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Dive into the research topics where J. Drechsel is active.

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Featured researches published by J. Drechsel.


Applied Physics Letters | 2005

Efficient organic solar cells based on a double p-i-n architecture using doped wide-gap transport layers

J. Drechsel; Bert Männig; F. Kozlowski; Martin Pfeiffer; Karl Leo; Harald Hoppe

The use of doped wide-gap charge transport layers with high conductivity and low absorption in the visible range enables one to achieve high internal quantum efficiencies and to optimize the devices with respect to optical interference effects. Here, it is shown that this architecture is particularly useful for stacking several cells on top of each other. The doping eases the recombination of the majority carriers at the interface between the cells, whereas the recombination centers are hidden for excitons and minority carriers. By stacking two p-i-n cells both with a phthalocyanine-fullerene blend as photoactive layer, a power efficiency of up to 3.8% at simulated AM1.5 illumination as compared to 2.1% for the respective single p-i-n cell has been achieved. Numerical simulations of the optical field distribution based on the transfer-matrix formalism are applied for optimization. The concept paves the way to even higher efficiencies by stacking several p-i-n cells with different photoactive materials tha...


Applied Physics Letters | 2002

Low-voltage inverted transparent vacuum deposited organic light-emitting diodes using electrical doping

Xiang Zhou; Martin Pfeiffer; Jingsong Huang; Jan Blochwitz-Nimoth; D. S. Qin; Ansgar Werner; J. Drechsel; Bert Maennig; Karl Leo

We demonstrate low-voltage inverted transparent vacuum deposited organic light-emitting diodes employing an indium-tin-oxide coated glass substrate directly as cathode and a semitransparent top Au thin film as anode. The devices comprise an intrinsic 8-tris-hydroxyquinoline aluminum (Alq3) emitting layer sandwiched in between n- and p-doped charge transport layer with appropriate blocking layers. They exhibit low driving voltages (∼4 V for a luminance of ∼100 cd/m2). The devices are about 50% transparent in the Alq3 emission region and emit green light from both sides with a total external current efficiency of about 2.5 cd/A.


Applied Physics Letters | 2002

High-efficiency electrophosphorescent organic light-emitting diodes with double light-emitting layers

Xiang Zhou; D. S. Qin; Martin Pfeiffer; Jan Blochwitz-Nimoth; Ansgar Werner; J. Drechsel; Bert Maennig; Karl Leo; M. Bold; P. Erk; H. Hartmann

We demonstrate high-efficiency electrophosphorescent organic light-emitting diodes (PHOLEDs) with double light-emitting layers (D–EMLs) by doping both hole and electron transport hosts with fac tris(2-phenylpyridine)iridium [Ir(ppy)3] simultaneously. The D–EMLs PHOLEDs show significantly improved efficiency (peak external quantum efficiency of about 12.6%, corresponding to a current efficiency of 44.3 cd/A) compared to the conventional PHOLEDs with a single EML and either hole or electron transport host doped with Ir(ppy)3. We attribute this improvement mainly to reduced losses of triplet excitons into regions that are not doped by phosphorescent emitter molecules.


Synthetic Metals | 2003

High-efficiency low-voltage stable inverted transparent electrophosphorescent organic light-emitting diodes: combining electrically doped carrier transport layers and iridium-complex doped emissive layer

Xiang Zhou; Jan Blochwitz-Nimoth; Martin Pfeiffer; Bert Maennig; J. Drechsel; Ansgar Werner; Karl Leo

We demonstrated high-efficiency low-voltage stable inverted transparent clectrophosphorescent organic light-emitting diodes employing an indium-tin-oxide coated glass substrate directly as cathode and a semitransparent top Au thin film as anode. The structure contains an iridium-complex doped emissive layer sandwiched in between n- and p-doped charge transport layer with appropriate blocking layers to form a nip structure. The devices are about 50% transparent and emit green light from both sides with peak external quantum efficiency (EQE) of 4.08% (14.3 cd/A). At 100 cd/m 2 , the EQE is 2.8% (13 cd/A) at an operating voltage of 4.3 V. The devices exhibit a lifetime of above 50 hours under continuous constant-current driving for the initial luminance of about 9000 cd/m 2 in vacuum, which project a lifetime of ∼5000 hours for 100 cd/m 2 .


Organic optoelectronics and photonics. Conference | 2004

N-type doping of organic electron transport materials for solar cells

Fenghong Li; Ansgar Werner; Kentaro Harada; Bert Maennig; J. Drechsel; Karl Leo; Martin Pfeiffer

To realize organic solar cells with high performance, we developed a novel way of stable n-doping using cationic dyes in electron transport materials. In our approach, the volatile donors are created in-situ from stable precursor compounds. Using the cationic dye pyronin B (PyB) as a model precursor, we carried out conductivity and field effect measurements to characterize the properties of doped naphtalene tetracarboxylic dianhydride (NTCDA) thin film. The results show a strong increase in n-type conductivity. Combined FTIR, UV/VIS/NIR and mass spectroscopic measurements suggest the formation of leuco pyronin B during sublimation of pyronin B chloride, and a subsequent charge transfer between dopant and matrix providing free electrons, which increase the n-type conductivity.


Applied Physics A | 2004

Organic p -i- n solar cells

B. Maennig; J. Drechsel; D. Gebeyehu; P. Simon; F. Kozlowski; A. Werner; F. Li; S. Grundmann; S. Sonntag; M. Koch; Karl Leo; Martin Pfeiffer; Harald Hoppe; D. Meissner; Niyazi Serdar Sariciftci; Ingo Riedel; Vladimir Dyakonov; J. Parisi


Solar Energy Materials and Solar Cells | 2003

Bulk-heterojunction photovoltaic devices based on donor–acceptor organic small molecule blends

D. Gebeyehu; Bert Maennig; J. Drechsel; Karl Leo; Martin Pfeiffer


Organic Electronics | 2004

MIP-type organic solar cells incorporating phthalocyanine/fullerene mixed layers and doped wide-gap transport layers

J. Drechsel; Bert Männig; D. Gebeyehu; Martin Pfeiffer; Karl Leo; Harald Hoppe


Archive | 2004

Photoactive component with organic layers

J. Drechsel; Martin Pfeiffer; Bert Maennig; Karl Leo


Synthetic Metals | 2002

Organic Mip-diodes by p-doping of amorphous wide-gap semiconductors: CV and impedance spectroscopy

J. Drechsel; Martin Pfeiffer; Xiang Zhou; A. Nollau; Karl Leo

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Martin Pfeiffer

Dresden University of Technology

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Bert Maennig

Dresden University of Technology

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Ansgar Werner

Dresden University of Technology

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D. Gebeyehu

Dresden University of Technology

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Thomas Asperger

Dresden University of Technology

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Xiang Zhou

Dresden University of Technology

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Bert Männig

Dresden University of Technology

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Jan Blochwitz-Nimoth

Dresden University of Technology

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F. Kozlowski

Dresden University of Technology

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