J.P. Gaspard

Electronic structure of Ag adsorbed on Si(111); experiment and theory

Abstract Experimental results (low energy electron loss spectroscopy) and band structure calculations relating to the early stages of Ag growth on a Si(111) surface are presented. Crystallography and thermal desorption kinetics studies of this interface, previously published, gave rise to the following conclusions. At room temperature and below 200°C, two-dimensional (2D) (111) epitaxial layers develop on top of a first ordered layer (√3 × √3), while at higher temperatures three-dimensional (3D) clusters develop over this first layer. Low energy electron loss experiments were performed at various surface coverages θ. They display different evolutions according to the growth modes. For the 2D epitaxial growth, one observes the disappearance of the peaks characteristic of a Si surface and the onset of Ag induced peaks located at 7.1 and 4.6 eV at completion of the √3 layer. These peaks narrow and shift to the bulk Ag excitation energies at 7.5 and 4 eV when a second Ag layer is deposited. In order to explain these results, we present a theoretical calculation of the electronic density of states of the interface using a tight binding approximation. This calculation accounts for the development of the Ag d band from the √3 coverage range to the (111) epitaxial Ag planes. The evolution of the spectra when θ is increased is discussed in view of these results.

Electronic structure of the SiAu surface

Abstract The electronic density of states of the SiAu surface is calculated using a continued fraction technique. The geometric structure of the surface alloy Au 4 Si is generated by molecular dynamics. The local density of states on Si atoms in a metallic environment differs qualitatively from the sp spectrum of a typical semiconductor. The calculated densities of p states of Si are in good agreement with recent X-ray spectra of Si in a metallic environment.

Electronic structure of the Si-Au surface

Abstract The electronic density of states of the Si-Au surface is calculated using a continued fraction technique. The geometric structure of the surface alloy Au 4 Si is generated by molecular dynamics. The local density of states on Si atoms in a metallic environment differs qualitatively from the sp spectrum of a typical semiconductor. The calculated densities of p states of Si are in good agreement with recent X-ray spectra of Si in a metallic environment.