J. P. He

Colossal electroresistance effect at metal electrode/La1−xSr1+xMnO4 interfaces

We have studied the current-voltage (I-V) characteristics and resistance switching at the interface between metal electrodes M (=Pt, Au, Ag, Al, Ti, and Mg) and atomically flat cleaved (001) surfaces of La1−xSr1+xMnO4 (x=0–1.0) single crystals by using a three-probe method. Hysteretic I-V characteristics, indicating the appearance of the resistance switching, were observed in the junctions for M=Mg, Al, and Ti, which have relatively shallow work functions. The resistance switching ratio depends on the hole doping x and the optimal doping level is around x=0.5, verifying that the resistance switching property can be controlled by the doping level.

Impact of Ru doping in bilayered manganese oxide La1.2Sr1.8Mn2O7

The Ru doping effect on the bilayered manganese oxide La1.2Sr1.8(Mn1−yRuy)2O7 has been investigated in the range of 0⩽y⩽0.2. The ferromagnetic transition temperature (TC) increases, while the saturated magnetization decreases, with Ru doping. These indicate that in addition to the doping-induced suppression of charge-orbital correlation, the antiferromagnetic coupling between the Ru and the Mn moments is relevant to the enhancement of TC. The axis of easy magnetization changes from within the in plane to along the c axis with Ru doping, owing to the strong magnetic anisotropy of Ru spins.

Impurity-induced transition to a Mott insulator in Sr3Ru2O7

The electrical, magnetic, and structural properties of Sr

Bandwidth-disorder phase diagram of half-doped layered manganites

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Variation of charge/orbital ordering in layered manganite Pr 1 − x Ca 1 + x Mn O 4 investigated by transmission electron microscopy

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In-Plane Anisotropy of the Electronic Structure for the Charge- and Orbital-Ordered State in Half-Doped Manganite with Layered Structure

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Eu 0.5 Sr 1.5 Mn O 4 : A three-dimensional X Y spin glass

Mn

Magnetoelectric emission in a magnetic ferroelectric Er-doped (Ba,Sr)TiO3

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Direct observation of the bandwidth-disorder induced variation of charge/orbital ordering structure in Re0.5 (Ca1- ySry)1.5MnO4

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Logarithmic growth law in the two-dimensional Ising spin glass state resulting from the electron doping in single-layered manganites

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