J.G. Swadener

The correlation of the indentation size effect measured with indenters of various shapes

Experimental results are presented which show that the indentation size effect for pyramidal and spherical indenters can be correlated. For a pyramidal indenter, the hardness measured in crystalline materials usually increases with decreasing depth of penetration, which is known as the indentation size effect. Spherical indentation also shows an indentation size effect. However, for a spherical indenter, hardness is not affected by depth, but increases with decreasing sphere radius. The correlation for pyramidal and spherical indenter shapes is based on geometrically necessary dislocations and work-hardening. The Nix and Gao indentation size effect model (J. Mech. Phys. Solids 46 (1998) 411) for conical indenters is extended to indenters of various shapes and compared to the experimental results.

Anisotropic properties of human tibial cortical bone as measured by nanoindentation

The purpose of this study was to investigate the effects of elastic anisotropy on nanoindentation measurements in human tibial cortical bone. Nanoindentation was conducted in 12 different directions in three principal planes for both osteonic and interstitial lamellae. The experimental indentation modulus was found to vary with indentation direction and showed obvious anisotropy (oneway analysis of variance test, P < 0.0001). Because experimental indentation modulus in a specific direction is determined by all of the elastic constants of cortical bone, a complex theoretical model is required to analyze the experimental results. A recently developed analysis of indentation for the properties of anisotropic materials was used to quantitatively predict indentation modulus by using the stiffness matrix of human tibial cortical bone, which was obtained from previous ultrasound studies. After allowing for the effects of specimen preparation (dehydrated specimens in nanoindentation tests vs. moist specimens in ultrasound tests) and the structural properties of bone (different microcomponents with different mechanical properties), there were no statistically significant differences between the corrected experimental indentation modulus (Mexp) values and corresponding predicted indentation modulus (Mpre) values (two‐tailed unpaired t‐test, P < 0.5). The variation of Mpre values was found to exhibit the same trends as the corrected Mexp data. These results show that the effects of anisotropy on nanoindentation measurements can be quantitatively evaluated.

Measurement of residual stress by load and depth sensing indentation with spherical indenters

A new experimental technique is presented for making measurements of biaxial residual stress using load and depth sensing indentation (nanoindentation). The technique is based on spherical indentation, which, in certain deformation regimes, can be much more sensitive to residual stress than indentation with sharp pyramidal indenters like the Berkovich. Two different methods of analysis were developed: one requiring an independent measure of the materials yield strength and the other a reference specimen in the unstressed state or other known reference condition. Experiments conducted on aluminum alloys to which controlled biaxial bending stresses were applied showed that the methods are capable of measuring the residual stress to within 10-20% of the specimen yield stress. Because the methods do not require imaging of the hardness impressions, they are potentially useful for making localized measurements of residual stress, as in thin films or small volumes, or for characterization of point-to-point spatial variations of the surface stress.

Indentation of elastically anisotropic half-spaces by cones and parabolae of revolution

Abstract Indentation of ceramic materials with smooth indenters such as parabolae of revolution and spheres can be conducted in the elastic regime to relatively high loads. Ceramic single crystals thus provide excellent calibration media for load and depth-sensing indentation testing; however, they are generally anisotropic and a complete elastic analysis is cumbersome. This study presents a simplified procedure for the determination of the stiffness of contact for the indentation of an anisotropic half-space by a rigid frictionless parabola of revolution which, to first order, approximates spherical indentation. Using a similar approach, a new procedure is developed for analysing conical indentation of anisotropic elastic media. For both indenter shapes, the contact is found to be elliptical, and equations are determined for the size, shape and orientation of the ellipse and the indentation modulus.

A mechanistic description of combined hardening and size effects

Mechanistic models based on geometrically necessary dislocations are re-examined in light of recent experiments exhibiting the indentation size effect. A simple method is developed to combine work hardening, solid solution hardening, radiation hardening and size effects. The model is verified by experiments in ionic salt crystals.

