Irene A. Goldthorpe

Failure of silver nanowire transparent electrodes under current flow.

Silver nanowire transparent electrodes have received much attention as a replacement for indium tin oxide, particularly in organic solar cells. In this paper, we show that when silver nanowire electrodes conduct current at levels encountered in organic solar cells, the electrodes can fail in as little as 2 days. Electrode failure is caused by Joule heating which causes the nanowires to breakup and thus create an electrical discontinuity in the nanowire film. More heat is created, and thus failure occurs sooner, in more resistive electrodes and at higher current densities. Suggestions to improve the stability of silver nanowire electrodes are given.

Synthesis and strain relaxation of Ge-core/Si-shell nanowire arrays.

Analogous to planar heteroepitaxy, misfit dislocation formation and stress-driven surface roughening can relax coherency strains in misfitting core-shell nanowires. The effects of coaxial dimensions on strain relaxation in aligned arrays of Ge-core/Si-shell nanowires are analyzed quantitatively by transmission electron microscopy and synchrotron X-ray diffraction. Relating these results to reported continuum elasticity models for coaxial nanowire heterostructures provides valuable insights into the observed interplay of roughening and dislocation-mediated strain relaxation.

High-performance flexible organic light-emitting diodes using embedded silver network transparent electrodes.

Because of their mechanical flexibility, organic light-emitting diodes (OLEDs) hold great promise as a leading technology for display and lighting applications in wearable electronics. The development of flexible OLEDs requires high-quality transparent conductive electrodes with superior bendability and roll-to-roll manufacturing compatibility to replace indium tin oxide (ITO) anodes. Here, we present a flexible transparent conductor on plastic with embedded silver networks which is used to achieve flexible, highly power-efficient large-area green and white OLEDs. By combining an improved outcoupling structure for simultaneously extracting light in waveguide and substrate modes and reducing the surface plasmonic losses, flexible white OLEDs exhibit a power efficiency of 106 lm W(-1) at 1000 cd m(-2) with angular color stability, which is significantly higher than all other reports of flexible white OLEDs. These results represent an exciting step toward the realization of ITO-free, high-efficiency OLEDs for use in a wide variety of high-performance flexible applications.

Inhibiting Strain-Induced Surface Roughening: Dislocation-Free Ge/Si and Ge/SiGe Core-Shell Nanowires

Elastic strain is a critical factor in engineering the electronic behavior of core-shell semiconductor nanowires and provides the driving force for undesirable surface roughening and defect formation. We demonstrate two independent strategies, chlorine surface passivation and growth of nanowires with low-energy sidewall facets, to avoid strain-induced surface roughening that promotes dislocation nucleation in group IV core-shell nanowires. Metastably strained, dislocation-free, core-shell nanowires are obtained, and axial strains are measured and compared to elasticity model predictions.

Metastability of Au−Ge Liquid Nanocatalysts: Ge Vapor–Liquid–Solid Nanowire Growth Far below the Bulk Eutectic Temperature

The vapor-liquid-solid mechanism of nanowire (NW) growth requires the presence of a liquid at one end of the wire; however, Au-catalyzed Ge nanowire growth by chemical vapor deposition can occur at approximately 100 degrees C below the bulk Au-Ge eutectic. In this paper, we investigate deep sub-eutectic stability of liquid Au-Ge catalysts on Ge NWs quantitatively, both theoretically and experimentally. We construct a binary Au-Ge phase diagram that is valid at the nanoscale and show that equilibrium arguments, based on capillarity, are inconsistent with stabilization of Au-Ge liquid at deep sub-eutectic temperatures, similar to those used in Ge NW growth. Hot-stage electron microscopy and X-ray diffraction are used to test the predictions of nanoscale phase equilibria. In addition to Ge supersaturation of the Au-Ge liquid droplet, which has recently been invoked as an explanation for deep sub-eutectic Ge NW growth, we find evidence of a substantial kinetic barrier to Au solidification during cooling below the nanoscale Au-Ge eutectic temperature.

