Il-hwan Kim

Knowledge management and process innovation: the knowledge transformation path in Samsung SDI

Explores the connection between knowledge management (KM) and process innovation (PI). Although these are popular themes in the literature on management innovation, there is not much discussions of these issues. On the one hand, KM has been treated as a managerial fad that is mainly focused on knowledge generation, dissemination, and utilization. Moreover, the advocates of KM seem to be concerned with building knowledge management systems (KMS). On the other hand, PI is regarded as an efficiency‐oriented process redesign and re‐engineering (or BPR), which seems to be nothing to do with KM. However, the case study of Samsung SDI shows that in the real world KM is deeply linked with PI. For illustrating the KM strategy of Samsung SDI, uses the term “PI‐based KM”. Sheds light on two points: the features of process knowledge can be studied in the sense that knowledge associated with process is dubbed “process knowledge”; and socio‐cultural features of KM should be illustrated in terms of knowledge transformation path in the information space.

The use of computational inspection to identify process window limiting hotspots and predict sub-15nm defects with high capture rate

As critical dimensions for advanced two dimensional (2D) DUV patterning continue to shrink, the exact process window becomes increasingly difficult to determine. The defect size criteria shrink with the patterning critical dimensions and are well below the resolution of current optical inspection tools. As a result, it is more challenging for traditional bright field inspection tools to accurately discover the hotspots that define the process window. In this study, we use a novel computational inspection method to identify the depth-of-focus limiting features of a 10 nm node mask with 2D metal structures (single exposure) and compare the results to those obtained with a traditional process windows qualification (PWQ) method based on utilizing a focus modulated wafer and bright field inspection (BFI) to detect hotspot defects. The method is extended to litho-etch litho-etch (LELE) on a different test vehicle to show that overlay related bridging hotspots also can be identified.

Modyfying device structure for high emission current for x-ray tube application from triode-type carbon nanotube cathode

The triode-typed field emission (FE) devices using carbon nanotube (CNT) emitters for the x-ray application were fabricated. For the stability of the device, the leakage current between cathode and gate, and the emission current to the anode electrode should be controlled. We realized that the thickness of insulating layer-gap distance between cathode and gate- and the space between the gate electrodes-electron path from cathode and anode- should be controlled for the ratio of the current from cathode to anode (Ia) to the current from cathode to gate (Ig). The ratio of Ia to Ig can be represented the device efficiency. The rectangular-mesh electrode and screen printed insulating layer were controlled for Ia/Ig. When the size of gate hole was the 50 by 700 um - the electrode size is 25 by 700 um - and the thickness of insulator layer was 65 μm, the maximum ratio of Ia/(Ia+Ig) was 0.63.

A carbon nanotube paste with high emission currnet for the X-ray tube

Field emission properties of CNTs(carbon nanotubes) have been investigated in the various field, such as flat panel display and x-ray sources. Especially, the x-ray tube which fabricated using the CNTs can be operated with low power consumption compare with filament-based x-ray tubes. The cold cathode - CNTs- can be operated at the lower voltage and the electron which coming out from the CNTs can be controlled easilly by focus electrode. And for high emission current, the device should be stable at the high operate voltage. The gate electrode-mesh-type electrode- can be layered by using glass frit and firing process. At this point, the mesh structure can be controlled for the higher adhesion force which is for the emission stability at the high voltage. The glass frit could be act effectively between mesh electrode and insulating layer because of the designed mesh structure.