In Seob Park

Aggregation-Induced Delayed Fluorescence Based on Donor/Acceptor-Tethered Janus Carborane Triads: Unique Photophysical Properties of Nondoped OLEDs.

Luminescent materials consisting of boron clusters, such as carboranes, have attracted immense interest in recent years. In this study, luminescent organic-inorganic conjugated systems based on o-carboranes directly bonded to electron-donating and electron-accepting π-conjugated units were elaborated as novel optoelectronic materials. These o-carborane derivatives simultaneously possessed aggregation-induced emission (AIE) and thermally activated delayed fluorescence (TADF) capabilities, and showed strong yellow-to-red emissions with high photoluminescence quantum efficiencies of up to 97 % in their aggregated states or in solid neat films. Organic light-emitting diodes utilizing these o-carborane derivatives as a nondoped emission layer exhibited maximum external electroluminescence quantum efficiencies as high as 11 %, originating from TADF.

High-performance blue organic light-emitting diodes with 20% external electroluminescence quantum efficiency based on pyrimidine-containing thermally activated delayed fluorescence emitters

We report here high-performance pure blue thermally activated delayed fluorescence (TADF) molecules based on a central pyrimidine acceptor (A) core with peripheral diphenylacridan donor (D) units. A design motif of highly twisted D–A–D architectures having a small singlet–triplet energy splitting allows for the production of efficient pure blue TADF with high quantum efficiencies exceeding 90%. An OLED based on the blue pyrimidine-based TADF emitter exhibits a high maximum external quantum efficiency of 20.8% and a high power efficiency of 31.5 lm W−1.

Cyclohexane-Coupled Bipolar Host Materials with high Triplet Energies for Organic Light-Emitting Diodes Based on Thermally Activated Delayed Fluorescence

Thermally activated delayed fluorescence-based organic light-emitting diodes (TADF-OLEDs) have recently attracted tremendous research interest as next-generation optoelectronic devices. However, there are a limited number of host materials with an appropriately high lowest-excited triplet energy (ET) and bipolar charge transport properties for high-efficiency TADF-OLEDs. Moreover, these host materials should have high thermal and morphological stabilities. In this study, we develop novel bipolar host materials consisting of an electron-donating 9-phenylcarbazole unit and an electron-accepting triphenylphosphine oxide, triphenylphosphine sulfide, or 2,4,6-triphenyl-1,3,5-triazine unit linked by a nonconjugated cyclohexane core. These bipolar host materials possess high glass-transition temperatures of over 100 °C and high ET values of approximately 3.0 eV. TADF-OLEDs employing these bipolar host materials could achieve high external electroluminescence quantum efficiencies of up to 21.7% together with reduced efficiency roll-off characteristics, because of expansion of the charge-recombination zone within the emission layer arising from the bipolar charge transport ability of these host materials.

Solution-processed organic thermoelectric materials exhibiting doping-concentration-dependent polarity

Recent progress in conducting polymer-based organic thermoelectric generators (OTEGs) has resulted in high performance due to high Seebeck coefficient, high electrical conductivity (σ), and low thermal conductivity obtained by chemically controlling the materialss redox levels. In addition to improving the properties of individual OTEGs to obtain high performance, the development of solution processes for the fabrication of OTEG modules is necessary to realize large thermoelectric voltage and low-cost mass production. However, the scarcity of good candidates for soluble organic n-type materials limits the use of π-leg module structures consisting of complementary elements of p- and n-type materials because of unbalanced transport coefficients that lead to power losses. In particular, the extremely low σ of n-type materials compared with that of p-type materials is a serious challenge. In this study, poly(pyridinium phenylene) (P(PymPh)) was tested as an n-type semiconductor in solution-processed OTEGs, and the carrier density was controlled by a solution-based chemical doping process using the dopant sodium naphthalenide, a well-known reductant. The electronic structures and doping mechanism of P(PymPh) were explored based on the changes in UV-Vis-IR absorption, ultraviolet photoelectron, and X-ray photoelectron spectra. By controlling the dopant concentration, we demonstrate a maximum n-type power factor of 0.81 μW m-1 K-2 with high σ, and at higher doping concentrations, a switch from n-type to p-type TE operation. This is one of the first cases of a switch in polarity just by increasing the concentration of the reductant and may open a new route for simplified fabrication of complementary organic layers.