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Dive into the research topics where Ingo Salzmann is active.

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Featured researches published by Ingo Salzmann.


Nature Materials | 2008

Orientation-dependent ionization energies and interface dipoles in ordered molecular assemblies

Steffen Duhm; Georg Heimel; Ingo Salzmann; Hendrik Glowatzki; R.L. Johnson; A. Vollmer; Jürgen P. Rabe; Norbert Koch

Although an isolated individual molecule clearly has only one ionization potential, multiple values are found for molecules in ordered assemblies. Photoelectron spectroscopy of archetypical pi-conjugated organic compounds on metal substrates combined with first-principles calculations and electrostatic modelling reveal the existence of a surface dipole built into molecular layers. Conceptually different from the surface dipole at metal surfaces, its origin lies in details of the molecular electronic structure and its magnitude depends on the orientation of molecules relative to the surface of an ordered assembly. Suitable pre-patterning of substrates to induce specific molecular orientations in subsequently grown films thus permits adjusting the ionization potential of one molecular species over up to 0.6 eV via control over monolayer morphology. In addition to providing in-depth understanding of this phenomenon, our study offers design guidelines for improved organic-organic heterojunctions, hole- or electron-blocking layers and reduced barriers for charge-carrier injection in organic electronic devices.


Nature Communications | 2013

Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors

Guanghao Lu; James C. Blakesley; Scott Himmelberger; Patrick Pingel; Johannes Frisch; Ingo Lieberwirth; Ingo Salzmann; Martin Oehzelt; Riccardo Di Pietro; Alberto Salleo; Norbert Koch; Dieter Neher

Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.


Nature Chemistry | 2013

Charged and metallic molecular monolayers through surface-induced aromatic stabilization

Georg Heimel; Steffen Duhm; Ingo Salzmann; Alexander Gerlach; A. Strozecka; Jens Niederhausen; Christoph Bürker; Takuya Hosokai; I. Fernández-Torrente; G. Schulze; Stefanie Winkler; Andreas Wilke; Raphael Schlesinger; Johannes Frisch; Benjamin Bröker; A. Vollmer; B. Detlefs; Jens Pflaum; Satoshi Kera; Katharina J. Franke; Nobuo Ueno; J. I. Pascual; Frank Schreiber; Norbert Koch

Large π-conjugated molecules, when in contact with a metal surface, usually retain a finite electronic gap and, in this sense, stay semiconducting. In some cases, however, the metallic character of the underlying substrate is seen to extend onto the first molecular layer. Here, we develop a chemical rationale for this intriguing phenomenon. In many reported instances, we find that the conjugation length of the organic semiconductors increases significantly through the bonding of specific substituents to the metal surface and through the concomitant rehybridization of the entire backbone structure. The molecules at the interface are thus converted into different chemical species with a strongly reduced electronic gap. This mechanism of surface-induced aromatic stabilization helps molecules to overcome competing phenomena that tend to keep the metal Fermi level between their frontier orbitals. Our findings aid in the design of stable precursors for metallic molecular monolayers, and thus enable new routes for the chemical engineering of metal surfaces.


Journal of the American Chemical Society | 2008

Tuning the ionization energy of organic semiconductor films: the role of intramolecular polar bonds.

Ingo Salzmann; Steffen Duhm; Georg Heimel; Martin Oehzelt; Rolf Kniprath; R.L. Johnson; Jürgen P. Rabe; Norbert Koch

For the prototypical conjugated organic molecules pentacene and perfluoropentacene, we demonstrate that the surface termination of ordered organic thin films with intramolecular polar bonds (e.g., -H versus -F) can be used to tune the ionization energy. The collective electrostatics of these oriented bonds also explains the pronounced orientation dependence of the ionization energy. Furthermore, mixing of differently terminated molecules on a molecular length scale allows continuously tuning the ionization energy of thin organic films between the limiting values of the two pure materials. Our study shows that surface engineering of organic semiconductors via adjusting the polarity of intramolecular bonds represents a generally viable alternative to the surface modification of substrates to control the energetics at organic/(in)organic interfaces.


