J. A. Schneeloch

Ubiquitous Interplay Between Charge Ordering and High-Temperature Superconductivity in Cuprates

Besides superconductivity, copper-oxide high-temperature superconductors are susceptible to other types of ordering. We used scanning tunneling microscopy and resonant elastic x-ray scattering measurements to establish the formation of charge ordering in the high-temperature superconductor Bi2Sr2CaCu2O8+x. Depending on the hole concentration, the charge ordering in this system occurs with the same period as those found in Y-based or La-based cuprates and displays the analogous competition with superconductivity. These results indicate the similarity of charge organization competing with superconductivity across different families of cuprates. We observed this charge ordering to leave a distinct electron-hole asymmetric signature (and a broad resonance centered at +20 milli–electron volts) in spectroscopic measurements, indicating that it is likely related to the organization of holes in a doped Mott insulator. Surface and bulk measurements in bismuth-based cuprates agree and indicate a short-range charge order. [Also see Perspective by Morr] Copper-Oxide Superconductors Copper-oxide superconductors have a complex electronic structure. A charge density order has been observed in two cuprate families; however, it has been unclear whether such an order exists in Bi-based compounds (see the Perspective by Morr). Comin et al. (p. 390, published online 19 December) and da Silva Neto et al. (p. 393, published online 19 December) address this question in single-layer and double-layer Bibased cuprates, respectively. For both families of materials, surface measurements by scanning tunneling spectroscopy agree with bulk measurements obtained through resonant elastic x-ray scattering, which suggests the formation of short-range correlations that modulate the charge density of the carriers over a range of dopings. Thus, charge ordering may represent a common characteristic of the major cuprate families.

Observation of the chiral magnetic effect in ZrTe5

The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin 1/2 particles with a definite projection of spin on momentum) – a dramatic phenomenon arising from a collective motion of particles and antiparticles in the Dirac sea. The recent discovery of Dirac semimetals with chiral quasi-particles opens a fascinating possibility to study this phenomenon in condensed matter experiments. Here we report on the first observation of chiral magnetic effect through the measurement of magneto-transport in zirconium pentatelluride, ZrTe₅. Our angle-resolved photoemission spectroscopy experiments show that this material’s electronic structure is consistent with a 3D Dirac semimetal. We observe a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect. Furthermore, the observed phenomenon stems from the effective transmutation of Dirac semimetal into a Weyl semimetal induced by the parallel electric and magnetic fields that represent a topologically nontrivial gauge field background.

Fully gapped topological surface states in Bi2Se3 films induced by ad-wave high-temperature superconductor

By growing a topological insulator on top of a high-temperature superconducting substrate it is possible to induce superconductivity in the surface states of the topological insulator. Moreover, the pairing symmetry of the induced superconductivity is s-wave, unlike the d-wave symmetry of the substrate.

Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3.

Significance Surface states of topological insulators (TIs) should exhibit extraordinary electronic phenomena when a ‘Dirac-mass gap’ is opened in their spectrum, typically by creating a ferromagnetic state. However, our direct visualization of the Dirac-mass gap Δ(r) in a ferromagnetic TI reveals its intense disorder at the nanoscale. This is correlated with the density of magnetic dopant atoms n(r), such that Δ(r)∝n(r) as anticipated for surface-state–mediated ferromagnetism. Consequent new perspectives on ferromagnetic TI physics include that the quantum anomalous Hall effect occurs in this environment of extreme Dirac-mass disorder and that paths of associated chiral edge states must be tortuous. To achieve all the exotic physics expected of ferromagnetic TIs, greatly improved control of dopant-induced Dirac-mass gap disorder is therefore required. To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a “Dirac-mass gap” in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship Δ(r)∝n(r) is confirmed throughout and exhibits an electron–dopant interaction energy J* = 145 meV·nm2. These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

Chiral magnetic effect in ZrTe5

The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin 1/2 particles with a definite projection of spin on momentum) – a dramatic phenomenon arising from a collective motion of particles and antiparticles in the Dirac sea. The recent discovery of Dirac semimetals with chiral quasi-particles opens a fascinating possibility to study this phenomenon in condensed matter experiments. Here we report on the first observation of chiral magnetic effect through the measurement of magneto-transport in zirconium pentatelluride, ZrTe₅. Our angle-resolved photoemission spectroscopy experiments show that this material’s electronic structure is consistent with a 3D Dirac semimetal. We observe a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect. Furthermore, the observed phenomenon stems from the effective transmutation of Dirac semimetal into a Weyl semimetal induced by the parallel electric and magnetic fields that represent a topologically nontrivial gauge field background.

Optimizing the superconducting transition temperature and upper critical field of Sn1-xInxTe

Sn(1-x)In(x)Te is a possible candidate for topological superconductivity. Previous work has shown that substitution of In for Sn in the topological crystalline insulator SnTe results in superconductivity, with the transition temperature, Tc, growing with In concentration. We have performed a systematic investigation of Sn(1-x)In(x)Te for a broad range of x, synthesizing single crystals (by a modified floating zone method) as well as polycrystalline samples. The samples have been characterized by x-ray diffraction, resistivity, and magnetization. For the single crystals, the maximum Tc is obtained at x=0.45 with a value of of 4.5 K, as determined by the onset of diamagnetism.

