J. C. Shen

Nitrogen and boron doped monolayer graphene by chemical vapor deposition using polystyrene, urea and boric acid

Chemical doping with foreign atoms is an effective method to intrinsically modify the properties of the host materials. In this paper, we report a facile strategy to prepare nitrogen and boron doped monolayer graphene by using urea and boric acid as solid precursors. By adjusting the elemental precursors, the nitrogen content could be modulated from 0.9 to 4.8% for nitrogen doped graphene and the boron content from 0.7 to 4.3% for boron doped graphene respectively, as estimated by X-ray photoelectron spectroscopy. The mobilities of the nitrogen and boron doped graphene-based back-gate field-effect transistors are about 350–550 cm2 V−1 s−1 and 450–650 cm2 V −1 s−1 respectively. Our results are better than plasma treated nitrogen and boron doped graphene. Therefore the synthesis of nitrogen and boron doped graphene sheets by a solid doping elemental precursor method is considered to be an efficient approach to producing graphene with excellent optical and electrical performances at relatively low cost.

Identification of Surface Structures on 3C-SiC Nanocrystals with Hydrogen and Hydroxyl Bonding by Photoluminescence

SiC nanocrystals (NCs) exhibit unique surface chemistry and possess special properties. This provides the opportunity to design suitable surface structures by terminating the surface dangling bonds with different atoms thereby boding well for practical applications. In this article, we report the photoluminescence properties of 3C-SiC NCs in water suspensions with different pH values. Besides a blue band stemming from the quantum confinement effect, the 3C-SiC NCs show an additional photoluminescence band at 510 nm when the excitation wavelengths are longer than 350 nm. Its intensity relative to the blue band increases with the excitation wavelength. The 510 nm band appears only in acidic suspensions but not in alkaline ones. Fourier transform infrared, X-ray photoelectron spectroscopy, and X-ray absorption near-edge structure analyses clearly reveal that the 3C-SiC NCs in the water suspension have Si-H and Si-OH bonds on their surface, implying that water molecules only react with a Si-terminated surface. First-principle calculations suggest that the additional 510 nm band arises from structures induced by H(+) and OH(-) dissociated from water and attached to Si dimers on the modified (001) Si-terminated portion of the NCs. The size requirement is consistent with the observation that the 510 nm band can only be observed when the excitation wavelengths are relatively large, that is, excitation of bigger NCs.

Tin Oxide Nanoribbons with Vacancy Structures in Luminescence-Sensitive Oxygen Sensing

Vacancy structures in tin oxide nanoribbons fabricated via thermal evaporation and post-processing are probed by luminescence spectroscopy, and interesting properties that bode well for oxygen sensing are observed. Besides a broad 620-nm band, the fabricated tin oxide nanoribbons show a photoluminescence band at 480 nm when the measurement temperature is <100 K. The blue band appears from nanoribbons synthesized under high oxygen pressure or annealed under oxygen. The dependence suggests that the oxygen interstitial and vacancy densities determine the electronic states that produce the blue band. Calculation of the electron structures based on the density functional theory shows that decreased oxygen vacancies or increased oxygen interstitials enhance the 480-nm band but suppress the 620-nm band. The results reported here indicate that the tin oxide nanoribbons with vacancy structures have potential applications in luminescence-sensitive oxygen sensing.

Mn2+-Bonded Reduced Graphene Oxide with Strong Radiative Recombination in Broad Visible Range Caused by Resonant Energy Transfer

The photoluminescence (PL) characteristics of Mn(2+)-bonded reduced graphene oxide (rGO) are studied in details. The Mn(2+)-bonded rGO is synthesized using MnO(2)-decorated GO as the intermediate products and ideal tunable PL is obtained by enhancing the long-wavelength (450-550 nm) emission. The PL spectra excited by different wavelengths are analyzed to elucidate the mechanism, and the resonant energy transfer between Mn(2+) and sp(2) clusters of the rGO appears to be responsible for the enhanced long-wavelength emission. To examine the effect of Mn(2+) on the long-wavelength emission from the Mn(2+)-bonded rGO, the PL characteristics of Mn(2+)-bonded rGO with smaller Mn concentrations are studied and weaker emission is observed. Our theoretical calculation corroborates the experimental results.

Green light stimulates terahertz emission from mesocrystal microspheres

The discovery of efficient sources of terahertz radiation has been exploited in imaging applications, and developing a nanoscale terahertz source could lead to additional applications. High-frequency mechanical vibrations of charged nanostructures can lead to radiative emission, and vibrations at frequencies of hundreds of kilohertz have been observed from a ZnO nanobelt under the influence of an alternating electric field. Here, we observe mechanical resonance and radiative emission at ∼ 0.36 THz from core-shell ZnO mesocrystal microspheres excited by a continuous green-wavelength laser. We find that ∼ 0.016% of the incident power is converted into terahertz radiation, which corresponds to a quantum efficiency of ∼ 33%, making the ZnO microspheres competitive with existing terahertz-emitting materials. The mechanical resonance and radiation stem from the coherent photo-induced vibration of the hexagonal ZnO nanoplates that make up the microsphere shells. The ZnO microspheres are formed by means of a nonclassical, self-organized crystallization process, and represent a straightforward route to terahertz radiation at the nanoscale.

