J.-N. Beaudry

Organometallic vapor phase epitaxy of GaAs1−xNx alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation

Epitaxial GaAs1−xNx alloy layers, nominally 200-nm-thick, with x up to 0.0375 were grown on GaAs(001) at temperatures Ts varying from 500 to 650 °C to investigate nitrogen incorporation and lattice parameter variations during organometallic vapor phase epitaxy from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine. Quantitative secondary ion mass spectrometry measurements (SIMS) indicate that N incorporation decreases systematically with increasing Ts to become almost negligible at 650 °C. All films are coherent with the substrate as judged by high-resolution x-ray reciprocal lattice mapping although atomic force microscopy and cross-sectional transmission electron microscopy reveal the presence of cracks in films with x>0.02. High-resolution x-ray diffraction measurements combined with SIMS analyses indicate that the lattice constant decreases linearly with increasing x following closely the predictions of Vegard’s rule for x<0.03. At higher concentrations, the lattice constant decreases m...

Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation

The contribution of the fundamental gap

Experimental and theoretical studies of theE+optical transition inGaAsNalloys

{\text{E}}_{\ensuremath{-}}

Experimental investigation of the variation of the absorption coefficient with nitrogen content in GaAsN and GaInAsN grown on GaAs (001)

as well as those of the

Low-temperature emission in dilute GaAsN alloys grown by metalorganic vapor phase epitaxy

{\text{E}}_{\ensuremath{-}}+{\ensuremath{\Delta}}_{\text{so}}

Characterization of GaAs1−xNx epitaxial layers by ion beam analysis

and

Electronic and optical properties of GaAsN/GaAs quantum wells: A tight-binding study

{\text{E}}_{+}

Evidence for large configuration-induced band-gap fluctuations in GaAs1-xNx alloys

transitions to the dielectric function of

GaAs1-xNx on GaAs(001) : Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy

{\text{GaAs}}_{1\ensuremath{-}x}{\text{N}}_{x}(001)

Experimental and theoretical studies of the E+ optical transition in GaAsN alloys

alloys were determined from variable-angle spectroscopic ellipsometry and modulated photoreflectance spectroscopy analyses. The oscillator strength of the