J. Gomis-Bresco

Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.

A one-dimensional optomechanical crystal with a complete phononic band gap

Recent years have witnessed the boom of cavity optomechanics, which exploits the confinement and coupling of optical and mechanical waves at the nanoscale. Among their physical implementations, optomechanical (OM) crystals built on semiconductor slabs enable the integration and manipulation of multiple OM elements in a single chip and provide gigahertz phonons suitable for coherent phonon manipulation. Different demonstrations of coupling of infrared photons and gigahertz phonons in cavities created by inserting defects on OM crystals have been performed. However, the considered structures do not show a complete phononic bandgap, which should enable longer lifetimes, as acoustic leakage is minimized. Here we demonstrate the excitation of acoustic modes in a one-dimensional OM crystal properly designed to display a full phononic bandgap for acoustic modes at 4 GHz. The modes inside the complete bandgap are designed to have high-mechanical Q-factors, limit clamping losses and be invariant to fabrication imperfections.

Phonons in slow motion: dispersion relations in ultrathin Si membranes.

We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silicon membranes as thin as ∼8 nm. We observe a reduction of the phase and group velocities of the fundamental flexural mode by more than 1 order of magnitude compared to bulk values. The modification of the dispersion relation in nanostructures has important consequences for noise control in nano- and microelectromechanical systems (MEMS/NEMS) as well as opto-mechanical devices.

Impact of carrier-carrier scattering and carrier heating on pulse train dynamics of quantum dot semiconductor optical amplifiers

We investigate the impact of carrier-carrier scattering on the gain recovery dynamics of a quantum dot (QD) semiconductor optical amplifier. Simulations, based on semiconductor Bloch equations with microscopically calculated Coulomb scattering rates between the carrier reservoir and the QDs, show a very good agreement with experimentally obtained pump-probe dynamics over a range of injection currents. With the microscopically obtained scattering rates at hand, we can conclude that fast cascading relaxation processes between the two-dimensional carrier reservoir and the QDs in combination with carrier heating enhancing the scattering efficiency drives the ultrafast gain recovery observed in QD based semiconductor devices.

A novel contactless technique for thermal field mapping and thermal conductivity determination: two-laser Raman thermometry.

We present a novel contactless technique for thermal conductivity determination and thermal field mapping based on creating a thermal distribution of phonons using a heating laser, while a second laser probes the local temperature through the spectral position of a Raman active mode. The spatial resolution can be as small as 300 nm, whereas its temperature accuracy is ±2 K. We validate this technique investigating the thermal properties of three free-standing single crystalline Si membranes with thickness of 250, 1000, and 2000 nm. We show that for two-dimensional materials such as free-standing membranes or thin films, and for small temperature gradients, the thermal field decays as T(r) ∝ ln(r) in the diffusive limit. The case of large temperature gradients within the membranes leads to an exponential decay of the thermal field, T ∝ exp[ - A·ln(r)]. The results demonstrate the full potential of this new contactless method for quantitative determination of thermal properties. The range of materials to which this method is applicable reaches far beyond the here demonstrated case of Si, as the only requirement is the presence of a Raman active mode.

Nonlinear gain dynamics of quantum dot optical amplifiers

In this work, the ultrafast gain dynamics of a quantum dot (QD)-based semiconductor optical amplifier (SOA) is modeled on the basis of semiconductor Bloch equations that include microscopically calculated nonlinear scattering rates between QD carriers and the surrounding carrier reservoir. This enables us to separately study the dynamics of electrons and holes inside the device as well as the coherent effects related to the fast polarization dynamics. We show that the optical pulse power and the dephasing time of the polarization mainly affect the gain depletion inside the active region, while the electric injection current density and thus the internal carrier dynamics influence the gain recovery. We observe that carrier–carrier scattering is the source of desynchronized behavior of electrons and holes in the recovery dynamics of QD-based SOAs. The amplification of pulse trains in the SOA predicted by our model agrees well with experimental data.

Time-resolved amplified spontaneous emission in quantum dots

In time-resolved experiments at InGaAs/GaAs quantum-dots-in-a-well (DWELL) semiconductor optical amplifiers, pump-probe of the ground state (GS) population, and complementary measurement of the amplified spontaneous emission of the excited state (ES) population, we are able to separate the early subpicosecond dephasing dynamics from the later picosecond population relaxation dynamics. We observe a 10 ps delay between the nonlinear GS pulse amplification and the subsequent ES population drop-off that supports the dominance of a direct two dimensional reservoir-GS capture relaxation path in electrically pumped quantum-dot-DWELL structures.

Ultrafast Relaxation Dynamics via Acoustic Phonons in Carbon Nanotubes

Carbon nanotubes as one-dimensional nanostructures are ideal model systems to study relaxation channels of excited charged carriers. The understanding of the ultrafast scattering processes is the key for exploiting the huge application potential that nanotubes offer, e.g., for light-emitting and detecting nanoscale electronic devices. In a joint study of two-color pump-probe experiments and microscopic calculations based on the density matrix formalism, we extract, both experimentally and theoretically, a picosecond carrier relaxation dynamics, and ascribe it to the intraband scattering of excited carriers with acoustic phonons. The calculated picosecond relaxation times show a decrease for smaller tube diameters. The best agreement between experiment and theory is obtained for the (8,7) nanotubes with the largest investigated diameter and chiral angle for which the applied zone-folded tight-binding wave functions are a good approximation.

Analytical description of gain depletion and recovery in quantum dot optical amplifiers

We present an analytical description of ultrashort femtosecond pump–probe experiments and investigate the gain response of quantum dot (QD) semiconductor optical amplifiers. The calculation provides a full analytical solution of numerical studies to recent experiments in such structures (Gomis-Bresco et al 2008 Phys. Rev. Lett. 101 256803). Our approach is based on QD Bloch equations, which are analytically evaluated within the third-order temporal perturbation theory (χ(3) level). In particular, we study the influence of the coherence and the population dynamics of two confined QD levels on the gain as a function of the delay time between the pump and the probe pulse. We discuss how to engineer optimal conditions for high-performance QD amplifiers, which are characterized by an ultrafast gain recovery and a pronounced gain depletion.

A self-stabilized coherent phonon source driven by optical forces

We report a novel injection scheme that allows for “phonon lasing” in a one-dimensional opto-mechanical photonic crystal, in a sideband unresolved regime and with cooperativity values as low as 10−2. It extracts energy from a cw infrared laser source and is based on the triggering of a thermo-optical/free-carrier-dispersion self-pulsing limit-cycle, which anharmonically modulates the radiation pressure force. The large amplitude of the coherent mechanical motion acts as a feedback that stabilizes and entrains the self-pulsing oscillations to simple fractions of the mechanical frequency. A manifold of frequency-entrained regions with two different mechanical modes (at 54 and 122 MHz) are observed as a result of the wide tuneability of the natural frequency of the self-pulsing. The system operates at ambient conditions of pressure and temperature in a silicon platform, which enables its exploitation in sensing, intra-chip metrology or time-keeping applications.