Igor Kogut

Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors

The low temperature studies of SOI-structures have been carried out in a temperature range of 4.2÷300K at magnetic fields up to 14T. The samples with initial boron concentration of about 2.41018сm-3 have been investigated. The results of the studies of SOI-structure conductance at low temperatures in the range of hopping conductance and a possibility to use this material in sensors are analyzed.

High Sensitive Active MOS Photo Detector on the Local 3D SOI-Structure

A structure for single photon detection is analyzed. A special shape of photon detector electrodes on local 3D SOI structure is proposed. The structure of photon detector with a vertical local SOI MOS transistor is designed.

Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields

The effects of high energy electron irradiation and high magnetic fields (up to 14 T) on the electrical characteristics of recrystallized p-type polysilicon-on-insulator layers were studied. The aim of the paper is to obtain the material suitable to create the sensors operating in harsh conditions.

The Device-Technological Simulation of Local 3D SOI-Structures

This paper presents the device-technological simulation of local 3D SOI structures. These structures are created by use microcavities under surface of silicon wafer. Is shown that proposed microcavities could be use as a constructive material for CMOS transistor array on the bulk silicon and 3D SOI-CMOS transistor array, as well as the sensitive elements and their combinations. Such structures allow creation and monolithic integration the CMOS, SOI-CMOS circuits and sensitive elements for IC and SoC.

Polysilicon in SOI-structures as a material for sensor application in the wide temperature range

This paper is devoted to the development and creation of sensor elements technology based on the silicon-on-insulator (SOI) structures. A comprehensive study of electrical properties of silicon-on-insulator structures over a wide temperature range (4,2-300K) is fulfilled. A highly sensitive strain, temperature, acceleration sensors are proposed, which is important for modern cryoelectronics, cryoenergetics, sensor micro- and nanoelectronics.

Architecture development and elements simulation of analytical microsystem-on-chip with “silicon-on-insulator” structures

This paper is devoted to the architecture development, layout design, device-technological and circuit-topological computer simulation of elements based on single-level and multilevel silicon-on-insulator (SOI) structures, which can be the basis for creating components of analytical and sensory microsystem-on-chip. The architecture and layouts of analytical microsystem-on-chip were developed. Optimized gate array basic cell was developed and library elements on that base are designed. Three-dimensional architectures “silicon-on-insulator” under the surface of the silicon wafer are proposed and simulated. Electrical and time characteristics of individual elemens of microsysem-on chip are defined by schematic simulation.

Electron irradiation effect on resistance of SOI structures

The radiation resistance of silicon-on-insulator structures has been studied at low temperatures. High-energy electron irradiation (10 MeV, 1017 cm-2) caused a substantial change of resistance of polycrystalline silicon in SOI. Physical reasons for the observed changes have been discussed. The radiation-induced impurity segregation is likely responsible for the appearance of percolation type charge carrier transport in poly-Si layer of SOI at cryogenic temperatures. The measuring properties of developed actuators remained almost insensible to the action of radiation with lower electron fluences (~1016 cm-2).

3D SOI Elements for System-on-Chip Applications

Base technology of local 3D SOI-structures formation has been proposed. Using this technology the electrical characteristics were developed and simulated of following original device elements for the microsystem applications: standard and matrix SOI CMOS-transistors with 3D gates, switching elements on Schottky diodes, contact electrodes with 3D surface, elements for highly sensitive integral accelerometers with registration of a field emission current, hermetical microcavities and microchannels under the surface of a SOI-substrate, field emission silicon microcathodes.

Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields

Moderately and heavily boron doped polysilicon-on-insulator layers before and after laser recrystallization were studied at cryogenic temperatures in high magnetic fields up to 14 T. Piezoresistance and magnetoresistance of poly-Si layers with different carrier concentration were investigated. It was shown that laser-recrystallized poly-Si layers could be used to develop piezoresistive sensors, operating at cryogenic temperatures and high magnetic fields.