Nodeless pairing in superconducting copper-oxide monolayer films on Bi2Sr2CaCu2O8+δ

Abstract The pairing mechanism of high-temperature superconductivity in cuprates remains the biggest unresolved mystery in condensed matter physics. To solve the problem, one of the most effective approaches is to investigate directly the superconducting CuO2 layers. Here, by growing CuO2 monolayer films on Bi2Sr2CaCu2O8+δ substrates, we identify two distinct and spatially separated energy gaps centered at the Fermi energy, a smaller U-like gap and a larger V-like gap on the films, and study their interactions with alien atoms by low-temperature scanning tunneling microscopy. The newly discovered U-like gap exhibits strong phase coherence and is immune to scattering by K, Cs and Ag atoms, suggesting its nature as a nodeless superconducting gap in the CuO2 layers, whereas the V-like gap agrees with the well-known pseudogap state in the underdoped regime. Our results support an s-wave superconductivity in Bi2Sr2CaCu2O8+δ, which, we propose, originates from the modulation-doping resultant two-dimensional hole liquid confined in the CuO2 layers.摘要铜氧化物高温超导体的超导机理是近30年凝聚态物理学悬而未决的重大科学难题之一。为了彻底解决这一科学难题,最有效的办法是直接测量铜氧化物中的超导层-CuO2的性质。在本研究中,我们首次利用分子束外延技术在Bi2Sr2CaCu2O8+δ衬底表上制备出了单层的CuO2薄膜。原位低温扫描隧道显微镜研究表明,取决于衬底电荷转移情况,单层CuO2薄膜会呈现“U”和“V”两种不同形状的能隙结构。我们发现,“V”形状能隙对应于铜氧化物中BiO层的赝能隙,和超导的形成没有必然的联系;“U”形状无节点的能隙为超导能隙,它不受非磁性杂质(K、Cs和Ag)散射的影响。我们的研究说明铜氧化物高温超导体具有s波电子配对对称性。根据这些结果,我们提出了调制掺杂诱导的、基于刚性能带(rigid-band)的二维空穴液体模型,利用这个模型我们可以解释复杂的高温超导相图。

Bulk Signatures of Pressure-Induced Band Inversion and Topological Phase Transitions in Pb 1 − x Sn x Se

The characteristics of topological insulators are manifested in both their surface and bulk properties, but the latter remain to be explored. Here we report bulk signatures of pressure-induced band inversion and topological phase transitions in Pb(1-x)Sn(x)Se (x=0.00, 0.15, and 0.23). The results of infrared measurements as a function of pressure indicate the closing and the reopening of the band gap as well as a maximum in the free carrier spectral weight. The enhanced density of states near the band gap in the topological phase gives rise to a steep interband absorption edge. The change of density of states also yields a maximum in the pressure dependence of the Fermi level. Thus, our conclusive results provide a consistent picture of pressure-induced topological phase transitions and highlight the bulk origin of the novel properties in topological insulators.

Mapping the Electronic Structure of Each Ingredient Oxide Layer of High-T\{c} Cuprate Superconductor Bi{2}Sr{2}CaCu{2}O{8+δ}.

Understanding the mechanism of high transition temperature (T{c}) superconductivity in cuprates has been hindered by the apparent complexity of their multilayered crystal structure. Using a cryogenic scanning tunneling microscopy (STM), we report on layer-by-layer probing of the electronic structures of all ingredient planes (BiO, SrO, CuO{2}) of Bi{2}Sr{2}CaCu_2}O{8+δ} superconductor prepared by argon-ion bombardment and annealing technique. We show that the well-known pseudogap (PG) feature observed by STM is inherently a property of the BiO planes and thus irrelevant directly to Cooper pairing. The SrO planes exhibit an unexpected van Hove singularity near the Fermi level, while the CuO{2} planes are exclusively characterized by a smaller gap inside the PG. The small gap becomes invisible near T{c}, which we identify as the superconducting gap. The above results constitute severe constraints on any microscopic model for high T{c} superconductivity in cuprates.

Electronic structure of the ingredient planes of the cuprate superconductor Bi2Sr2CuO6+δ: A comparison study with Bi2Sr2CaCu2O8+δ

By means of low-temperature scanning tunneling microscopy, we report on the electronic structures of the BiO and SrO planes of the Bi2Sr2CuO6+δ (Bi-2201) superconductor prepared by argon-ion bombardment and annealing. Depending on post annealing conditions, the BiO planes exhibit either a pseudogap (PG) with sharp coherence peaks and an anomalously large gap magnitude of 49 meV or van Hove singularity (vHS) near the Fermi level, while the SrO is always characteristic of a PG-like feature. This contrasts with the Bi2Sr2CaCu2O8+δ (Bi-2212) superconductor where vHS occurs solely on the SrO plane. We disclose the interstitial oxygen dopants (δ in the formulas) as a primary cause for the occurrence of vHS, which are located dominantly around the BiO and SrO planes, respectively, in Bi-2201 and Bi-2212. This is supported by the contrasting structural buckling amplitude of the BiO and SrO planes in the two superconductors. Furthermore, our findings provide solid evidence for the irrelevance of PG to the superconductivity in the two superconductors, as well as insights into why Bi-2212 can achieve a higher superconducting transition temperature than Bi-2201, and by implication, the mechanism of cuprate superconductivity.