Accounts of Chemical Research | 2016

Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules

Ingo Salzmann; Georg Heimel; Martin Oehzelt; Stefanie Winkler; Norbert Koch

Todays information society depends on our ability to controllably dope inorganic semiconductors, such as silicon, thereby tuning their electrical properties to application-specific demands. For optoelectronic devices, organic semiconductors, that is, conjugated polymers and molecules, have emerged as superior alternative owing to the ease of tuning their optical gap through chemical variability and their potential for low-cost, large-area processing on flexible substrates. There, the potential of molecular electrical doping for improving the performance of, for example, organic light-emitting devices or organic solar cells has only recently been established. The doping efficiency, however, remains conspicuously low, highlighting the fact that the underlying mechanisms of molecular doping in organic semiconductors are only little understood compared with their inorganic counterparts. Here, we review the broad range of phenomena observed upon molecularly doping organic semiconductors and identify two distinctly different scenarios: the pairwise formation of both organic semiconductor and dopant ions on one hand and the emergence of ground state charge transfer complexes between organic semiconductor and dopant through supramolecular hybridization of their respective frontier molecular orbitals on the other hand. Evidence for the occurrence of these two scenarios is subsequently discussed on the basis of the characteristic and strikingly different signatures of the individual species involved in the respective doping processes in a variety of spectroscopic techniques. The critical importance of a statistical view of doping, rather than a bimolecular picture, is then highlighted by employing numerical simulations, which reveal one of the main differences between inorganic and organic semiconductors to be their respective density of electronic states and the doping induced changes thereof. Engineering the density of states of doped organic semiconductors, the Fermi-Dirac occupation of which ultimately determines the doping efficiency, thus emerges as key challenge. As a first step, the formation of charge transfer complexes is identified as being detrimental to the doping efficiency, which suggests sterically shielding the functional core of dopant molecules as an additional design rule to complement the requirement of low ionization energies or high electron affinities in efficient n-type or p-type dopants, respectively. In an extended outlook, we finally argue that, to fully meet this challenge, an improved understanding is required of just how the admixture of dopant molecules to organic semiconductors does affect the density of states: compared with their inorganic counterparts, traps for charge carriers are omnipresent in organic semiconductors due to structural and chemical imperfections, and Coulomb attraction between ionized dopants and free charge carriers is typically stronger in organic semiconductors owing to their lower dielectric constant. Nevertheless, encouraging progress is being made toward developing a unifying picture that captures the entire range of doping induced phenomena, from ion-pair to complex formation, in both conjugated polymers and molecules. Once completed, such a picture will provide viable guidelines for synthetic and supramolecular chemistry that will enable further technological advances in organic and hybrid organic/inorganic devices.


Journal of Applied Physics | 2008

Structural and electronic properties of pentacene-fullerene heterojunctions

Ingo Salzmann; Steffen Duhm; Ricarda Opitz; R.L. Johnson; Jürgen P. Rabe; Norbert Koch

In this study the performance differences of layered and bulk-heterojunction based organic solar cells composed of the prototypical p- and n-type organic semiconductors pentacene (PEN) and fullerene (C60) are correlated with the physical properties of the heterostructures. The electronic structure of layered and codeposited thin PEN and C60 films on the conducting polymer substrate poly(ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was investigated with ultraviolet photoelectron spectroscopy. Layered structures of C60 on PEN precovered PEDOT:PSS exhibited an offset of the highest occupied molecular orbital (HOMO) levels of 1.45 eV. In contrast, codeposited films of PEN and C60 showed a reduced HOMO-level offset of 0.85 eV, which increased to 1.45 eV by precoverage of the substrate with a thin PEN layer. In this case, the PEN-HOMO level was Fermi-level pinned at 0.35 eV binding energy and charge transfer between PEN and PEDOT:PSS decreased the vacuum level by 0.75 eV. In addition, the morpholo...


Angewandte Chemie | 2013

Doping of organic semiconductors : Impact of dopant strength and electronic coupling

Henry Méndez; Georg Heimel; Andreas Opitz; Katrein Sauer; Patrick Barkowski; Martin Oehzelt; Junshi Soeda; Toshihiro Okamoto; Jun Takeya; Jean-Baptiste Arlin; Jean-Yves Balandier; Yves Geerts; Norbert Koch; Ingo Salzmann

Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.


