J. Debus

Exciton and trion dynamics in atomically thin MoSe2 and WSe2: effect of localization

We present a detailed investigation of the exciton and trion dynamics in naturally doped

Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment

{\mathrm{MoSe}}_{2}

Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure

and

Spin relaxation of negatively charged excitons in (In,Al)As/AlAs quantum dots with indirect band gap and type-I band alignment

{\mathrm{WSe}}_{2}

Spin-flip Raman scattering of the neutral and charged excitons confined in a CdTe/(Cd,Mg)Te quantum well

single atomic layers as a function of temperature in the range 10--300 K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy, we show the importance of exciton and trion localization in both materials at low temperatures. We also reveal the transition to delocalized exciton complexes at higher temperatures where the exciton and trion thermal energy exceeds the typical localization energy. This is accompanied by strong changes in PL including suppression of the trion PL and decrease of the trion PL lifetime, as well as significant changes for neutral excitons in the temperature dependence of the PL intensity and the appearance of a pronounced slow PL decay component. In

Spin-flip Raman scattering of the Γ-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dots

{\mathrm{MoSe}}_{2}

Spin dynamics and magnetic field induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment

and

Spin diffusion in the Mn 2 + ion system of II-VI diluted magnetic semiconductor heterostructures

{\mathrm{WSe}}_{2}

Direct measurement of the long-range p−d exchange coupling in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure

studied here, the temperatures where such strong changes occur are observed at around 100 and 200 K, respectively, in agreement with their inhomogeneous PL linewidth of 8 and 20 meV at

Optical orientation of hole magnetic polarons in (Cd,Mn)Te/(Cd,Mn,Mg)Te quantum wells

T\ensuremath{\approx}10\phantom{\rule{4.pt}{0ex}}\text{K}