J. Kusterer

Diamond microwave micro relay

Abstract Based on the technology of the electrostatically actuated cantilever micro switch, entirely made of diamond on a Si-baseplate (except for the final top interconnect metal level) [reported previously] and based on the static and dynamic switching characteristics [reported previously], in coplanar arrangement was designed, fabricated and successfully operated. Due to the DC-coupling the new MEMS-relay allows switching of bias and signal simultaneously.

Evaluation of CVD diamond for heavy duty microwave switches

In this contribution, the use of CVD diamond as a multi-functional material for DC coupled microwave switches is discussed. CVD diamond is a new MEMS material with extraordinary properties, especially for heavy duty applications in extreme environments. An all-diamond cantilever based switch is described using two different actuation principles. First results for a coplanar waveguide configuration are presented.

Thermally Actuated Nanocrystalline Diamond Micro-Bridges for Microwave and High Power RF Applications

This paper presents a thermally actuated nanocrystalline diamond micro-bridge for RF and high power applications. The diamond bridges are integrated on a CPW transmission line and small signal measurements of the actuator working as a switch are presented. The bridges are actuated at 2 volts drawing a current of 30 mA. Tunable inductors with an inductance ratio of 2.2 at 30 GHz are also presented. High power measurements in the range of 24-47 dBm for the diamond actuator in a microstrip topology are presented.

High power nanocrystalline diamond RF MEMS- A combined look at mechanical and microwave properties

In this paper, a compressively stressed nanocrystalline diamond (NCD) actuator utilizing a thermal actuation scheme is presented. The growth chemistry of NCD films along with the mechanical properties of diamond are discussed in detail. Stress engineering is performed to realize compressively stressed diamond films for RF-MEMS applications. A NCD based bi-stable actuator is designed and fabricated on a low resistive silicon substrate. Tunable switches are implemented in CPW and microstrip topologies and small signal measurements are performed in the frequency range of 5-30 GHz. High power measurements are performed in the power spectrum of 24-47 dBm on the switches integrated in the microstrip topology.

Diamond for high power electronics

The current status and perspective of diamond as wide bandgap semiconductor in microwave power and high temperature electronics is reviewed. Predicted RF power densities above 50 W/mm and diode operation above 1000 /spl deg/C characterize this extraordinary material. In addition, the properties predistine diamond films also for RF MEMS. A bi-stable in-line switch is discussed.

Chapter 12 – Nanocrystalline Diamond for RF-MEMS Applications

This article presents thermally actuated nanocrystalline diamond bridges for microwave and high power RF applications. The growth process along with the seeding technique for generating the diamond films has been discussed. RF applications which include mechanical resonators and electrostatically actuated switches demonstrated by other researchers is presented. The diamond bridges are integrated in CPW and microstrip topologies to operate as a switch and tunable inductor. In addition to small signal measurements, high power measurements in the range of 24-47 dBm are performed for the switches integrated in the microstrip topology.