J.G. de Wit
University of Amsterdam
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Publication
Featured researches published by J.G. de Wit.
pp 39-46 of Ion Implantation in Semiconductors. /Ruge, Ingolf (ed.). New York Springer-Verlag New York, Inc. (1971). | 1971
J.G. de Wit; C. A. J. Ammerlaan
Electron paramagnetic resonance has been used to study radiation damage after implantation of 50 keV phosphorus ions into high resistivity p-type silicon. Doses of 2 • 1014–1016 P/cm2 are found to produce small numbers (~ 1013/cm2) of the Si-G7 spectrum, which arises from the single negative charge state of the divacancy. The observed introduction rate is an order of magnitude lower than the production as observed by infraredabsorption. This indicates, that nearly all of the divacancies are in the neutral charge state. Consequently the Fermi level must be positioned near the middle of the energy gap.
Journal of Clinical Investigation | 1996
J.G. de Wit; H.A. van Gent
Air Transport Research Society World ConferenceAir Transportation Research SocietyAir Transport Research Society | 2003
G. Burghouwt; J.G. de Wit
European Journal of Transport and Infrastructure Research | 2008
J.G. de Wit; G. Burghouwt
Journal of Airport Management | 2009
G. Burghouwt; J.G. de Wit; J. Veldhuis; Hidenobu Matsumoto
Archive | 2008
Hidenobu Matsumoto; J. Veldhuis; J.G. de Wit; G. Burghouwt
Archive | 2008
A. Budde; G. Burghouwt; J.G. de Wit
Citizenship Studies | 2007
J.G. de Wit; G. Burghouwt
Economisch-Statistische Berichten | 2009
J.G. de Wit; G. Burghouwt
Bioethics | 2007
J.G. de Wit; J. Veldhuis; G. Burghouwt; Hidenobu Matsumoto
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