J. Jedrzejewski
Hebrew University of Jerusalem
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Featured researches published by J. Jedrzejewski.
Semiconductors | 2008
A. N. Karpov; D. V. Marin; V. A. Volodin; J. Jedrzejewski; G. A. Kachurin; E. Savir; N. L. Shwartz; Z. Sh. Yanovitskaya; I. Balberg; Y. Goldstein
Deposition of SiOx layers of variable composition onto silicon wafers was performed by co-sputtering of spaced Si and SiO2 targets in argon plasma. Coordinate dependences of the thickness and refractive index of separately deposited Si and SiO2 layers and the SiOx layer grown during co-sputtering of targets were determined using optical techniques. It was shown that the SiOx layer composition is not equal to a simple sum of thicknesses of separately deposited Si and SiO2 layers. The coordinate dependences of the Si and SiO2 layer thicknesses were calculated. To fit the calculated and experimental data, it is necessary to assume that no less than 10% of silicon is converted to dioxide during co-sputtering. A comparison of the coordinate dependences of the IR absorbance in SiO2 and SiOx layers with experimental ellipsometric data confirmed the presence of excess oxygen in the SiOx layer. Taking into account such partial oxidation of sputtered silicon, composition isolines in the substrate plane were calculated. After annealing of the SiOx layer at 1200°C, photoluminescence was observed in a wafer area predicted by calculations, which was caused by the formation of quantum-size Si nanocrystallites. The photoluminescence intensity was maximum at x = 1.78 ± 0.3, which is close to the composition optimum for ion-beam synthesis of nanocrystals.
Semiconductors | 2006
I. V. Antonova; Mitrofan B. Gulyaev; Z. Sh. Yanovitskaya; V. A. Volodin; D. V. Marin; M. D. Efremov; Y. Goldstein; J. Jedrzejewski
The photoluminescence and electrical properties are compared for silicon-oxide layers containing Si nanocrystals and having different Si content. The oxide was deposited by co-sputtering of silicon dioxide and silicon with the subsequent annealing for the formation of nanocrystals. Excess Si content in the layer varies along the sample from 6 to 74 vol %. It is found that a charge magnitude determined from the flat-band voltage has a pronounced peak for the excess Si content of about 26%, the largest charge correlating with the highest photoluminescence intensity. The further increase in the excess Si content in oxide leads to a decrease in both the oxide charge and the photoluminescence intensity and to the appearance of percolation conductivity.
Semiconductors | 2010
S. N. Shamin; V. R. Galakhov; V. I. Aksenova; A. N. Karpov; N. L. Shvartz; Z. Sh. Yanovitskaya; V. A. Volodin; I. V. Antonova; T. B. Ezhevskaya; J. Jedrzejewski; E. Savir; I. Balberg
Ultrasoft X-ray emission spectroscopy and infrared spectroscopy are used to study the Si/SiO2 composite structure produced by deposition from the Si and SiO2 sources onto the Si substrate. Separation of the sources by a rather long distance (96 mm) made it possible to vary the composition of the layer along the direction parallel to the sample surface in a wide range from almost pure SiO2 to Si. On the basis of the X-ray emission Si L2, 3 spectra, amorphous silicon a-Si and silicon oxide SiO2 were identified in the layers. The infrared spectra show that there are Si nanocrystals in the layers. Variations in the content of Si/SiO2 along the direction parallel to the wafer surface are established. The data obtained by the above-mentioned techniques are correlated with the results of calculations of the layer composition and with the data of profilometric measurements of the layer thicknesses.
Solid State Phenomena | 2009
Irina V. Antonova; D. V. Marin; V. A. Volodin; V.A. Skuratov; J. Jedrzejewski; I. Balberg
In the present paper we discuss effects due to high-energy ion bombardment of SiO2 layers with embedded Si nanocrystals (NCs), such as the formation of new Si NCs in such layers, amorphization of previously existing NCs, modification of NC size distribution, and modification of optical and electrical properties of NCs. These effects are identified as resulting from anisotropic strain - anisotropic heating in NCs-SiO2 layers under ion irradiation.