Electrically tunable materials for microwave applications

Microwave devices based on tunable materials are of vigorous current interest. Typical applications include phase shifters, antenna beam steering, filters, voltage controlled oscillators, matching networks, and tunable power splitters. The objective of this review is to assist in the material selection process for various applications in the microwave regime considering response time, required level of tunability, operating temperature, and loss tangent. The performance of a variety of material types are compared, including ferroelectric ceramics, polymers, and liquid crystals. Particular attention is given to ferroelectric materials as they are the most promising candidates when response time, dielectric loss, and tunability are important. However, polymers and liquid crystals are emerging as potential candidates for a number of new applications, offering mechanical flexibility, lower weight, and lower tuning voltages.

Silver nanowire coated threads for electrically conductive textiles

The emerging area of e-textiles requires electrically conductive threads. We demonstrate that nylon, polyester, and cotton threads can be made conductive by coating their surfaces with random networks of solution-synthesized silver nanowires. A resistance per unit length of 0.8 Ω cm−1 was achieved and can be varied through the density of the nanowire coating. Because the nanowires are 35 nm in diameter, and the mesh structure does not cover the entire surface like a thin-film, less metal is used compared to conventional silver-coated conductive threads. This leads to a much lower weight and mechanically flexible coating. The functionality of the thread as a heater and the fabrication of stretchable conductive thread are also demonstrated.

Gold‐Catalyzed Vapor–Liquid–Solid Germanium‐Nanowire Nucleation on Porous Silicon

Nanoporous Si(111) substrates are used to study the effects of Au catalyst coarsening on the nucleation of vapor-liquid-solid-synthesized epitaxial Ge nanowires (NWs) at temperatures less than 400 degrees C. Porous Si substrates, with greater effective interparticle separations for Au surface diffusion than nonporous Si, inhibit catalyst coarsening and agglomeration prior to NW nucleation. This greatly reduces the variation in wire diameter and length and increases the yield compared to nucleation on identically prepared nonporous Si substrates.

Hexagonal Close-Packed Structure of Au Nanocatalysts Solidified after Ge Nanowire Vapor−Liquid−Solid Growth

We report that approximately 10% of the Au catalysts that crystallize at the tips of Ge nanowires following growth have the close-packed hexagonal crystal structure rather than the equilibrium face-centered-cubic structure. Transmission electron microscopy results using aberration-corrected imaging, and diffraction and compositional analyses, confirm the hexagonal phase in these 40-50 nm particles. Reports of hexagonal close packing in Au, even in nanoparticle form, are rare, and the observations suggest metastable pathways for the crystallization process. These results bring new considerations to the stabilization of the liquid eutectic alloy at low temperatures that allows for vapor-liquid-solid growth of high quality, epitaxial Ge nanowires below the eutectic temperature.

Group IV semiconductor nanowire arrays: epitaxy in different contexts

Epitaxy can be used to direct nanowire deposition and to influence the crystallographic orientation of nanowires during their nucleation and growth via the vapor–liquid–solid mechanism. We have investigated rapid thermal chemical vapor deposition of epitaxial Ge nanowires and have used it to separately study nanowire nucleation and growth. This work has provided important insights into deep-subeutectic Ge nanowire growth using Au catalyst particles. Germanium nanowires have also been studied as the cores in epitaxial Ge core/Si shell nanowires. We have studied the conditions under which strain-driven surface roughening and dislocations formation occur in these coaxial nanowire heterostructures. Our results indicate that suppression of Si shell surface roughening can lead to fully strained, coherent core/shell nanowires. Recently, we have used vertical arrays of Ge 1 1 1 nanowires grown at low temperatures on Si substrates to seed liquid-phase epitaxy of large-area amorphous Ge islands above the substrate surface. This work demonstrates a potential approach for dense vertical integration of Ge-based devices on Si substrates, for on-chip optoelectronics or 3D integrated circuit applications.