Ivan Oleynik

Graphene growth and stability at nickel surfaces

The formation of single-layer graphene by exposure of a Ni(111) surface to ethylene at low pressure has been investigated. Two different growth regimes were found. At temperatures between 480 and 650 °C, graphene grows on a pure Ni(111) surface in the absence of a carbide. Below 480 °C, graphene growth competes with the formation of a surface Ni2C carbide. This Ni2C phase suppresses the nucleation of graphene. Destabilization of the surface carbide by the addition of Cu to the surface layer facilitates the nucleation and growth of graphene at temperatures below 480 °C. In addition to the growth of graphene on Ni substrates, the interaction between graphene and Ni was also studied. This was done both experimentally by Ni deposition on Ni-supported graphene and by density functional theory calculation of the work of adhesion between graphene and Ni. For graphene sandwiched between two Ni-layers, the work of adhesion between graphene and the Ni substrate was found to be four times as large as that for the Ni-supported graphene without a top layer. This stronger interaction may cause the destruction of graphene that is shown experimentally to occur at ~200 °C when Ni is deposited on top of Ni-supported graphene. The destruction of graphene allows the Ni deposits to merge with the substrate Ni. After the completion of this process, the graphene sheet is re-formed on top of the Ni substrate, leaving no Ni at the surface.

Rectification mechanism in diblock oligomer molecular diodes.

We investigated a mechanism of rectification in diblock oligomer diode molecules that have recently been synthesized and showed a pronounced asymmetry in the measured I-V spectrum. The observed rectification effect is due to the resonant nature of electron transfer in the system and the localization properties of bound state wave functions of resonant states of the tunneling electron interacting with an asymmetric molecule in an electric field. The asymmetry of the tunneling wave function is enhanced or weakened depending on the polarity of the applied bias. The conceptually new theoretical approach, the Greens function theory of sub-barrier scattering, is able to provide a physically transparent explanation of this rectification effect based on the concept of the bound state spectrum of a tunneling electron. The theory predicts the characteristic features of the I-V spectrum in qualitative agreement with experiment.

A mechanism for crystal twinning in the growth of diamond by chemical vapour deposition

A model for the formation of crystal twins in chemical vapour deposited diamond materials is presented. The twinning mechanism originates from the formation of a hydrogen-terminated four carbon atom cluster on a local {111} surface morphology, which also serves as a nucleus to the next layer of growth. Subsequent growth proceeds by reaction at the step edges with one and two carbon atom-containing species. The model also provides an explanation for the high defect concentration observed in ⟨111⟩ growth sectors, the formation of penetration and contact twins, and the dramatic enhancement in polycrystalline diamond growth rates and morphology changes when small amounts of nitrogen are added to the plasma-assisted growth environments.

Interface effects in spin-dependent tunneling

Abstract In the past few years the phenomenon of spin-dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. One such question is the role of interfaces in MTJs and their effect on the spin polarization of the tunneling current and TMR. In this paper we consider different models which suggest that the spin polarization is primarily determined by the electronic and atomic structure of the ferromagnet/insulator interfaces rather than by their bulk properties. First, we consider a simple tight-binding model which demonstrates that the existence of interface states and their contribution to the tunneling current depend on the degree of hybridization between the orbitals on metal and insulator atoms. The decisive role of the interfaces is further supported by studies of spin-dependent tunneling within realistic first-principles models of Co/vacuum/Al, Co/Al 2 O 3 /Co, Fe/MgO/Fe, and Co/SrTiO 3 /Co MTJs. We find that variations in the atomic potentials and bonding strength near the interfaces have a profound effect resulting in the formation of interface resonant states, which dramatically affect the spin polarization and TMR. The strong sensitivity of the tunneling spin polarization and TMR to the interface atomic and electronic structure dramatically expands the possibilities for engineering optimal MTJ properties for device applications.

Density functional theory calculations of solid nitromethane under hydrostatic and uniaxial compressions with empirical van der Waals correction.

First-principles density functional theory calculations have been performed with and without an empirical van der Waals (vdW) correction to obtain constitutive relationships of solid nitromethane under hydrostatic and uniaxial compressions. The unit-cell parameters at zero pressure and the hydrostatic equation of state at 0 K are in reasonable agreement with experimental data using pure DFT, and the agreement is significantly improved with the inclusion of the vdW dispersion correction. Uniaxial compressions normal to the {100}, {010}, {001}, {110}, {101}, {011}, and {111} planes were performed, and a comparison of the principal stresses, changes in energy, and shear stresses for different compression directions clearly indicate anisotropic behavior of solid nitromethane upon compression. The calculated anisotropic constitutive relationships might help to link the anisotropic shock sensitivity and the underlying atomic-scale properties of solid nitromethane.

