J. M. L. Figueiredo

A LiÉnard Oscillator Resonant Tunnelling Diode-Laser Diode Hybrid Integrated Circuit: Model and Experiment

We report on a hybrid optoelectronic integrated circuit based on a resonant tunnelling diode driving an optical communications laser diode. This circuit can act as a voltage controlled oscillator with optical and electrical outputs. We show that the oscillator operation can be described by Lienards equation, a second order nonlinear differential equation, which is a generalization of the Van der Pol equation. This treatment gives considerable insight into the potential of a monolithic version of the circuit for optical communication functions including clock recovery and chaotic source applications.

Excitability and optical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors

We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics.

Delayed Feedback Dynamics of Liénard-Type Resonant Tunneling-Photo-Detector Optoelectronic Oscillators

We use the nonlinear dynamics approach for studying delayed feedback optoelectronic oscillators (OEOs) formed by hybrid integration of resonant tunneling diode (RTD) photo-detectors with laser diodes, in both single and dual optical fiber feedback routes. In the single loop topology, the performance of the RTD-OEO free-running self-sustained oscillator is improved in terms of phase noise, with a compromise between the delay line and the strength of the optical re-injection. In the dual-loop configuration, superior performance is achieved due to the suppression of the side modes associated with the optical cavity length, resulting in a side mode suppression ratio of up to -60 dBc of the carrier frequency. We compare experimental results with numerical simulations based on a system of delay differential equations comprising a Liénard oscillator model driven by white Gaussian noise and coupled with laser rate equations. The delayed feedback Liénard oscillator model gives considerable insight into the RTD-OEO dynamical regimes predicting its main features in both single- and dual-loop configurations.

Optical Control of a Resonant Tunneling Diode Microwave-Photonic Oscillator

We report on optical injection-locking of a microwave-photonic oscillator based on the integration of a resonant tunneling diode optical waveguide photodetector with a communication laser diode. The oscillator locking was achieved with in-fiber optical powers as low as 0.2 mW, and locking ranges up to 23.8 MHz for in-fiber optical power of few milliwatts and with phase-noise suppression below -110 dBc/Hz at 10-kHz frequency offset from the center frequency. The circuits dynamics are well described as an optically controlled Liénard oscillator.

Nonlinear Dynamics of Resonant Tunneling Optoelectronic Circuits for Wireless/Optical Interfaces

We report on experimental and modeling results on the nonlinear dynamics of a resonant-tunneling-diode-based (RTD) optoelectronic circuits that can be used as the basis of a wireless/optical interface for wireless access networks. The RTD-based circuits are optoelectronic integrated circuits that have negative differential resistance and act as optoelectronic voltage-controlled oscillators. These circuits display many of the features of classic nonlinear dynamics, including chaos and synchronization. These highly nonlinear oscillators behaves as injection-locked oscillators that can be synchronized by a small injection signal of either wireless or optical origin, and thus, can transfer phase encoded information from wireless to the optical domain or the optical to the wireless domain.

Regenerative memory in time-delayed neuromorphic photonic resonators

We investigate a photonic regenerative memory based upon a neuromorphic oscillator with a delayed self-feedback (autaptic) connection. We disclose the existence of a unique temporal response characteristic of localized structures enabling an ideal support for bits in an optical buffer memory for storage and reshaping of data information. We link our experimental implementation, based upon a nanoscale nonlinear resonant tunneling diode driving a laser, to the paradigm of neuronal activity, the FitzHugh-Nagumo model with delayed feedback. This proof-of-concept photonic regenerative memory might constitute a building block for a new class of neuron-inspired photonic memories that can handle high bit-rate optical signals.

Electric field switching in a resonant tunneling diode electroabsorption modulator

The basic mechanism underlying electric field switching produced by a resonant tunneling diode (RTD) is analyzed and the theory compared with experimental results; agreement to within 12% is achieved. The electroabsorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz-Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28-dB optical modulation in a 200-/spl mu/m active length device. The advantage of the RTD-EAM over the conventional reverse-biased p-n junction EAM, is that the RTD-EAM has, in essence, an integrated electronic amplifier and, therefore, requires considerably less switching power.

Modeling of a resonant tunneling diode optical modulator

The integration of a double barrier resonant tunneling diode within a unipolar optical waveguide provides electrical gain over a wide bandwidth. Due to the nonlinearities introduced by the double barrier resonant tunneling diode an unipolar InGaAlAs/InP optical waveguide can be employed both as optical modulator and optical detector. The modeling results of a device operating as optical modulator agree with preliminary experimental data, foreseeing for an optimized device modulation depths up to 23 dB with chirp parameter between -1 and 0 in the wavelength range analyzed (1520 nm - 1600 nm).

Optical modulation at around 1550 nm in an InGaAlAs optical waveguide containing an InGaAs/AlAs resonant tunneling diode

We report electroabsorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing an InGaAs/AlAs double-barrier resonant tunneling diode (RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band edge to longer wavelengths via the Franz–Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterization of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance region, the RTD optical waveguide behaves as an electroabsorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators.

Photo-Detectors Integrated with Resonant Tunneling Diodes

We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR) region. The resonant tunneling diode photo-detector (RTD-PD) can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTDs NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz) modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.