J. Bruce Wagner

Electrical Conductivity Measurements on Cuprous Halides

The total electrical conductivity and the electron hole conductivity in solid CuCl, CuBr, and CuI between 250 and 450°C have been determined with help of ac measurements on samples between copper electrodes and dc polarization measurements on the cellCu|cuprous halide|graphite.

Investigations on Cuprous Sulfide

The activity of copper in cuprous sulfide as a function of the copper‐to‐sulfur ratio has been determined with the help of coulometric titrations. The homogeneity range of cuprous sulfide at 400°C extends from a copper‐to‐sulfur ratio of 1.9996±0.0002 for samples coexisting with metallic copper to a ratio of less then 1.93 for samples coexisting with digenite (Cu1.8S). The ratio of the effective mass of electron holes to that of the free electron has been found to be 7±2 at 435°C. Preliminary conductivity measurements suggest a considerable increase of the mobility of electron holes with an increasing copper deficit of the samples presumably due to fewer collisions of electron holes with excess electrons.

Investigations on a High Conductivity Solid Electrolyte System, RbCl + CuCl

Solid electrolytes with high copper ionic conductivity and low electronic hole conductivity were found in the RbCl + CuCl system. The highest conductivity of RbCu/sub 3/Cl/sub 4/ (75 mole percent (m/o) CuCl) was 2.25 x 10/sup -3/ (..cap omega..-cm)/sup -1/ at 25/sup 0/C. The conductivity was measured as functions of temperature and of composition. X-ray patterns and thermal analyses indicate that the material is a new compound and not a mixture of the constituents. 6 figures, 2 tables.

High Conductivity Cuprous Halide‐Metal Halide Systems

The a-c electrical conductivity was measured for the systems CuI + CdI/sub 2/, CuCl + CdCl/sub 2/, CuI + KI, CuI + RbI, and CuCl + RbCl, and the results are discussed in relation to phase diagrams. New, highly conducting materials at room temperature were surveyed for the system, RbCl + CuCl. 4 figures, 5 tables.

The Influence of Point Defects on the Kinetics of Dissolution of Semiconductors

Abstract : The kinetics of dissolution of semiconductors as a function of point defects introduced by varying the stoichiometry and/or by doping additions have been studied. Experiments on two ionic semiconductors, lead sulfide and zinc oxide, are described. Under conditions involving a relatively large change in the oxidation states of the constituents in the solid-liquid reaction, the kinetics have been shown to vary markedly with point defect concentration. Preliminary results of other investigations under this contract are also mentioned. (Author)

Electrical Properties of LiFe[sub 5]O[sub 8]

Lithium compounds have been considered for use as solid-state electrolytes and as electrode materials in batteries involving Li as one reactant. Ac and dc conductivity measurements were made on LiFe/sub 5/O/sub 8/ as a function of temperature (22 to 850/sup 0/C) and oxygen partial pressure. Diffraction patterns yielded lattice constants. ..cap alpha.. and ..beta.. phase transition was found to occur at 740 +- 5/sup 0/C. 1 figure, 2 tables. (RWR)