J. Huran

DEPOSITION AND PROPERTIES OF NICKEL OXIDE FILMS PRODUCED BY DC REACTIVE MAGNETRON SPUTTERING

Nickel oxide (NiO) thin films were prepared on Si substrates by DC reactive magnetron sputtering from a nickel metal target in Ar+O2 with the relative O2 content varied from 15 to 50%. The effects of the O2 gas content on the deposition rate, structure, composition and electrical properties were investigated. NiO stoichiometric films were obtained with a polycrystalline structure and a specific resistivity of near 300 Ωcm at 25% O2 content in the discharge gas. Film composition and structure, and this resistivity, were dependent on the discharge parameters. Thus the deposited films had amorphous and polycrystalline structures with Ni\O ratio ranges between 0.71 and 1.02 as a function of the discharge O2 content.

RBS study of amorphous silicon carbide films deposited by PECVD

We present properties of nitrogen-doped amorphous silicon carbide films that were grown by a plasma enhanced chemical vapour deposition (PECVD) technique and annealed by pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH3 into the gas mixture of silane SiH4 and methane CH4, which were directly introduced into the reaction chamber. The actual amount of nitrogen in the SiC films was determined by Rutherford backscattering spectrometry (RBS). A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen.

Physical and bonding characteristics of N-doped hydrogenated amorphous silicon carbide films grown by PECVD and annealed by pulsed electron beam

Nitrogen-doped amorphous silicon carbide films were grown by a plasma enhanced chemical vapour deposition (PE CVD) technique. The actual amount of nitrogen in the SiC films is determined by Rutherford backscattering spectrometry (RBS). For irradiation experiments we use electron beams with a kinetic energy 200 keV, a pulse duration of 300 ns, and a beam current of 150 A/cm2. It is found that with increased nitrogen doping and following activation of dopants the resistivity of the amorphous SiC films is substantially reduced.