Nature Communications | 2015

Charge-transfer crystallites as molecular electrical dopants

Henry Méndez; Georg Heimel; Stefanie Winkler; Johannes Frisch; Andreas Opitz; Katrein Sauer; Berthold Wegner; Martin Oehzelt; Christian Röthel; Steffen Duhm; Daniel M. Többens; Norbert Koch; Ingo Salzmann

Ground-state integer charge transfer is commonly regarded as the basic mechanism of molecular electrical doping in both, conjugated polymers and oligomers. Here, we demonstrate that fundamentally different processes can occur in the two types of organic semiconductors instead. Using complementary experimental techniques supported by theory, we contrast a polythiophene, where molecular p-doping leads to integer charge transfer reportedly localized to one quaterthiophene backbone segment, to the quaterthiophene oligomer itself. Despite a comparable relative increase in conductivity, we observe only partial charge transfer for the latter. In contrast to the parent polymer, pronounced intermolecular frontier-orbital hybridization of oligomer and dopant in 1:1 mixed-stack co-crystallites leads to the emergence of empty electronic states within the energy gap of the surrounding quaterthiophene matrix. It is their Fermi–Dirac occupation that yields mobile charge carriers and, therefore, the co-crystallites—rather than individual acceptor molecules—should be regarded as the dopants in such systems.


ACS Nano | 2012

Epitaxial growth of π-stacked perfluoropentacene on graphene-coated quartz.

Ingo Salzmann; Armin Moser; Martin Oehzelt; Tobias Breuer; Xinliang Feng; Zhen-Yu Juang; Dmitrii Nabok; Raffaele Guido Della Valle; Steffen Duhm; Georg Heimel; Aldo Brillante; Elisabetta Venuti; Ivano Bilotti; Christos Christodoulou; Johannes Frisch; Peter Puschnig; Claudia Draxl; Gregor Witte; Klaus Müllen; Norbert Koch

Chemical-vapor-deposited large-area graphene is employed as the coating of transparent substrates for the growth of the prototypical organic n-type semiconductor perfluoropentacene (PFP). The graphene coating is found to cause face-on growth of PFP in a yet unknown substrate-mediated polymorph, which is solved by combining grazing-incidence X-ray diffraction with theoretical structure modeling. In contrast to the otherwise common herringbone arrangement of PFP in single crystals and “standing” films, we report a π-stacked arrangement of coplanar molecules in “flat-lying” films, which exhibit an exceedingly low π-stacking distance of only 3.07 Å, giving rise to significant electronic band dispersion along the π-stacking direction, as evidenced by ultraviolet photoelectron spectroscopy. Our study underlines the high potential of graphene for use as a transparent electrode in (opto-)electronic applications, where optimized vertical transport through flat-lying conjugated organic molecules is desired.


Langmuir | 2008

Structural Order in Perfluoropentacene Thin Films and Heterostructures with Pentacene

Ingo Salzmann; Steffen Duhm; Georg Heimel; Jürgen P. Rabe; Norbert Koch; Martin Oehzelt; Youichi Sakamoto; Toshiyasu Suzuki

Synchrotron x-ray diffraction reciprocal space mapping was performed on perfluoropentacene (PFP) thin films on SiO2 in order to determine the crystal structure of a novel, substrate-induced thin film phase to be monoclinic with unit cell parameters of a = 15.76 +/- 0.02 A, b = 4.51 +/- 0.02 A, c = 11.48 +/- 0.02 A, and beta = 90.4 +/- 0.1 degrees . Moreover, layered and co-deposited heterostructures of PFP and pentacene (P) were investigated by specular and grazing-incidence x-ray diffraction, atomic force microscopy, and Fourier-transform infrared spectroscopy. For a ca. three-monolayers-thick PFP film grown on a P underlayer, slightly increased lattice spacing was found. In contrast, co-deposited P/PFP films form a new mixed-crystal structure with no detectable degree of phase separation. These results highlight the structural complexity of these technically relevant molecular heterojunctions for use in organic electronics.

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Norbert Koch

Humboldt University of Berlin

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Martin Oehzelt

Helmholtz-Zentrum Berlin

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Georg Heimel

Humboldt University of Berlin

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Jürgen P. Rabe

Humboldt University of Berlin

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Christian Röthel

Graz University of Technology

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A. Vollmer

Helmholtz-Zentrum Berlin

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Clemens Simbrunner

Johannes Kepler University of Linz

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Johannes Frisch

Humboldt University of Berlin

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