Isao H. Inoue

Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator

A field-effect transistor has been constructed that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel. This device functions as an n-type accumulation-mode device. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect (FE) mobility is 0.1 cm2/V s and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2 K shows a thermal-activation-type behavior with an activation energy of 0.6 eV.A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FETs. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV.

Colossal electroresistance of a Pr 0.7 Ca 0.3 Mn O 3 thin film at room temperature

The electronic conduction through a

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches : Homogeneous/inhomogeneous transition of current distribution

{\mathrm{Pr}}_{0.7}{\mathrm{Ca}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}

Resistance switching in the metal deficient-type oxides: NiO and CoO

thin film is investigated by measurements using dc and pulsed biases. Semiconducting

Strong electron correlation effects in nonvolatile electronic memory devices

{\mathrm{Pr}}_{0.7}{\mathrm{Ca}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}

Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films

films sandwiched by electrodes show both hysteretic and asymmetric behaviors in current-voltage characteristics. The observed conduction characteristics exhibit the space-charge-limited-current effect, and the hysteretic behavior can be ascribed to a carrier trapping and detrapping of the trap sites in the manganite. The hysteresis induces a colossal electroresistance (CER) of more than 5000% at room temperature. The CER ratio is independent of the duration time of pulses from an infinite (dc) down to

Low temperature metallic state induced by electrostatic carrier doping of SrTiO3

150\phantom{\rule{0.3em}{0ex}}\mathrm{ns}

Control of resistance switching voltages in rectifying Pt∕TiOx∕Pt trilayer

, indicating that the carrier filling of all the traps can be completed within a short time.

Strain‐Mediated Phase Control and Electrolyte‐Gating of Electron‐Doped Manganites

Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off-state and the other is a conductive on-state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, non-volatile threshold switching, and current--voltage duality. From the systematic sample-size dependence of the resistance in on- and off-states, we conclude that the resistance switching is due to the homogeneous/inhomogeneous transition of the current distribution at the interface.

Synthesis and Characterization of Pt/Co-O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching

The resistance switching properties in Pt∕Ni–O∕Pt and Pt∕Co–O∕Pt synthesized by the magnetron sputtering have been investigated. The oxygen partial pressure during sputtering and the post-thermal process are crucial to forming of the trilayer. By investigating x-ray photoemission spectroscopy spectra, the increase of initial resistance in Ni–O was caused by the variation of the stoichiometry, while that in the Co–O was accompanied by the phase transformation between CoO and Co3O4. The resistance switching in Pt∕Co–O∕Pt and Pt∕Ni–O∕Pt exhibits the analogous electrode area and temperature dependences. As a result of the I-V measurements at the elevated temperature, the assistance of Joule heating in the reset process is implied.