Facile synthesis of Ag interlayer doped graphene by chemical vapor deposition using polystyrene as solid carbon source.

Graphene was synthesized by chemical vapor deposition using polystyrene as the solid carbon source. The number of graphene layers could be controlled by regulating the weight of polystyrene under atmospheric pressure at 1000 °C. Silver nanoparticles were then deposited on the graphene by a citrate reduction method. The interaction between graphene and silver was investigated by suface-enhanced Raman scattering spectra and X-ray photoelectron spectroscopy. The change in the G band position indicates n-type doping of the graphene due to an interaction between the silver and the graphene. Silver interlayer doped four-layer graphene shows a sheet resistance of 63 Ω/sq and a light transmittance of 85.4% at 550 nm. The optical and electrical quality of graphene exceeds the minimum industry standard for indium tin oxide replacement materials. It is clearly understood that the environmental sheet resistance stability of the interlayer doped graphene film is better than that of surface doped graphene sheets. The presence of graphene at the surface also acts as a protective layer for the inner silver ions and clusters.

Surface-enhanced Raman characteristics of Ag cap aggregates on silicon nanowire arrays

A convenient nanotechnique is used to place analyte molecules between closely spaced silver-capped Si nanowires for investigating surface-enhanced Raman scattering (SERS). It is revealed that the SERS intensity (or sensitivity) is closely related to the etching time used to prepare the Si nanowires from wafer. As the etching leaves the nominal spacing between the nanowires unaffected, the observed effect can be explained based on different gaps between the Ag particles due to the different lengths of the Si nanowires. Large SERS intensity for short etching times can be elucidated in terms of the rigidity of the nanowires and the smaller SERS intensities for longer etching times can be explained by considering the bending of nanowires and the agglomeration of the Ag caps due to gravity and van der Waals forces.

Synthesis of single-phase HgBa2Ca2Cu3O8+δ superconductor

Abstract The third member (Hg-1223) of the recently discovered homologous series HgBa2Can−1CunO2n+2+δ, having a Tc of 118 K (as synthesized sample) and 133 K (oxygen-annealed sample), was successfully prepared by the solid state reaction and short-time annealing technique using mixtures of the metal oxides HgO, BaO, CaO and CuO with starting composition HgBa2Ca2Cu3O8+δ. We found that the combination of very short annealing times with optimum temperatures 715–725°C gives rise to a very effective sintering of the constituents and avoids an excessive loss of Hg. Samples so obtained display a sharp superconducting transition determined both magnetically and resistively. The X-ray diffraction patterns of both the 118 K phase and the 133 K phase indicate a nearly single phase, corresponding to the tetragonal structure of space group P4/mmm and with lattice parameters a= 3.85 A and c= 15.85 A . The resistivity ϱ of such a sample was very low, ∼ 12x10-3 Ω cm at 300 K, and the ϱ versus T curve was linearly extrapolated to zero resistance at 0 K, being similar to the cases of high-quality high-Tc cuprates. Energy dispersive X-ray analysis (EDX) data of several grains of the Hg-1223 sample are in agreement with the proposed chemical formula.

Optical identification of oxygen vacancy types in SnO2 nanocrystals

The oxygen vacancies in spherical and cuboid SnO2 nanocrystals prepared by hydrothermal and laser ablation methods are investigated optically. Three oxygen-vacancy-related photoluminescence peaks at ∼430, ∼501, and ∼618 nm are observed, and Raman scattering and density functional calculation disclose that they originate from in-plane, sub-bridging, and bridging oxygen vacancies, respectively. This work reveals that the photoluminescence peaks together with the Raman modes can be used to identify the oxygen vacancy types in SnO2 nanostructures.

Oxygen-vacancy and depth-dependent violet double-peak photoluminescence from ultrathin cuboid SnO2 nanocrystals

A double peak in the violet region between 360 and 400 nm is observed from the photoluminescence spectra acquired from cuboid SnO2 nanocrystals and the energy separation between the two subpeaks increases with nanocrystal size. The phenomenon arises from band edge recombination caused by different in-depth distributions of oxygen vacancies (OVs). Density functional theory calculations disclose that variations in the oxygen vacancies with depth introduce valence-band peak splitting leading to the observed splitting and shift of the double peak.