values have been obtained in the (0.053- E<sub>v</sub>)-(0.785- E<sub>v</sub>)-eV energy range by considering the voltage-dependent surface potential obtained from the lowest measurable frequency C-V curve at 1 kHz. The magnitude of N<sub>ss</sub> ranges from 3.88×10<sup>12</sup> eV<sup>-1</sup>cm<sup>-2</sup> to 3.24×10<sup>12</sup> eV<sup>-1</sup>cm<sup>-2</sup>. In the same energy range, the value of τ ranges from 5.73×10<sup>-5</sup> to 1.58×10<sup>-4</sup> s and shows almost an exponential increase with increasing bias from the top of the valence band edge toward the midgap of semiconductor. The obtained N<sub>ss</sub> values from C<sub>HF</sub>-C<sub>LF</sub> and conductance methods are in good agreement with each other for the heterojunction. As a result, the mean value of N<sub>ss</sub> was found on the order of 10<sup>12</sup> eV<sup>-1</sup>cm<sup>-2</sup> and this value is very suitable for an electronic device.
Journal of Pharmaceutical Analysis | 2012
Derya Aşangil; İbrahim Hüdai Taşdemir; Esma Kılıç
Anodic behavior of aripiprazole (ARP) was studied using electrochemical methods. Charge transfer, diffusion and surface coverage coefficients of adsorbed molecules and the number of electrons transferred in electrode mechanisms were calculated for quasi-reversible and adsorption-controlled electrochemical oxidation of ARP at 1.15 V versus Ag/AgCl at pH 4.0 in Britton–Robinson buffer (BR) on glassy carbon electrode. Voltammetric methods for direct determination of ARP in pharmaceutical dosage forms and biological samples were developed. Linearity range is found as from 11.4 μM (5.11 mg/L) to 157 μM (70.41 mg/L) without stripping mode and it is found as from 0.221 μM (0.10 mg/L) to 13.6 μM (6.10 mg/L) with stripping mode. Limit of detection (LOD) was found to be 0.11 μM (0.05 mg/L) in stripping voltammetry. Methods were successfully applied to assay the drug in tablets, human serum and human urine with good recoveries between 95.0% and 104.6% with relative standard deviation less than 10%.
Environmental Toxicology and Chemistry | 2011
Harun Ciftci; Turgay Tunç; İbrahim Hüdai Taşdemir; Esen Ciftci
In the present study, an enrichment and separation method for the simultaneous determination of trace amounts of Cu and Zn in water samples was developed. Copper and Zn ions found in water matrix in trace amounts were preconcentrated on Duolite XAD 761 resin without using any chelating agent and determined by flame atomic absorption spectrometer (FAAS). Experimental parameters such as pH, concentration of metal ions, amount of resin, and sample volume for quantitative determination of Cu and Zn ions were optimized. The elution process was performed by using 5 ml of 2 mol/L HCl solution. The preconcentration factors for Cu and Zn were found to be 160 and 200, respectively. Under optimized conditions, limit of detection for Cu and Zn were 2.46 and 3.54 µg/L, respectively. The Langmuir adsorption model was applied to describe the equilibrium isotherm. The Langmuir monolayer adsorption capacity of resin was estimated as 31.2 and 17.7 mg/g for Cu and Zn, respectively. The proposed method was successfully applied to determine the Cu and Zn content of various water samples.
Journal of the Brazilian Chemical Society | 2013
Deniz Pamuk; İbrahim Hüdai Taşdemir; Abdulilah Ece; Esin Canel; Esma Kılıç
Electrochemical behavior of aliskiren (ALS) was studied via experimental electrochemical methods and theoretical calculations performed at B3LYP/6-31+G (d)//AM1. Cyclic voltammetry studies were carried out based on the adsorption-controlled reversible reduction at ca. -1.5 V on hanging mercury drop electrode (HMDE) and irreversible electrochemical oxidation of ALS at ca. 1.0 V on glassy carbon electrode (GCE), vs. Ag/AgCl, KCl (3.0 mol L-1), in Britton-Robinson buffer at pH 10 and 8, respectively. According to computational and experimental findings, ALS is expected to be oxidized irreversibly at benzylic position and reduced reversibly at amide carbonyl groups. Voltammetric methods with and without adsorptive stripping mode were developed and validated for quantification of ALS in different samples. Limits of detection and of quantification for ALS were 6.3 × 10-8 and 2.1 × 10-7 mol L-1 for differential pulse voltammetry on HMDE and 1.2 × 10-8 and 3.9 × 10-8 mol L-1 for square-wave cathodic adsorptive stripping voltammetry. The methods were successfully applied to assay the drug in tablets and human serum with good recoveries, between 91.7 and 102.3%, having relative standard deviation less than 10%.
Philosophical Magazine | 2016
İbrahim Hüdai Taşdemir; Özkan Vural; İlbilge Dökme
Abstract Electrical devices involve different types of diode in prospective electronics is of great importance. In this study, p-type Si surface was covered with thin film of TiO2 dispersion in H2O to construct p-Si/TiO2/Al Schottky barrier diode (D1) and the other one with TiO2 dispersion doped with zirconium to construct p-Si/TiO2-Zr/Al diode (D2) by drop-casting method in the same conditions. Electrical properties of as-prepared diodes and effect of zirconium as a dopant were investigated. Current–voltage (I–V) characteristics of these devices were measured at ambient conditions. Some parameters including ideality factor (n), barrier height (ΦB0), series resistance (Rs) and interface state density (Nss) were calculated from I–V behaviours of diodes. Structural comparisons were based on SEM and EDX measurements. Experimental results indicated that electrical parameters of p-Si/TiO2/Al Schottky device were influenced by the zirconium dopant in TiO2.
Collection of Czechoslovak Chemical Communications | 2011
İbrahim Hüdai Taşdemir; Orhan Çakirer; Nevin Erk; Esma Kılıç
Electroanalysis | 2010
İbrahim Hüdai Taşdemir; Mehmet Abdulkadir Akay; Nevin Erk; Esma Kılıç
Collection of Czechoslovak Chemical Communications | 2010
Funda Öztürk; İbrahim Hüdai Taşdemir; Zehra Durmus; Esma Kılıç
Journal of Food and Drug Analysis | 2014
İbrahim Hüdai Taşdemir
Journal of Electroanalytical Chemistry | 2012
Katarzyna Tyszczuk-Rotko; İbrahim Hüdai Taşdemir