J.P. David

Radiation-induced dark current in CMOS active pixel sensors

Degradation behavior of CMOS active pixel sensors exposed to protons and cobalt 60 is presented. The most sensitive parameter is the dark current: the mean value of the degradation is always dominated by ionizing effects.

Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices

A new method for accelerated prediction of the long-term thermal annealing of bulk oxide trapped charge in the low dose rate space environment was presented in a previous paper. This method, based on the thermal detrapping characteristics is briefly reviewed. From a single experimental isochronal curve, the long term isothermal behavior of the device is predicted and compared with an experimental isothermal curve. Four different devices, obtained from four different manufacturers, were examined to demonstrate the validity of this method. In all four cases, the predicted long-term thermal behavior is in good agreement with experimental results. This methods application is discussed for space missions.

Effect of switching from high to low dose rate on linear bipolar technology radiation response

The degradation of discrete and integrated-circuit bipolar technologies irradiated at High Dose Rate (HDR) and then switched to Low Dose Rates (LDR) is studied. It is shown that the degradation rate of switched devices is equal to that found at low dose rates for all the tested devices.

Total dose effects on gate controlled lateral PNP bipolar junction transistors

A gate controlled lateral PNP bipolar device has been designed in a commercial BiCMOS process to investigate its sensitivity to radiation-induced degradation. New experimental and simulated results concerning total dose effects are presented. The improved radiation hardness of this device working in its accumulation mode is shown. The influence of the gate potential during irradiation is studied as well as the effect of the gate potential on the degraded current characteristics.

Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits

An accelerated irradiation technique is used to study dose-ASET synergy effects. The impact of TID on SET is found to be identical when the dose rate is switched from high to low or from low to high.

Memories Response to MBU and Semi-Empirical Approach for SEE Rate Calculation

This paper deals with SEE rate prediction and proposes a semi-empirical approach that makes no use of the RPP concept. The investigation is based on a reduced set of ground data and SEU/MBU results are compared with in-flight data obtained on memories on-board ICARE (SAC-C orbit). Two-dimensional mixed-mode simulations complete this study and provide first insight to understand the observed behavior

Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator

The impact of the bias condition during irradiation on the total-dose response of a bipolar voltage comparator is investigated. Experimental results obtained with input pins biased asymmetrically during irradiation exhibit completely different total-dose response compared to irradiation with all pins grounded. Circuit analysis shows that asymmetrical biasing of the input stage creates a mismatch of the gain degradation in the transistors constituting the differential pair

Heavy ions induced latent stuck bits revealed by total dose irradiation in 4T cells SRAMs

Many stuck bits have been observed in 4T cells SRAMs exposed to heavy ions and total dose irradiations. This phenomenon, attributed to local dose deposition, is modeled accounting charge generation, recombination, transport and trapping in view of being better understood.

Annealing of Proton-Induced Random Telegraph Signal in CCDs

A silicon CCD imager has been irradiated with 10 MeV protons and measurements focused on random telegraph signal (RTS). A variance detection method is applied for quantifying the number of RTS after irradiation and through isochronal annealing. The observed behavior is analyzed and corresponds to the annealing of phosphorus-vacancies.

Measurements of Random Telegraph Signal in CCDs Irradiated With Protons and Neutrons

CCD imagers have been irradiated with 10 to 100 MeV protons, 45 MeV neutrons and measurements focussed on random telegraph signal (RTS) characterization. The objective is to propose a method for RTS detection and to analyse pixels behaviour with temperature, particle species and energy.