Ivo Rendina

Temperature dependence of the thermo-optic coefficient in crystalline silicon between room temperature and 550 K at the wavelength of 1523 nm

The temperature dependence of the thermo-optic coefficient for crystalline silicon has been measured in the temperature range between room temperature and 550 K at the wavelength of 1523 nm by means of an interferometric technique. This technique, which requires a very simple experimental setup, is based on the observation of the fringe pattern produced by temperature changes in a Fabry–Perot resonator. Measurement results indicate that the thermo-optic coefficient is independent on the sample doping and crystal plane orientation. The experimental data appear to be in agreement with the few values reported to date at this important wavelength. The temperature dependence of the excitonic band gap is also calculated by fitting these data with a recently introduced model of ∂n/∂T.

Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma-enhanced chemical-vapor deposition.

A new amorphous silicon waveguide is realized by use of amorphous silicon carbon as cladding material. The structure is characterized both experimentally and theoretically, and its application for optical interconnections in photonic integrated circuits on silicon motherboards is proposed. The fabrication process is based on low-temperature (220 degrees C) plasma-enhanced chemical-vapor deposition and is compatible with standard microelectronic processes. Propagation losses of 1.8 dB/cm have been measured at the fiber-optic wavelength of 1.3 microm. A strong thermo-optic coefficient has been measured in this material at this wavelength and exploited for the realization of a light-intensity modulator based on a Fabry-Perot interferometer that is tunable by temperature.

Marine diatoms as optical chemical sensors

Complex micro- and nanostructured materials for optical sensing purposes are designed and fabricated using top technologies. A completely different approach to engineering systems at the nanoscale consists in recognizing the nanostructures and morphologies that nature has optimized during life’s history on earth. We have found that the photoluminescence emission from silica skeleton of marine diatoms Thalassiosira rotula Meunier is strongly dependent on the surrounding environment. Both the optical intensity and the peaks positions are affected by gases and organic vapors. Depending on the electronegativity and polarizing ability, some substances quench the luminescence, while others effectively enhance it. These phenomena allow the discrimination between different substances. These naturally occurring organisms are thus good candidates as optical sensing materials.

Amorphous silicon-based guided-wave passive and active devices for silicon integrated optoelectronics

Waveguides and interferometric light amplitude modulators for application at the 1.3- and 1.55-/spl mu/m fiber communication wavelengths have been fabricated with thin-film hydrogenated amorphous silicon and its related alloys. The technique adopted for the thin-film growth is the plasma- enhanced chemical vapor deposition, which has been shown to give the lowest defect concentration in the film. Consequently the proposed waveguiding structures take advantage of the low optical absorption shown by a-Si:H at photon energies below the energy gap. In addition a good radiation confinement can be obtained thanks to the bandgap tailoring opportunity offered by this simple and inexpensive technology. In particular rib waveguides, based on a a-SiC:H/a-Si:H stack, have been realized on crystal silicon, showing low propagation losses. Recently, however, a new interest as low as 0.7 dB/cm. The same structure has been utilized for the fabrication of thermooptic Fabry-Perot modulators with switching times of 10 /spl mu/s. Modulators based on the alternative waveguiding configuration ZnO/a-Si:H, giving comparable results, are also presented.

Lensless light focusing with the centric marine diatom Coscinodiscus walesii.

In this work, we report on the light focusing ability exploited by the microshell of a marine organism: the Coscinodiscus wailesii diatom. A 100 microm spot size of a red laser beam is narrowed up to less than 10 microm at a distance of 104 microm after the transmission through the regular geometry of the diatom structure, which thus acts as a microlens. Numerical simulations of the electromagnetic field propagation show a good qualitative agreement with the experimental results. The focusing effect is due to the superposition of the waves scattered by the holes present on the surface of the diatom valve. Very interesting applications in micro-optic devices are feasible due to the morphological and biological characteristic of these unicellular organisms.

Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 K at the wavelength of 1.5 μm

The thermo-optic coefficient ∂n/∂T has been measured from room temperature to 600 K at the wavelength of 1523 nm in three important semiconductors for fiber-optic device fabrication, namely, InP, GaAs, and 6H–SiC. The adopted technique is very simple and is based on the observation of the periodicity of the signal transmitted, at the desired wavelength, by an etalon made of the material under test, when it experiences a temperature variation. The values of ∂n/∂T measured in InP and GaAs at room temperature are in agreement with previously reported ones, but increase with temperature with a weak quadratic dependence. SiC conversely shows a lower thermo-optic coefficient (2.77×10−5 K−1) at 300 K, which, however, doubles for a 300 K temperature increase.

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Temperature dependence analysis of the thermo-optic effect in silicon by single and double oscillator models

The thermo-optic coefficient (dn/dT) of crystalline silicon has been critically analyzed in the temperature range 300–600 K, at the fiber optic communication wavelength of 1.5 μm. The temperature dependence has been attributed to the variation of the interband transition energies at some critical points of the silicon band structure. The experimental data have been fitted using single and double oscillator models. In particular, the double oscillator model, which is physically correlated to the silicon band structure, has been exploited to extrapolate the temperature dependence of the interband transition energies at some points (critical points) of the combined density of states. The extracted parameters are in good agreement with the data reported in the literature. Finally, in connection with both of the oscillator approximations, an analysis based on thermodynamic considerations is carried out, and electron–hole formation entropy and specific heat are calculated. The consistency of the obtained result...

Advance in thermo-optical switches: principles, materials, design, and device structure

All-optical networking can be the sole approach to provide the huge bandwidth required for future networks. The essential elements in such an optical network are optical switches. A number of options have been proposed in order to implement them efficiently. We focus on thermo-optical switches. First, the physical principles of the thermo-optic effect are briefly introduced. A description of the most common technologies used for the fabrication of thermo-optic switches is provided along with the values of thermo-optic coefficient for a number of materials. The main steps useful in order to design thermo-optical switches are also briefly introduced. Finally, a birds-eye view of the main and recent proposals of switches based on the thermo-optic effect is reported and their performances compared.

Photonic band gaps analysis of Thue-Morse multilayers made of porous silicon

Dielectric aperiodic Thue-Morse structures up to 128 layers have been fabricated by using porous silicon technology. The photonic band gap properties of Thue-Morse multilayers have been theoretically investigated by means of the transfer matrix method and the integrated density of states. The theoretical approach has been compared and discussed with the reflectivity measurements at variable angles for both the transverse electric and transverse magnetic polarizations of light. The photonic band gap regions, wide 70 nm and 90 nm, included between 0 and 30 degrees , have been observed for the sixth and seventh orders, respectively.