Thermal stability of sputter-deposited 330 austenitic stainless-steel thin films with nanoscale growth twins

We have explored the thermal stability of nanoscale growth twins in sputter-deposited 330 stainless-steel (SS) films by vacuum annealing up to 500 °C. In spite of an average twin spacing of only 4 nm in the as-deposited films, no detectable variation in the twin spacing or orientation of twin interfaces was observed after annealing. An increase in the average columnar grain size was observed after annealing. The hardness of 330 SS films increases after annealing, from 7 GPa for as-deposited films to around 8 GPa for annealed films, while the electrical resistivity decreases slightly after annealing. The changes in mechanical and electrical properties after annealing are interpreted in terms of the corresponding changes in the residual stress and microstructure of the films.

Strengthening mechanisms in nanostructured copper/304 stainless steel multilayers

Nanostructured Cu/304 stainless steel (SS) multilayers were prepared by magnetron sputtering. 304SS has a face-centered-cubic (fcc) structure in bulk. However, in the Cu/304SS multilayers, the 304SS layers exhibit the fcc structure for layer thickness of =5 nm in epitaxy with the neighboring fcc Cu. For 304SS layer thickness larger than 5 nm, body-centered-cubic (bcc) 304SS grains grow on top of the initial 5 nm fcc SS with the Kurdjumov-Sachs orientation relationship between bcc and fcc SS grains. The maximum hardness of Cu/304SS multilayers is about 5.5 GPa (factor of two enhancement compared to rule-of-mixtures hardness) at a layer thickness of 5 nm. Below 5 nm, hardness decreases with decreasing layer thickness. The peak hardness of fcc/fcc Cu/304SS multilayer is greater than that of Cu/Ni, even though the lattice-parameter mismatch between Cu and Ni is five times greater than that between Cu and 304SS. This result may primarily be attributed to the higher interface barrier stress for single-dislocation transmission across the {111} twinned interfaces in Cu/304SS as compared to the {100} interfaces in Cu/Ni.

Strain distributions and electronic property modifications in Si/Ge axial nanowire heterostructures

Molecular dynamics simulations were carried out for Si/Ge axial nanowire heterostructures using modified effective atom method (MEAM) potentials. A Si–Ge MEAM interatomic cross potential was developed based on available experimental data and was used for these studies. The atomic distortions and strain distributions near the Si/Ge interfaces are predicted for nanowires with their axes oriented along the [111] direction. The cases of 10 and 25 nm diameter Si/Ge biwires and of 25 nm diameter Si/Ge/Si axial heterostructures with the Ge disk 1 nm thick were studied. Substantial distortions in the height of the atoms adjacent to the interface were found for the biwires but not for the Ge disks. Strains as high as 3.5% were found for the Ge disk and values of 2%–2.5% were found at the Si and Ge interfacial layers in the biwires. Deformation potential theory was used to estimate the influence of the strains on the band gap, and reductions in band gap to as small as 40% of bulk values are predicted for the Ge disks. The localized regions of increased strain and resulting energy minima were also found within the Si/Ge biwire interfaces with the larger effects on the Ge side of the interface. The regions of strain maxima near and within the interfaces are anticipated to be useful for tailoring band gaps and producing quantum confinement of carriers. These results suggest that nanowire heterostructures provide greater design flexibility in band structure modification than is possible with planar layer growth.

Increasing the fracture toughness of silicon by ion implantation

Previous studies have shown that moderate doses of radiation can lead to increased fracture toughness in ceramics. An experimental investigation was conducted to determine the effects of ion implantation on fracture toughness in silicon. Specimens implanted with Ne showed increased fracture toughness, over the entire range of implantations tested. Using ions of various energies to better distribute implantation damage further increased the fracture toughness even though the region of amorphous damage was slightly decreased. The implantation damage accumulated in a predictable manner so that fracture toughness could be optimized.

Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate

Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.