J. Fukaya

A 240 W push-pull GaAs power FET for W-CDMA base stations

A 240 W power FET for cellular base stations of a next generation system has been developed. The FET consists of four 60 W chips, which were fabricated by using our high efficiency and low distortion device technique, combined in a push-pull configuration. The developed FET achieved 240 W (53.8 dBm) output power, 11.2 dB linear gain and 54% power-added efficiency at 2.14 GHz. This is the highest output power device using GaAs FET technology.

A C-band 25 watt linear power FET

A novel four-way power combiner/divider based on 1/8-wavelength transmission line consideration is applied to the design of internally matched GaAs FETs. The resultant FET delivers an output power at 1-dB gain compression point of 44 dBm (25 W) with 12-dB linear gain, 40% power added efficiency, and -46-dBc third-order intermodulation distortion at an output power of 35 dBm (single carrier level) over the 4.4- to 5.0-GHz frequency range.<<ETX>>

A 68% P.A.E. power pHEMT for K-band satellite communication system

A 68% power-added efficiency power pseudomorphic HEMT (pHEMT) has been developed. Based on an optimized device structure and tuned to the maximum efficiency condition, we achieved this efficiency with 225 mW output power at 18 GHz. Using this power pHEMT technology, we have also developed a K-band 2-stage MMIC amplifier with 45% power-added efficiency, 450 mW output power and 18 dB gain. These are the highest efficiency figures reported for K-band applications.

A compact PA MMIC module for K-band high-speed wireless systems

A K-band high-power MMIC amplifier module in a low-cost metal-ceramic package has been developed to provide an easy insertion of PA MMICs into K-band high-speed wireless systems. This PA module is comprised of a driver amplifier MMIC and a power amplifier MMIC with a total gain of 30 dB and a P/sub 1 dB/ of 33.5 dBm at frequencies between 23 and 26 GHz. The total performance of this module, G(dB)/spl times//spl Delta/f/f/sub 0/ is two times higher than previously reported works.

A high power density, 6W MMIC for Ku/K-Band applications

A Ku/K-Band very small size MMIC high power amplifier (HPA) providing 6W of CW output power, 23dB of gain and 30% power added efficiency for application in the Ku/K-Band is presented. It is produced on a low cost, commercially available 0.25um pHEMT process. This MMIC is composed of three stage pHEMT and chip size is 3.5 /spl times/ 3.0 mm/sup 2/. The HPA achieved 570 mW output power per 1 mm/sup 2/ die area. This value is the highest power density at Ku/K/Ka-Band reported to date.

An ultra broad band 300 W GaAs power FET for W-CDMA base stations

An ultra broad band 300 W power FET for W-CDMA base stations systems has been developed. This FET consists of four newly developed 260 mm total gate width (Wgt) chips fabricated with quasi enhancement-mode (E-mode) structure. The broadband performance is obtained by means of multi-stage quarter wave length transformers, which are formed on high dielectric constant thin substrates. The developed FET demonstrated the performance of 300 W (54.8 dBm) saturated power and 11 dB linear gain at 2.15 GHz. In addition 0.2 dB power gain flatness was achieved across 180 MHz bandwidth (at output power 47 dBm). The group delay of this device was 2.14 nanosecond and the phase flatness was less than 0.35 degree between 2.11 and 2.17 GHz. This is the highest output power and widest bandwidth device ever reported.

High Dynamic-Range and Very Low Noise K-Band p-HEMT LNA MMIC for LMDS and Satellite Communication

An excellent noise figure and high linearity, K-band p-HEMT LNA MMIC, that incorporates single-bias configuration and negative feedback circuit, has been developed for LMDS (Local Multi-point Distribution Service) and satellite communication. The third order intercept point (IP3) of this MMIC is 20 dBm, while output power at 1-dB gain compression is 8.5 dBm. The IP3 and noise figure is 19.5 +/¿ 1 dBm and 1.8 +/¿ 0.2 dB, respectively, at frequencies between 24 and 32 GHz. The die size of the MMIC is 1.9 mm2. This MMIC shows a potential reliable application in high-speed wireless access system.

A 6 GHz, 50 watt low distortion push-pull GaAs power FET optimized for 12 V class A-B operation

A low distortion 50 Watt push-pull quasi E-mode GaAs FET for 6 GHz terrestrial and satellite communication applications has been developed. The push-pull FET, which operates at drain voltage (V/sub ds/) of 12 V, class A-B, has a saturated output power (P/sub sat/) of 47 dBm (50 W) and a linear gain (G/sub L/) Of 10 dB in the frequency range of 5.8 to 6.5 GHz. A third order intermodulation distortion (IM/sub 3/) and an associated power-added efficiency (PAE) at 41 dBm output power of -35 dBc and 18% respectively. As compared with conventional single-ended D-mode FET, it has an IM/sub 3/ and PAE improvement of 5 dB and 5% respectively.

High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications

Recent commercial wireless applications such as Point to Point radio links, LMDS (Local Multipoint Distribution Service), LMCS (Local multi-point Communications Service) and Commercial K-Band Satellite based services have spurred significant activity in development of mmWave power amplifiers. These applications lie in the frequency range of 18 to 42GHz with possible future extensions to 60GHz. These systems employ digital modulation schemes for which highly linear mmWave power amplifiers are essential. This paper presents an overview of some chipsets consisting of High Power amplifiers covering the frequency range of 18 to 32GHz. Preferred solutions to a low cost subsystem vary from one subsystem manufacturer to another as it involves assembly and test capabilities in addition to component costs. The overall direction appears to be toward multi-chip module assemblies. Here, both chip and packaged level component options are considered.

4W GaAs MMIC Power Amplifier for PCS and W-CDMA Base Station

A three stage amplifier has been developed for PCS, EDGE and W-CDMA applications. Using the MESFET GaAs process of the Fujitsu foundry, we achieved a typical 30dB gain and 4 Watts output power. The input matches for a 50ohm system and the output used a pre-match circuit in order to increase its low impedance. This amplifier has a frequency range of 1.7Ghz to 2.3 Ghz.