J. Massies

Temperature quenching of photoluminescence intensities in undoped and doped GaN

This work discusses the temperature behavior of the various photoluminescence (PL) transitions observed in undoped, n- and p-doped GaN in the 9–300 K range. Samples grown using different techniques have been assessed. When possible, simple rate equations are used to describe the quenching of the transitions observed, in order to get a better insight on the mechanism involved. In undoped GaN, the temperature dependence of band edge excitonic lines is well described by assuming that the A exciton population is the leading term in the 50–300 K range. The activation energy for free exciton luminescence quenching is of the order of the A rydberg, suggesting that free hole release leads to nonradiative recombination. In slightly p-doped samples, the luminescence is dominated by acceptor related transitions, whose intensity is shown to be governed by free hole release. For high Mg doping, the luminescence at room temperature is dominated by blue PL in the 2.8–2.9 eV range, whose quenching activation energy is in...

From visible to white light emission by GaN quantum dots on Si(111) substrate

GaN quantum dots (QDs) in an AlN matrix have been grown on Si(111) by molecular-beam epitaxy. The growth of GaN deposited at 800 °C on AlN has been investigated in situ by reflection high-energy electron diffraction. It is found that a growth interruption performed at GaN thicknesses larger than three molecular monolayers (8 A) instantaneously leads to the formation of three-dimensional islands. This is used to grow GaN/AlN QDs on Si(111). Depending on their sizes, intense room-temperature photoluminescence is observed from blue to orange. Finally, we demonstrate that stacking of QD planes with properly chosen dot sizes gives rise to white light emission.

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only fitting parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.

Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

AlGaN/GaN quantum well (QW) structures are grown on c-plane sapphire substrates by molecular beam epitaxy. Control at the monolayer scale of the well thickness is achieved and sharp QW interfaces are demonstrated by the low photoluminescence linewidth. The QW transition energy as a function of the well width evidences a quantum-confined Stark effect due to the presence of a strong built-in electric field. Its origin is discussed in terms of piezoelectricity and spontaneous polarization. Its magnitude versus the Al mole fraction is determined. The role of the sample structure geometry on the electric field is exemplified by changing the thickness of the AlGaN barriers in multiple-QW structures. Straightforward electrostatic arguments well account for the overall trends of the electric-field variations.

Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

GaN layers were grown by gas‐source molecular beam epitaxy on sapphire substrates using ammonia as a nitrogen source. The nitridation of an Al2O3 surface prior to the GaN growth was followed in situ by reflection high‐energy electron diffraction. A strong variation of the surface lattice parameter was observed corresponding to the formation of an AlN relaxed layer. The nucleation of GaN on such a nitridated surface is facilitated, as checked by atomic force microscopy. Optimization of the nitridation procedure is achieved by investigating the photoluminescence properties of GaN thin films grown for different nitridation times. It is found that the band‐edge and the yellow‐band luminescences are strongly dependent on the nitridated starting surface. Finally, the optimized nitridation process is used to grow high‐quality GaN epitaxial layers.

Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE

Abstract In this paper, we report results dealing with the effects of stoichiometry on surface properties of GaAs(001) layers grown by MBE. Three aspects of surface properties were investigated: crystallography, electronic properties and chemical reactivity. Surface crystallography was studied mainly by LEED. The reconstruction of the surface was found to be drastically dependent on the composition of the uppermost atomic layer, i.e. the surface stoichiometry. According to the arsenic surface coverage, many structures from the c(8 × 2) Ga rich to the (1 × 1) arsenic saturated surface have been observed. The influence of stoichiometry on surface electronic properties has been studied by electron loss spectroscopy (ELS) and contact potential difference (CPD) measurements. In the electron loss spectra, two peaks, at about 10.3 and 20.2 eV are very sensitive to the surface composition: they gradually disappear when the arsenic coverage increases, and consequently are associated with surface states on gallium atoms. On the other hand, the CPD measurements have shown that the variation of the work function with the arsenic surface coverage is not monotonic: in particular, an abrupt change of work function of about 300 meV occurs between the (1 × 6) and c(2 × 8) structures which are very similar as far as the arsenic surface coverage (about 0,5 and 0,6 respectively) is concerned. Therefore, it seems that the work function is strongly dependent on the atomic reconstruction occurring at the surface, and not only on its stoichiometry. The connection between stoichiometry and chemical reactivity of the surface is illustrated by the study of H2S adsorption: a large difference (factor of 103) in sticking coefficient has been found between surfaces with different arsenic coverages.

Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during the growth of nitrides on silicon substrates: first, no nitridation of the silicon substrate is observed at the interface between the AIN buffer laver and the silicon surface: second. there is no Si autodoping coming from the substrate and resistive undoped GaN layers are obtained; and, also, strain balance engineering allows one to grow thick GaN epilayers (up to 3 mum) without formation of cracks. The optical, structural and electrical properties of these films are studied. In order to evaluate the potentialities of III-V nitrides grown on silicon substrates, we have grown heterostructures to realize light emitting diodes (LEDs), photodetectors and high electron mobility transistors (HEMTs).

Substrate chemical etching prior to molecular‐beam epitaxy: An x‐ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4‐H2O2‐H2O solution

X‐ray photoelectron spectroscopy has been performed in order to investigate the effects of the chemical etching of GaAs {001} surfaces by the H2SO4/H2O2/H2O solution used following the procedure currently practiced in the molecular‐beam‐epitaxy technique. It is demonstrated that, in contrast to what is generally believed, rinsing in running deionized water after etching does not produce any passivating oxide film on the surface. The surface‐oxidized phases are only due to the sample manipulation in air after etching. This oxidation process is enhanced by the sample heating for indium soldering on the sample holder. It is shown that the surface‐oxidized phases can be avoided by handling the sample under an inert atmosphere. Results of thermal desorption of the surface‐oxidized phases are also given.

High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

We report on the growth of high-electron-mobility AlGaN/GaN heterostructures on silicon (111) substrates by molecular-beam epitaxy using ammonia as the nitrogen source. Crack-free GaN layers up to 3 μm are obtained. Their optical properties are similar to those commonly obtained for films grown on sapphire, but photoluminescence spectra indicate that GaN on Si(111) is in a tensile strain state which increases with the epitaxial layer thickness. Such uncracked GaN buffer layers grown on Si(111) have been used to achieve undoped AlGaN/GaN heterostructures having electron mobilities exceeding 1600 cm2/V s at room temperature and 7500 cm2/V s at 20 K.

Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

We show that optical reflectivity measurements can be used to evaluate the part of a NH, flux which reacts with a Ga-terminated GaN surface or with a Ga-flux simultaneously impinging on the surface, as in standard molecular beam epitaxy situation. At least for temperatures not exceeding 700 degrees C, the ratio of the reacted part of the NH3 flux to the incident flux can be assimilated to the NH:, cracking efficiency. Being nearly zero below a threshold temperature of 450 degrees C, it increases with temperature but remains low (similar to 4%) explaining why an exceptionally high V/III flux ratio is necessary to grow GaN using NH3