Semiconductors | 2011
I. V. Antonova; S. A. Smagulova; E. P. Neustroev; V.A. Skuratov; J. Jedrzejewski; E. Savir; I. Balberg
The method of charge deep-level transient spectroscopy (Q-DLTS) is used to study and compare the ejection of charge carriers from silicon nanocrystals (NCs) located in an ordered or random way in the SiO2 matrix. It is shown that, in all cases, this ejection is a thermally activated process. The parameters of energy barriers characterizing the processes of ejection of charge carriers from the levels of nanocrystals in the layers NCs:SiO2 before (random distribution) and after their modification by irradiation with high-energy ions (ordered distribution of nanocrystals) are determined. It is found that the activation energies for ejection of charge carriers from nanocrystals and the size of nanocrystals estimated from the difference between energies of two levels observed by the Q-DLTS method decrease as the ion fluence is increased. The density of nanocrystals observed by the Q-DLTS method decreases by approximately an order of magnitude as a result of irradiation with fluence of 1012–1013 cm−2 in comparison with an initial unirradiated structure; this decrease is due to formation of conducting chains of nanocrystals in tracks.
Semiconductors | 2010
I. V. Antonova; V. A. Skuratov; J. Jedrzejewski; I. Balberg
It is found that irradiation of SiO2 layers containing Si nanocrystals with high-energy heavy ions induces profound structural modifications—specifically, the formation of vertically ordered arrays of nanocrystals along the ion tracks. This effect results in substantial changes in the electrical properties (the conductivity and capacitance—voltage characteristics) and optical (photoluminescence) properties of the layers containing nanocrystals.
Solid State Phenomena | 2007
Irina V. Antonova; M.B. Gulyaev; V.A. Skuratov; D. V. Marin; E.V. Zaikina; Z.S. Yanovitskaya; J. Jedrzejewski; I. Balberg
Samples with layer of silicon nanocrystals embedded in SiO2 (the single phase Si content in oxide ranged between 5 and 92 volume %) were subjected to high energy ion implantation. Implantation-induced modifications of SiO2-ncSi properties discussed in this paper include a shift of the major ncSi-related photoluminescence peak and intensification of the high-photon energy peaks, that accompany the change in amount and type of the charge trapped on the nanocrystals. A unified model is suggested for all these phenomena.
Solid State Phenomena | 2007
M. Baran; N. Korsunska; L. Khomenkova; T. Stara; V. Khomenkov; Y. Goldstein; E. Savir; J. Jedrzejewski
The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.
Solid State Phenomena | 2005
M. Baran; L. Khomenkova; N. Korsunska; T. Stara; Moissei K. Sheinkman; V. Yukhymchuk; V. Khomenkov; Y. Goldstein; J. Jedrzejewski; E. Savir
The aging process of silicon nanostructures obtained by magnetron sputtering and electrochemical etching is investigated by photoluminescence and Raman scattering methods. It is shown that oxidation of silicon crystallites takes place in both types of structures and results in appearance of additional emission bands. However the degree of oxidation in etched structures exceeds significantly this value for sputtered samples. It is found that the intensity and spectral position of the emission band caused by exciton recombination in Si crystallites do not change practically during aging in sputtered structures in contrast to etched ones. It is shown that the oxidation of silicon amorphous phase occur during aging in sputtered structures.
Semiconductors | 2010
E. F. Venger; S. I. Kirillova; N.E. Korsunska; T. Stara; L. Yu. Khomenkova; A. V. Sachenko; Y. Goldstein; E. Savir; J. Jedrzejewski
Layers grown by magnetron deposition of Si and SiO2 on a p-type silicon substrate and containing silicon nanocrystals in the oxide matrix have been studied by the method of temperature dependences of the capacitive photovoltage. The effect of the substrate orientation and natural oxidation preceding high-temperature annealing that results in the formation of Si nanocrystals in the SiO2 matrix on the layer-substrate interface characteristics is studied. The density of fast interface states trapping majority carriers was estimated. It is found that structural changes occur at the layer-substrate interface in the case of a (111) substrate and are caused by stresses appearing upon cooling. It was shown that natural oxidation of the deposited layer, preceding high-temperature annealing, causes an increase in the charge trapped in the oxide.