First-principles anisotropic constitutive relationships in β-cyclotetramethylene tetranitramine (β-HMX)

First-principles density functional theory calculations have been performed to obtain constitutive relationships in the crystalline energetic material β-cyclotetramethylene tetranitramine (β-HMX). In addition to hydrostatic loading, uniaxial compressions in the directions normal to the {100}, {010}, {001}, {110}, {101}, {011}, and {111} planes have been performed to investigate the anisotropic equation of state (EOS). The calculated lattice parameters and hydrostatic EOS are in reasonable agreement with the available experimental data. The uniaxial compression data show a significant anisotropy in the principal stresses, change in energy, band gap, and shear stresses, which might lead to the anisotropy of the elastic-plastic shock transition and shock sensitivity of β-HMX.

Layer-dependent properties of SnS 2 and SnSe 2 two-dimensional materials

The layer dependent structural, electronic and vibrational properties of SnS2 and SnSe2 are investigated using first-principles density functional theory (DFT). The in-plane lattice constants, interlayer distances and binding energies are found to be layer-independent. Bulk SnS2 and SnSe2 are both indirect band gap semiconductors with Eg = 2.18 eV and 1.07 eV, respectively. Few-layer and monolayer 2D systems also possess an indirect band gap, which is increased to 2.41 eV and 1.69 eV for single layers of SnS2 and SnSe2. The effective mass theory of 2D excitons, which takes into account the combined effect of the anisotropy, non-local 2D screening and layer-dependent 3D screening, predicts strong excitonic effects. The binding energy of indirect excitons in monolayer samples, Ex~0.9 eV, is substantially reduced to Ex = 0.14 eV in bulk SnS2 and Ex = 0.09 eV in bulk SnSe2. The layer-dependent Raman spectra display a strong decrease of intensities of the Raman active A1g mode upon decreasing the number of layers down to a monolayer, by a factor of 7 in the case of SnS2 and a factor of 20 in the case of SnSe2 which can be used to identify number of layers in a 2D sample.

Hydrostatic and uniaxial compression studies of 1,3,5-triamino- 2,4,6-trinitrobenzene using density functional theory with van der Waals correction

Hydrostatic and uniaxial compressions of 1,3,5-triamino-2,4,6-trinitrobenzene were investigated using first-principles density functional theory with an empirical van der Waals correction. The equilibrium structural and elastic properties and the hydrostatic equation of state are in good agreement with available experimental data. Physical properties such as the principal stresses, shear stresses, band gap, and the change in energy per atom as a function of compression ratio V/V0 in the directions normal to the (100), (010), (001),(110), (101), (011), and (111) crystallographic planes were calculated, showing highly anisotropic behavior under uniaxial compressions.

Reactive molecular dynamics of hypervelocity collisions of PETN molecules.

Born-Oppenheimer direct dynamics classical trajectory simulations of bimolecular collisions of PETN molecules have been performed to investigate the fundamental mechanisms of hypervelocity chemistry relevant to initiating reactions immediately behind the shock wavefront in energetic molecular crystals. The solid-state environment specifies the initial orientations of colliding molecules. The threshold velocities for initiating chemistry for a variety of crystallographic orientations were correlated with available experimental data on anisotropic shock sensitivity of PETN. Collisions normal to the planes (001) and (110) were found to be most sensitive with threshold velocities on the order of characteristic particle velocities in detonating PETN. The production of NO2 is the dominant reaction pathway in most of the reactive cases. The simulations show that the reactive chemistry, driven by dynamics rather than temperature during hypervelocity collisions, can occur at a very short time scale (10(-13) s) under highly nonequilibrium conditions.

Pentazole and Ammonium Pentazolate: Crystalline Hydro-Nitrogens at High Pressure

Two new crystalline compounds, pentazole (N5H) and ammonium pentazolate (NH4)(N5), both featuring cyclo-N5- are discovered using a first-principles evolutionary search of the nitrogen-rich portion of the hydro-nitrogen binary phase diagram (NxHy, x ≥ y) at high pressures. Both crystals consist of the pentazolate N5- anion and ammonium NH4+ or hydrogen H+ cations. These two crystals are predicted to be thermodynamically stable at pressures above 30 GPa for (NH4)(N5) and 50 GPa for pentazole N5H. The chemical transformation of ammonium azide (NH4)(N3) mixed with dinitrogen (N2) to ammonium pentazolate (NH4)(N5) is predicted to become energetically favorable above 12.5 GPa. To assist in identification of newly synthesized compounds in future experiments, the Raman spectra of both crystals are calculated and mode assignments are made as a function of pressure up to 75 GPa.